Hirokjyoti Kalita

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Tania RoyDuke UniversityVerified email at duke.edu
Adithi KrishnaprasadBackend Integration Engineer, Intel CorporationVerified email at intel.com
Yeonwoong (Eric) JungProfessor, Materials Science & Engineering, University of Central FloridaVerified email at ucf.edu
Hee-Suk ChungPrincipal Researcher, Korea Basic Science Institute, Republic of KoreaVerified email at kbsi.re.kr
Durjoy DevFront End Process Integration Engineer, Intel CorporationVerified email at intel.com
sonali dasUniversity of Central FloridaVerified email at ucf.edu
saiful I khondakerUniversity of Central FloridaVerified email at ucf.edu
Laurene TetardUniversity of Central FloridaVerified email at ucf.edu
Yi DingUniversity of Central FloridaVerified email at knights.ucf.edu
Md Ashraful Islam, Ph.D.Intel CorporationVerified email at knights.ucf.edu
Sajeevi WithanageUniversity of Central FloridaVerified email at knights.ucf.edu
Andrew O'HaraWestern Michigan UniversityVerified email at wmich.edu
Enxia ZhangUniversity of Central FloridaVerified email at ucf.edu
Pan WangVanderbilt University;Verified email at vanderbilt.edu

Hirokjyoti Kalita

Micron Technology

Verified email at micron.com

CMOS Memory - DRAM and NAND Emerging Memories Technology


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Artificial Neuron using Vertical MoS₂/Graphene Threshold Switching Memristors H Kalita, A Krishnaprasad, N Choudhary, S Das, D Dev, Y Ding, L Tetard, ... Scientific reports 9 (1), 53, 2019	86	2019
Electronic synapses with near-linear weight update using MoS2/graphene memristors A Krishnaprasad, N Choudhary, S Das, D Dev, H Kalita, HS Chung, ... Applied Physics Letters 115 (10), 2019	58	2019
Centimeter-scale 2D van der Waals vertical heterostructures integrated on deformable substrates enabled by gold sacrificial layer-assisted growth MA Islam, JH Kim, A Schropp, H Kalita, N Choudhary, D Weitzman, ... Nano letters 17 (10), 6157-6165, 2017	34	2017
High quality gate dielectric/MoS2 interfaces probed by the conductance method D Dev, A Krishnaprasad, H Kalita, S Das, V Rodriguez, J Calderon Flores, ... Applied Physics Letters 112 (23), 2018	33	2018
Uniform Vapor-Pressure-Based Chemical Vapor Deposition Growth of MoS₂ Using MoO₃ Thin Film as a Precursor for Coevaporation SS Withanage, H Kalita, HS Chung, T Roy, Y Jung, SI Khondaker ACS omega 3 (12), 18943-18949, 2018	32	2018
Total-Ionizing-Dose Response of MoS₂ Transistors With ZrO₂ and h-BN Gate Dielectrics P Wang, H Kalita, A Krishnaprasad, D Dev, A O’Hara, R Jiang, E Zhang, ... IEEE Transactions on Nuclear Science 66 (7), 1584-1591, 2018	9	2018
Artificial Neuron using MoS₂/Graphene Threshold Switching Memristors H Kalita, A Krishnaprasad, N Choudhary, S Das, HS Chung, Y Jung, ... 2018 76th Device Research Conference (DRC), 1-2, 2018	2	2018
Origins of interface traps in MoS₂-based field-effect transistors A O'Hara, A Krishnaprasad, H Kalita, T Roy, S Pantelides APS March Meeting Abstracts 2018, L37. 004, 2018		2018
Neuromorphic and Quantum Devices Y Shi, S Oh, X Liu, D Kuzum, AN using MoS, GTS Memristors, H Kalita, ...

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