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Wei ZHOU
Wei ZHOU
Research Assistant Professor, Dept. of ECE, The Hong Kong University of Science and Technology
Verified email at ust.hk - Homepage
Title
Cited by
Cited by
Year
Bridged-grain solid-phase-crystallized polycrystalline-silicon thin-film transistors
W Zhou, Z Meng, S Zhao, M Zhang, R Chen, M Wong, HS Kwok
IEEE electron device letters 33 (10), 1414-1416, 2012
542012
Self-aligned indium–gallium–zinc oxide thin-film transistor with source/drain regions doped by implanted arsenic
R Chen, W Zhou, M Zhang, M Wong, HS Kwok
IEEE Electron Device Letters 34 (1), 60-62, 2012
452012
Self-aligned top-gate InGaZnO thin film transistors using SiO2/Al2O3 stack gate dielectric
R Chen, W Zhou, M Zhang, M Wong, HS Kwok
Thin Solid Films 548, 572-575, 2013
412013
Investigation of high-performance ITO-stabilized ZnO TFTs with hybrid-phase microstructural channels
S Deng, R Chen, G Li, Z Xia, M Zhang, W Zhou, M Wong, HS Kwok
IEEE Transactions on Electron Devices 64 (8), 3174-3182, 2017
402017
High-performance staggered top-gate thin-film transistors with hybrid-phase microstructural ITO-stabilized ZnO channels
S Deng, R Chen, G Li, Z Xia, M Zhang, W Zhou, M Wong, HS Kwok
Applied Physics Letters 109 (18), 2016
342016
High performance self-aligned top-gate ZnO thin film transistors using sputtered Al2O3 gate dielectric
R Chen, W Zhou, M Zhang, HS Kwok
Thin Solid Films 520 (21), 6681-6683, 2012
332012
Bridged-grain polycrystalline silicon thin-film transistors
S Zhao, Z Meng, W Zhou, J Ho, M Wong, HS Kwok
IEEE transactions on electron devices 60 (6), 1965-1970, 2013
272013
Characterization of DC-stress-induced degradation in bridged-grain polycrystalline silicon thin-film transistors
M Zhang, W Zhou, R Chen, M Wong, HS Kwok
IEEE Transactions on Electron Devices 61 (9), 3206-3212, 2014
222014
Top-gate thin-film transistors based on GaN channel layer
R Chen, W Zhou, H Sing Kwok
Applied Physics Letters 100 (2), 2012
222012
A Simple Method to Grow Thermal Interlayer for High-Performance SPC Poly-Si TFTs Using Gate Dielectric
M Zhang, W Zhou, R Chen, M Wong, HS Kwok
IEEE electron device letters 35 (5), 548-550, 2014
182014
Vertically integrated optical sensor with photoconductive gain> 10 and fill factor> 70%
X Zhou, M Zhang, Y Xu, W Zhou, K Wang, A Nathan, M Wong, HS Kwok, ...
IEEE Electron Device Letters 39 (3), 386-389, 2018
162018
Water-enhanced negative bias temperature instability in p-type low temperature polycrystalline silicon thin film transistors
M Zhang, W Zhou, R Chen, M Wong, HS Kwok
Microelectronics Reliability 54 (1), 30-32, 2014
152014
High-performance polycrystalline silicon thin-film transistors based on metal-induced crystallization in an oxidizing atmosphere
R Chen, W Zhou, M Zhang, M Wong, HS Kwok
IEEE Electron Device Letters 36 (5), 460-462, 2015
132015
Study of the characteristics of solid phase crystallized bridged-grain poly-Si TFTs
W Zhou, S Zhao, R Chen, M Zhang, JYL Ho, M Wong, HS Kwok
IEEE Transactions on Electron Devices 61 (5), 1410-1416, 2014
132014
Fabrication of bridged-grain polycrystalline silicon thin film transistors by nanoimprint lithography
W Zhou, JYL Ho, S Zhao, R Chen, M Wong, HS Kwok
Thin solid films 534, 636-639, 2013
132013
Fabrication of high-performance bridged-grain polycrystalline silicon TFTs by laser interference lithography
S Deng, R Chen, W Zhou, JYL Ho, M Wong, HS Kwok
IEEE Transactions on Electron Devices 63 (3), 1085-1090, 2016
122016
Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers
R Chen, W Zhou, M Zhang, HS Kwok
Thin Solid Films 564, 397-400, 2014
122014
Top-gate GaN thin-film transistors based on AlN/GaN heterostructures
R Chen, W Zhou, M Zhang, HS Kwok
IEEE electron device letters 33 (9), 1282-1284, 2012
112012
Significant reduction of dynamic negative bias stress-induced degradation in bridged-grain poly-Si TFTs
M Zhang, Z Xia, W Zhou, R Chen, M Wong
IEEE Electron Device Letters 36 (2), 141-143, 2014
102014
OFF-state-stress-induced instability in switching polycrystalline silicon thin-film transistors and its improvement by a bridged-grain structure
M Zhang, Y Yan, G Li, S Deng, W Zhou, R Chen, M Wong, HS Kwok
IEEE Electron Device Letters 39 (11), 1684-1687, 2018
92018
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