| Characterization of low-temperature processed single-crystalline silicon thin-film transistor on glass X Shi, K Henttinen, T Suni, I Suni, SS Lau, M Wong IEEE Electron Device Letters 24 (9), 574-576, 2003 | 243 | 2003 |
| Analytical solutions to the one-dimensional oxide-silicon-oxide system X Shi, M Wong IEEE Transactions on Electron Devices 50 (8), 1793-1800, 2003 | 59 | 2003 |
| Analytical IV relationship incorporating field-dependent mobility for a symmetrical DG MOSFET with an undoped body M Wong, X Shi IEEE Transactions on Electron Devices 53 (6), 1389-1397, 2006 | 33 | 2006 |
| Effects of substrate doping on the linearly extrapolated threshold voltage of symmetrical DG MOS devices X Shi, M Wong IEEE transactions on electron devices 52 (7), 1616-1621, 2005 | 26 | 2005 |
| In vitro investigation of hemocompatibility of hydrophilic SiNx: H films fabricated by plasma-enhanced chemical vapor deposition GJ Wan, P Yang, XJ Shi, M Wong, HF Zhou, N Huang, PK Chu Surface and Coatings Technology 200 (5-6), 1945-1949, 2005 | 24 | 2005 |
| On the threshold voltage of symmetrical DG MOS capacitor with intrinsic silicon body M Wong, X Shi IEEE transactions on electron devices 51 (10), 1600-1604, 2004 | 24 | 2004 |
| A comprehensive analytical on-current model for polycrystalline silicon thin film transistors based on effective channel mobility H Hao, M Wang, B Zhang, X Shi, M Wong Journal of Applied physics 103 (9), 2008 | 23 | 2008 |
| Formation of silicon-on-diamond by direct bonding of plasma-synthesized diamond-like carbon to silicon M Zhu, PK Chu, X Shi, M Wong, W Liu, C Lin Applied physics letters 85 (13), 2532-2534, 2004 | 20 | 2004 |
| Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefrom M Wong, HS Kwok, Z Meng, D Zhang, X Shi US Patent 8,088,676, 2012 | 19 | 2012 |
| On the threshold voltage of metal–oxide–semiconductor field-effect transistors X Shi, M Wong Solid-state electronics 49 (7), 1179-1184, 2005 | 16 | 2005 |
| Effective channel mobility of poly-silicon thin film transistors M Wang, M Wong, X Shi, D Zhang 2006 8th International Conference on Solid-State and Integrated Circuit …, 2006 | 11 | 2006 |
| 35.4: A 2.1‐inch AMOLED Display Based on Metal‐Induced Laterally Crystallized Polycrystalline Silicon Technology C Wu, Z Meng, J Li, X Zhang, G Yang, S Xiong, X Shi, H Peng, M Wong, ... SID Symposium Digest of Technical Papers 35 (1), 1128-1131, 2004 | 11 | 2004 |
| Formation of silicon on plasma synthesized SiOxNy and reaction mechanism M Zhu, X Shi, P Chen, W Liu, M Wong, C Lin, PK Chu Applied surface science 243 (1-4), 89-95, 2005 | 7 | 2005 |
| Optimization of short channel effect and external resistance on small size FinFET for different threshold voltage flavors and supply voltages C Han, X Shi, Q Huang Microelectronics Journal 85, 1-5, 2019 | 5 | 2019 |
| A Comparison of Device Architecture, Electrical Performance and Process Flow between FinFET and Planar MOSFETs JH Ju, XJ Shi, SF Yu ECS Transactions 60 (1), 745, 2014 | 4 | 2014 |
| A Novel 500-700V Ultra High-Voltage LDMOS with Low On-State Resistance by Multiple Local RESURF Enhancement Technology M Li, DY Chen, DS Jung, XJ Shi 2019 China Semiconductor Technology International Conference (CSTIC), 1-3, 2019 | 3 | 2019 |
| On the Body-Thickness Dependence of the Linearly Extrapolated Threshold Voltage of a Double-Gate Metal–Oxide–Semiconductor Field-Effect Device M Wong, X Shi, T Chow Japanese journal of applied physics 45 (12R), 9069, 2006 | 3 | 2006 |
| Characteristics of transistors fabricated on silicon-on-quartz prepared using a mechanically initiated exfoliation technique X Shi, K Henttinen, T Suni, I Suni, M Wong IEEE electron device letters 26 (9), 607-609, 2005 | 3 | 2005 |
| Characterization and analysis of diode-string ESD protection in 28nm CMOS by VFTLP C Li, C Wang, Q Chen, F Zhang, F Lu, X Shi, Y Yang, H Li, G Chen, T Li, ... 2017 IEEE 24th International Symposium on the Physical and Failure Analysis …, 2017 | 2 | 2017 |
| Characteristics and stability of improved re‐crystallized metal‐induced laterally crystallized polycrystalline‐silicon thin‐film transistors for display applications M Wong, Z Meng, X Shi Journal of the Society for Information Display 11 (4), 633-637, 2003 | 2 | 2003 |
