| Partially cylindrical fin field-effect transistor: a novel device for nanoscale applications M Mehrad, AA Orouji IEEE Transactions on Device and Materials Reliability 10 (2), 271-275, 2010 | 47 | 2010 |
| Breakdown voltage improvement of LDMOSs by charge balancing: An inserted P-layer in trench oxide (IPT-LDMOS) AA Orouji, M Mehrad Superlattices and Microstructures 51 (3), 412-420, 2012 | 43 | 2012 |
| The best control of parasitic BJT effect in SOI-LDMOS with SiGe window under channel AA Orouji, M Mehrad IEEE transactions on electron devices 59 (2), 419-425, 2011 | 41 | 2011 |
| Injected charges in partial SOI LDMOSFETs: a new technique for improving the breakdown voltage M Mehrad, AA Orouji Superlattices and Microstructures 57, 77-84, 2013 | 33 | 2013 |
| A novel high breakdown voltage LDMOS by protruded silicon dioxide at the drift region M Zareiee, AA Orouji, M Mehrad Journal of computational Electronics 15, 611-618, 2016 | 32 | 2016 |
| A new nanoscale and high temperature field effect transistor: Bi level FinFET M Mehrad, AA Orouji Physica E: Low-dimensional Systems and Nanostructures 44 (3), 654-658, 2011 | 32 | 2011 |
| Controlled kink effect in a novel high-voltage LDMOS transistor by creating local minimum in energy band diagram M Mehrad, M Zareiee, AA Orouji IEEE Transactions on electron devices 64 (10), 4213-4218, 2017 | 29 | 2017 |
| Improved device performance in nano scale transistor: an extended drain SOI MOSFET M Mehrad, M Zareiee ECS Journal of Solid State Science and Technology 5 (7), M74, 2016 | 29 | 2016 |
| A new technique in LDMOS transistors to improve the breakdown voltage and the lattice temperature M Mehrad, AA Orouji, M Taheri Materials Science in Semiconductor Processing 34, 276-280, 2015 | 26 | 2015 |
| A new rounded edge fin field effect transistor for improving self-heating effects AA Orouji, M Mehrad Japanese Journal of Applied Physics 50 (12R), 124303, 2011 | 25 | 2011 |
| Omega shape channel LDMOS: a novel structure for high voltage applications M Mehrad Physica E: Low-dimensional Systems and Nanostructures 75, 196-201, 2016 | 21 | 2016 |
| New trench gate power MOSFET with high breakdown voltage and reduced on-resistance using a SiGe zone in drift region M Mehrad, AA Orouji Current applied physics 12 (5), 1340-1344, 2012 | 21 | 2012 |
| Periodic trench region in LDMOS transistor: a new reliable structure with high breakdown voltage M Mehrad Superlattices and Microstructures 91, 193-200, 2016 | 19 | 2016 |
| Controlling floating body effect in high temperatures: L-shape SiGe region in nano-scale MOSFET M Mehrad Superlattices and Microstructures 85, 573-580, 2015 | 18 | 2015 |
| Thin layer oxide in the drift region of laterally double-diffused metal oxide semiconductor on silicon-on-insulator: a novel device structure enabling reliable high-temperature … M Mehrad Materials Science in Semiconductor Processing 30, 599-604, 2015 | 18 | 2015 |
| A novel high voltage lateral double diffused metal oxide semiconductor (LDMOS) device with a U-shaped buried oxide feature M Mehrad, AA Orouji Materials science in semiconductor processing 16 (6), 1977-1981, 2013 | 16 | 2013 |
| A reliable nano device with appropriate performance in high temperatures M Zareiee, M Mehrad ECS Journal of Solid State Science and Technology 6 (4), M50, 2017 | 14 | 2017 |
| Positive charges at buried oxide interface of RESURF: An analytical model for the breakdown voltage AA Orouji, M Mehrad Superlattices and Microstructures 72, 336-343, 2014 | 13 | 2014 |
| Reducing floating body and short channel effects in nano scale transistor: inserted P+ region SOI-MOSFET M Mehrad ECS Journal of Solid State Science and Technology 5 (9), M88, 2016 | 12 | 2016 |
| C-shape silicon window nano MOSFET for reducing the short channel effects M Mehrad, ES Ghadi 2017 Joint International EUROSOI Workshop and International Conference on …, 2017 | 11 | 2017 |
Ali Asghar OroujiProfessor, Semnan UniversityVerified email at semnan.ac.ir
