Epitaxial graphene on SiC {0001}: advances and perspectives W Norimatsu, M Kusunoki Physical Chemistry Chemical Physics 16 (8), 3501-3511, 2014 | 242 | 2014 |
Development of novel thermoelectric materials by reduction of lattice thermal conductivity C Wan, Y Wang, N Wang, W Norimatsu, M Kusunoki, K Koumoto Science and Technology of Advanced Materials, 2010 | 180 | 2010 |
Enhanced thermoelectric performance of Nb-doped SrTiO3 by nano-inclusion with low thermal conductivity N Wang, H Chen, H He, W Norimatsu, M Kusunoki, K Koumoto Scientific reports 3 (1), 1-5, 2013 | 174 | 2013 |
Formation process of graphene on SiC (0 0 0 1) W Norimatsu, M Kusunoki Physica E: Low-dimensional Systems and Nanostructures 42 (4), 691-694, 2010 | 171 | 2010 |
Transitional structures of the interface between graphene and 6H–SiC (0 0 0 1) W Norimatsu, M Kusunoki Chemical Physics Letters 468 (1-3), 52-56, 2009 | 153 | 2009 |
Selective formation of ABC-stacked graphene layers on SiC (0001) W Norimatsu, M Kusunoki Physical review B 81 (16), 161410, 2010 | 135 | 2010 |
Intercalation: building a natural superlattice for better thermoelectric performance in layered chalcogenides C Wan, Y Wang, N Wang, W Norimatsu, M Kusunoki, K Koumoto Journal of electronic materials 40, 1271-1280, 2011 | 108 | 2011 |
Nanoscale stacking faults induced low thermal conductivity in thermoelectric layered metal sulfides C Wan, Y Wang, W Norimatsu, M Kusunoki, K Koumoto Applied Physics Letters 100 (10), 2012 | 73 | 2012 |
Formation mechanism of graphene layers on SiC (000 1) in a high-pressure argon atmosphere W Norimatsu, J Takada, M Kusunoki Physical Review B 84 (3), 035424, 2011 | 65 | 2011 |
Nitrate-ion-selective exchange ability of layered double hydroxide consisting of MgII and FeIII R Sasai, W Norimatsu, Y Matsumoto Journal of Hazardous Materials 215, 311-314, 2012 | 55 | 2012 |
Growth of graphene from SiC {0001} surfaces and its mechanisms W Norimatsu, M Kusunoki Semiconductor Science and Technology 29 (6), 064009, 2014 | 51 | 2014 |
Structural features of epitaxial graphene on SiC {0 0 0 1} surfaces W Norimatsu, M Kusunoki Journal of Physics D: Applied Physics 47 (9), 094017, 2014 | 47 | 2014 |
Sequential control of step-bunching during graphene growth on SiC (0001) J Bao, O Yasui, W Norimatsu, K Matsuda, M Kusunoki Applied Physics Letters 109 (8), 2016 | 43 | 2016 |
Synthesis of freestanding graphene on SiC by a rapid-cooling technique J Bao, W Norimatsu, H Iwata, K Matsuda, T Ito, M Kusunoki Physical review letters 117 (20), 205501, 2016 | 42 | 2016 |
Selective fabrication of free-standing ABA and ABC trilayer graphene with/without Dirac-cone energy bands K Sugawara, N Yamamura, K Matsuda, W Norimatsu, M Kusunoki, T Sato, ... NPG Asia Materials 10 (2), e466-e466, 2018 | 41 | 2018 |
Effects of alkaline earth doping on the thermoelectric properties of misfit layer sulfides YE Putri, C Wan, Y Wang, W Norimatsu, M Kusunoki, K Koumoto Scripta Materialia 66 (11), 895-898, 2012 | 38 | 2012 |
Epitaxial growth of boron-doped graphene by thermal decomposition of B4C W Norimatsu, K Hirata, Y Yamamoto, S Arai, M Kusunoki Journal of Physics: Condensed Matter 24 (31), 314207, 2012 | 34 | 2012 |
Growth and features of epitaxial graphene on SiC M Kusunoki, W Norimatsu, J Bao, K Morita, U Starke Journal of the Physical Society of Japan 84 (12), 121014, 2015 | 32 | 2015 |
Atom-by-atom simulations of graphene growth by decomposition of SiC (0001): impact of the substrate steps M Morita, W Norimatsu, HJ Qian, S Irle, M Kusunoki Applied Physics Letters 103 (14), 2013 | 29 | 2013 |
Formation of a nitride interface in epitaxial graphene on SiC (0001) Y Masuda, W Norimatsu, M Kusunoki Physical Review B 91 (7), 075421, 2015 | 26 | 2015 |