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Theodore D Moustakas
Theodore D Moustakas
Boston University, Electrical and Computer Engineering Department
Verified email at bu.edu - Homepage
Title
Cited by
Year
High efficiency ultraviolet light emitting diode with electron tunnelling
Y Liao, TD Moustakas
US Patent 11,646,395, 2023
12023
Ultraviolet light emitting diode structures and methods of manufacturing the same
Y Liao, TD Moustakas
US Patent 11,502,220, 2022
2022
Ultraviolet light emitting diode structures and methods of manufacturing the same
Y Liao, TD Moustakas
US Patent 10,593,830, 2020
2020
High efficiency ultraviolet light emitting diode with band structure potential fluctuations
Y Liao, TD Moustakas
US Patent 10,535,801, 2020
32020
Ultraviolet light emitting diodes
GC Brummer, M Denis, TD Moustakas
US Patent 10,361,343, 2019
182019
Compositional and strain analysis of In (Ga) N/GaN short period superlattices
GP Dimitrakopulos, IG Vasileiadis, C Bazioti, J Smalc-Koziorowska, S Kret, ...
Journal of Applied Physics 123 (2), 2018
162018
How indium nitride senses water
V Jovic, S Moser, S Ulstrup, D Goodacre, E Dimakis, R Koch, G Katsoukis, ...
Nano letters 17 (12), 7339-7344, 2017
212017
Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz
TD Moustakas, R Paiella
Reports on Progress in Physics 80 (10), 106501, 2017
1932017
III-nitride terahertz photodetectors for the Reststrahlen gap of intersubband optoelectronics
R Paiella, H Durmaz, FF Sudradjat, D Nothern, GC Brummer, W Zhang, ...
Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and …, 2017
2017
Analysis of InGaN nanodots grown by droplet heteroepitaxy using grazing incidence small-angle X-ray scattering and electron microscopy
JM Woodward, AY Nikiforov, KF Ludwig, TD Moustakas
Journal of Applied Physics 122 (6), 2017
142017
Plasmonic Control of Radiation and Absorption Processes in Semiconductor Quantum Dots
R Paiella, TD Moustakas
Boston Univ., MA (United States), 2017
2017
Deep-ultraviolet emitting AlGaN multiple quantum well graded-index separate-confinement heterostructures grown by MBE on SiC substrates
H Sun, J Yin, EF Pecora, L Dal Negro, R Paiella, TD Moustakas
IEEE Photonics Journal 9 (4), 1-9, 2017
362017
GaN terahertz photodetectors for the reststrahlen gap of intersubband optoelectronics
H Durmaz, D Nothern, G Brummer, TD Moustakas, R Paiella
CLEO: Science and Innovations, SM4J. 7, 2017
2017
High efficiency ultraviolet light emitting diode with band structure potential fluctuations
Y Liao, TD Moustakas
US Patent 9,627,580, 2017
372017
Jacques Isaac Pankove
TD Moustakas, B Monemar
Physics Today 70 (4), 64-64, 2017
2017
Thickness dependent thermal conductivity of gallium nitride
E Ziade, J Yang, G Brummer, D Nothern, T Moustakas, AJ Schmidt
Applied Physics Letters 110 (3), 2017
892017
Structural and Optical Properties of Al0. 30Ga0. 70N/AlN Multiple Quantum Wells Grown on Vicinal 4H p-SiC Substrates by Molecular Beam Epitaxy
G Brummer, D Nothern, TD Moustakas
MRS Advances 2 (5), 271-276, 2017
12017
Structure of short period In (Ga) N/GaN superlattices comprising ultra‐thin quantum wells
G Dimitrakopulos, C Bazioti, T Karakostas, J Kioseoglou, T Pavloudis, ...
European Microscopy Congress 2016: Proceedings, 592-593, 2016
2016
Ultraviolet optoelectronic devices based on AlGaN alloys grown by molecular beam epitaxy
TD Moustakas
MRS Communications 6 (3), 247-269, 2016
502016
Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures
H Durmaz, D Nothern, G Brummer, TD Moustakas, R Paiella
Applied Physics Letters 108 (20), 2016
492016
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Articles 1–20