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Wei Jiang
Wei Jiang
Department of Electronic and Computer Engneering, The Hong Kong University of Science and Technology
Verified email at connect.ust.hk
Title
Cited by
Cited by
Year
Spontaneous degradation of flexible poly-Si TFTs subject to dynamic bending stress
W Jiang, M Wang, H Wang, D Zhang
IEEE Transactions on Electron Devices 66 (5), 2214-2218, 2019
192019
Mechanical reliability of flexible a-InGaZnO TFTs under dynamic stretch stress
X Wang, M Wang, W Jiang, D Zhang, H Wang, Q Shan
IEEE Transactions on Electron Devices 65 (7), 2863-2869, 2018
152018
A Kinetic Model for the Generation and Annihilation of Thermally Induced Carrier Donors in a Semiconducting Metal‐Oxide Thin Film
Y Wang, W Jiang, X Xie, Z Xia, M Wong
Small 18 (41), 2203346, 2022
122022
Origin of spontaneous degradation of flexible poly-Si TFTs after dynamic bending
W Jiang, B Li, X Li, M Wang, H Wang, D Zhang
IEEE Electron Device Letters 41 (8), 1205-1208, 2020
82020
Degradation of flexible LTPS TFTs under repetitive bending stress
W Jiang, Q Shan, H Wang, D Zhang, M Wang
2018 9th Inthernational Conference on Computer Aided Design for Thin-Film …, 2018
52018
P‐3: Conductive Indium‐Tin‐Zinc Oxide Formed Using an Oxygen Plasma Treatment Through a Silicon Oxide Cover Layer
X Xie, K Chen, Z Zhou, W Jiang, Y Wang, S Wang, Z Xia, M Wong
SID Symposium Digest of Technical Papers 54 (1), 1786-1789, 2023
22023
Reliability of Flexible LTPS TFTs under Dynamic Mechanical Stress
B Li, X Yin, W Jiang, M Wang, D Zhang, H Wang
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit …, 2020
12020
Comparator with Non-Uniform Parameter Compensation using Dual-Gate Thin-Film Transistors
X Liu, R Shi, W Jiang, X Xie, M Wong
IEEE Electron Device Letters, 2024
2024
Dependence of the Electrical Behavior of an Indium-Gallium-Zinc Oxide Thin-Film Transistor on the Process Condition of Plasma-Based Fluorination
W Jiang, Z Xia, M Wong
IEEE Transactions on Electron Devices, 2023
2023
P‐1.3: Application of a Kinetic Model to the Characterization of Donor‐Defects in a Fluorinated Metal‐Oxide Semiconductor
Y Wang, W Jiang, Z Xia, M Wong
SID Symposium Digest of Technical Papers 54, 445-447, 2023
2023
P‐1.5: The effects of the temperature of fluorination treatment on the reliability of an indium‐gallium‐zinc oxide thin‐film transistor
W Jiang, Y Wang, S Wang, Z Xia, M Wong
SID Symposium Digest of Technical Papers 54, 451-453, 2023
2023
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