| MOS-controlled thyristor: A study of a promising power-switching device EV Chernyavskii, VP Popov, YS Pakhmutov, LN Safronov Russian Microelectronics 31, 318-322, 2002 | 7 | 2002 |
| Carrier lifetime and turn-off current control by electron irradiation of MCT EV Chernyavsky, VP Popov, YI Krasnikov, LN Safronov Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002 | 7 | 2002 |
| Current-voltage characteristics of Si: As blocked impurity band photodetectors with hopping conductivity (BIB-II) DG Esaev, SP Sinitsa, EV Chernyavskii Semiconductors 33, 915-919, 1999 | 7 | 1999 |
| Dynamic and static characteristics of MOS thyristors irradiated with electrons EV Chernyavsky, VP Popov, YS Pakhmutov, YS Krasnikov, LN Safronov Chem. Sustain. Develop. 9, 65-69, 2001 | 5 | 2001 |
| Current-voltage characteristics of Si: As-based photodetectors with blocked hopping conductivity DG Esaev, SP Sinitsa, EV Chernyavskii Semiconductors 33, 574-577, 1999 | 3 | 1999 |
| Trench-Gate MOS-Controlled Thyristor: An Evaluation EV Chernyavskii, VP Popov, YS Pakhmutov, LN Safronov Russian Microelectronics 31 (5), 323-325, 2002 | 1 | 2002 |
| Junction termination extension (JTE) with variation lateral doping (VLD) optimization method. E Chernyavskiy https://arxiv.org/ftp/arxiv/papers/1611/1611.10352.pdf, 2016 | | 2016 |
| Geiger Mode Avalanche Photodiode (G-APD) with avalanche self-quenching behavior. E Chernyavskiy Proceedings International Terahertz Conference 2011, pp. 75-81, 2011 | | 2011 |
| Quasi 3D simulation of Super Junction IGBT, 1200V class. E Chernyavskiy https://www.researchgate.net/publication …, 2009 | | 2009 |
| Method for the Microwave Measurement of Carrier Lifetime in Lightly Doped Silicon Ingots PA Borodovskii, AF Buldygin, AS Tokarev, EV Chernyavskii Russian Microelectronics 34, 316-324, 2005 | | 2005 |
| Modeling, Fabrication and Test Results of a MOS Controlled Thyristor—MCT‐with high controllable current density E Chernyavskiy, V Popov, B Vermeire AIP Conference Proceedings 772 (1), 1507-1508, 2005 | | 2005 |
| Switching characteristics of electron-irradiated MOS-controlled thyristors EV Chernyavskii, VP Popov, YS Pakhmutov, YI Krasnikov, LN Safronov Semiconductors 35, 1106-1109, 2001 | | 2001 |
| PHYSICS OF SEMICONDUCTOR DEVICES MOSC Thyristors, EV Chernyavskiï, VP Popov, YS Pakhmutov, ... Semiconductors 35 (9), 1106-1109, 2001 | | 2001 |
| AMORPHOUS, GLASSY, AND POROUS SEMICONDUCTORS-Current-voltage characteristics of Si: As blocked impurity band photodetectors with hopping conductivity (BIB-11) DG Esaev, SP Sinitsa, EV Chernyavskii Semiconductors 33 (8), 915-919, 1999 | | 1999 |
| A Project of Bipolar Field-Effect Transistor (IGBT) 50 A 1800 V Manufactured on the Plates of High-Resistance Crucible-Free Silicon with the Orientation (100) EV CHERNYAVSKY, VP POPOV, YS PAKHMUTOV, YN MIRGORODSKY, ... | | |
| 10 kV diode Junction Termination Edge, Simulation Study. E Chernyavskiy | | |
| Simulation study: Trench gate IGBT with carrier storage (CS) layer. E Chernyavskiy http://semiweb.byethost32.com/Trench_Gate_Carrier_Storage.pdf, 0 | | |
| Deep Trench with field plate (DT FP) MOSFET die edge termination. E Chernyavskiy http://semiweb.byethost32.com/3D_Simulation_Termination_Deep_Trench_MOSFET.pdf, 0 | | |
