Anbarasu Manivannan

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Nishant SaxenaUniversity of Muenster, GermanyVerified email at uni-muenster.de
Sundarrajan AsokanProfessor, Department of Instrumentation and Applied Physics, Indian Institute of ScienceVerified email at iisc.ac.in
Dr.Palani I AProfessor, Department of Mechanical Engineering, Indian Institute of technology IndoreVerified email at iiti.ac.in
Matthias WuttigProfessor für Physik, RWTH AachenVerified email at physik.rwth-aachen.de
Smriti SahuFaculty, Sonoran Desert InstituteVerified email at sdi.edu
Dr. Shivendra Kumar PandeyNational Institute of Technology Silchar, IndiaVerified email at ei.nits.ac.in
Mani Prabu S SAssistant ProfessorVerified email at ssn.edu.in
Akash KumarAssistant Research Scientist, Arizona State UniversityVerified email at asu.edu
Madhu H CSiddaganga Institute of TechnologyVerified email at sit.ac.in
Satish Vasu KailasIndian Institute of Science, Bangalore, IndiaVerified email at iisc.ac.in

Anbarasu Manivannan

Professor, Department of Electrical Engineering, Indian Institute of Technology Madras

Verified email at ee.iitm.ac.in

Phase change memory Ovonic selector phase change synaptic devices in-memory computing phase change photonic memory


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Nanosecond threshold switching of GeTe6 cells and their potential as selector devices M Anbarasu, M Wimmer, G Bruns, M Salinga, M Wuttig Applied Physics Letters 100 (14), 2012	144	2012
Structural study on amorphous and crystalline state of phase change material M Upadhyay, S Murugavel, M Anbarasu, TR Ravindran Journal of Applied Physics 110 (8), 2011	67	2011
Microstructure, mechanical properties and shape memory behaviour of friction stir welded nitinol SSM Prabu, HC Madhu, CS Perugu, K Akash, PA Kumar, SV Kailas, ... Materials Science and Engineering: A 693, 233-236, 2017	52	2017
Redefining the speed limit of phase change memory revealed by time-resolved steep threshold-switching dynamics of AgInSbTe devices KD Shukla, N Saxena, S Durai, A Manivannan Scientific Reports 6 (1), 37868, 2016	40	2016
Exploring ultrafast threshold switching in In₃SbTe₂ phase change memory devices N Saxena, C Persch, M Wuttig, A Manivannan Scientific reports 9 (1), 19251, 2019	36	2019
Shape memory effect, temperature distribution and mechanical properties of friction stir welded nitinol SSM Prabu, HC Madhu, CS Perugu, K Akash, R Mithun, PA Kumar, ... Journal of Alloys and Compounds 776, 334-345, 2019	34	2019
Low power ovonic threshold switching characteristics of thin GeTe6 films using conductive atomic force microscopy A Manivannan, SK Myana, K Miriyala, S Sahu, R Ramadurai Applied Physics Letters 105 (24), 2014	30	2014
Influence of fluence, beam overlap and aging on the wettability of pulsed Nd3+: YAG nanosecond laser-textured Cu and Al sheets YEB Vidhya, A Pattamatta, A Manivannan, NJ Vasa Applied Surface Science 548, 149259, 2021	28	2021
The influence of network rigidity on the electrical switching behaviour of Ge–Te–Si glasses suitable for phase change memory applications M Anbarasu, S Asokan Journal of Physics D: Applied Physics 40 (23), 7515, 2007	28	2007
Electrical switching behavior of bulk As–Te–Si glasses: composition dependence and topological effects M Anbarasu, S Asokan Applied Physics A 80, 249-252, 2005	22	2005
Electrical switching and in situ Raman scattering studies on the set-reset processes in Ge–Te–Si glass M Anbarasu, S Asokan, S Prusty, AK Sood Applied Physics Letters 91 (9), 2007	21	2007
Local structure of amorphous Ag5In5Sb60Te30 and In3SbTe2 phase change materials revealed by X-ray photoelectron and Raman spectroscopic studies S Sahu, A Manivannan, H Shaik, G Mohan Rao Journal of Applied Physics 122 (1), 2017	20	2017
Impact of thermal boundary resistance on the performance and scaling of phase-change memory device S Durai, S Raj, A Manivannan IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2019	19	2019
Understanding the structure and properties of phase change materials for data storage applications M Anbarasu, M Wuttig Journal of the Indian Institute of Science 91 (2), 259-274, 2011	18	2011
Laser assisted wet texturing of flexible polyethylene terephthalate substrate using Nd3+: YAG laser for photovoltaics devices AK Shukla, K Akash, IA Palani, A Manivannan Materials Science and Engineering: B 226, 78-85, 2017	17*	2017
Femtosecond laser-induced ultrafast transient snapshots and crystallization dynamics in phase change material S Sahu, R Sharma, KV Adarsh, A Manivannan Optics Letters 42 (13), 2503-2506, 2017	15	2017
Direct evidence for structural transformation and higher thermal stability of amorphous insbte phase change material SK Pandey, A Manivannan Scripta Materialia 192, 73-77, 2021	14	2021
Multilevel accumulative switching processes in growth-dominated AgInSbTe phase change material MS Arjunan, A Mondal, A Das, KV Adarsh, A Manivannan Optics Letters 44 (12), 3134-3137, 2019	14	2019
Extremely High Contrast Multi‐Level Resistance States of In₃SbTe₂ Device for High Density Non‐Volatile Memory Applications SK Pandey, A Manivannan physica status solidi (RRL)–Rapid Research Letters 11 (9), 1700227, 2017	14	2017
Evidence for a thermally reversing window in bulk Ge–Te–Si glasses revealed by alternating differential scanning calorimetry M Anbarasu, KK Singh, S Asokan Philosophical Magazine 88 (4), 599-605, 2008	14	2008

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