John F. Conley, Jr.

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P.M. LenahanDistinguished Professor of Engineering Science and Mecahnics and Co-Chair, Inter-College GraduateVerified email at engr.psu.edu
Nasir AlimardaniSchool of EECS, Oregon State UniversityVerified email at eecs.oregonstate.edu
Melanie JenkinsDepartment of Electrical Engineering and Computer Science, Oregon State UniversityVerified email at oregonstate.edu
John F. WagerProfessor Emeritus, EECS, Oregon State UniversityVerified email at ece.orst.edu
Jun JiaoProfessor, Mechanical and Materials Engineering, Portland State UniversityVerified email at pdx.edu
Sean Weston SmithRadiant Technologies Inc.Verified email at ferrodevices.com
Dustin AustinLam ResearchVerified email at lamresearch.com
Dr. Lifeng DongHamline UniversityVerified email at qust.edu.cn
Konner E. K. HoldenLam ResearchVerified email at lamresearch.com
Gregory S HermanOregon State UniversityVerified email at oregonstate.edu
Ashley Diane MasonMaterials Science Graduate Research Assistant, Oregon State UniversityVerified email at engr.orst.edu
Eric M VogelHightower Professor of Materials Science and Engineering, Georgia Institute of TechnologyVerified email at mse.gatech.edu
John SimonsenOregon State UniversityVerified email at onid.oregonstate.edu
Aivars LelisARLVerified email at mail.mil
Ryan H. ManserghGoogleVerified email at google.com
Brady J. GibbonsMaterials Science, Oregon State UniversityVerified email at oregonstate.edu
Sean KingPrincipal EngineerVerified email at intel.com
Timothy GutuAssociate Professor of Physics, University of ZimbabweVerified email at science.uz.ac.zw
Chih-hung ChangOregon State UniversityVerified email at oregonstate.edu
Liney ArnadottirOregon State UniversityVerified email at oregonstate.edu

John F. Conley, Jr.

Professor of Electrical Engineering and Computer Science, Oregon State University

Verified email at eecs.oregonstate.edu - Homepage

metal-insulator-metal (MIM and MIIM) devices atomic layer deposition (ALD)thin film dielectrics high-k oxides electron spin


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Atomic layer deposition of oxide film J Conley, Y Ono, R Solanki US Patent App. 10/376,774, 2004	522	2004
Method for depositing a nanolaminate film by atomic layer deposition JF Conley Jr, Y Ono, R Solanki US Patent 6,930,059, 2005	501	2005
Nanolaminate film atomic layer deposition method JF Conley Jr, Y Ono, R Solanki US Patent 7,053,009, 2006	466	2006
Method to perform selective atomic layer deposition of zinc oxide JF Conley Jr, Y Ono, DR Evans US Patent 7,160,819, 2007	453	2007
Method to control the interfacial layer for deposition of high dielectric constant films JF Conley Jr, Y Ono US Patent 6,875,677, 2005	442	2005
What Can Electron Paramagnetic Resonance Tell Us About the Si/SiO2 System? PM LENAHAN, JF CONLEY Journal of Vacuum Science & Technology B 16 (4), 2134 - 2153, 1998	430	1998
Instabilities in amorphous oxide semiconductor thin-film transistors JF Conley IEEE Transactions on Device and materials reliability 10 (4), 460-475, 2010	269	2010
Modulated temperature method of atomic layer deposition (ALD) of high dielectric constant film J Conley, O John F., S Yoshi, G M. US Patent 7,442,415, 2014	232*	2014
Modulated temperature method of atomic layer deposition (ALD) of high dielectric constant films JF Conley Jr, Y Ono, GM Stecker US Patent 7,442,415, 2008	232	2008
Advancing MIM electronics: Amorphous metal electrodes EW Cowell III, N Alimardani, CC Knutson, JF Conley Jr, DA Keszler, ... Advanced Materials(FRG) 23 (1), 74-78, 2011	170	2011
Dielectrophoretically controlled fabrication of single-crystal nickel silicide nanowire interconnects L Dong, J Bush, V Chirayos, R Solanki, J Jiao, Y Ono, JF Conley, ... Nano Letters 5 (10), 2112-2115, 2005	164	2005
Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si AY Kang, PM Lenahan, JF Conley Jr Applied Physics Letters 83 (16), 3407-3409, 2003	135	2003
Atomic layer deposition of nanolaminate film J Conley, Y Ono, R Solanki US Patent App. 10/376,794, 2004	124	2004
Atomic layer deposition of hafnium oxide using anhydrous hafnium nitrate JF Conley Jr, Y Ono, W Zhuang, DJ Tweet, W Gao, SK Mohammed, ... Electrochemical and Solid State Letters 5 (5), C57, 2002	114	2002
Electron spin resonance evidence that E'/sub/spl gamma//centers can behave as switching oxide traps JF Conley, PM Lenahan, AJ Lelis, TR Oldham IEEE Transactions on Nuclear Science 42 (6), 1744-1749, 1995	111	1995
ZnO-nanoparticle-coated carbon nanotubes demonstrating enhanced electron field-emission properties JM Green, L Dong, T Gutu, J Jiao, JF Conley, Y Ono Journal of Applied Physics 99 (9), 2006	110	2006
Directed assembly of ZnO nanowires on a Si substrate without a metal catalyst using a patterned ZnO seed layer JF Conley, L Stecker, Y Ono Nanotechnology 16 (2), 292, 2005	109	2005
Observation and electronic characterization of ‘‘new’’E′ center defects in technologically relevant thermal SiO2 on Si: An additional complexity in oxide charge trapping JF Conley, PM Lenahan, HL Evans, RK Lowry, TJ Morthorst Journal of applied physics 76 (5), 2872-2880, 1994	108	1994
The radiation response of the high dielectric-constant hafnium oxide/silicon system AY Kang, PM Lenahan, JF Conley IEEE Transactions on Nuclear Science 49 (6), 2636-2642, 2002	107	2002
Atomic layer deposition of thin hafnium oxide films using a carbon free precursor JF Conley Jr, Y Ono, DJ Tweet, W Zhuang, R Solanki Journal of applied physics 93 (1), 712-718, 2003	106	2003

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