| Advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers YK Kuo, TH Wang, JY Chang, MC Tsai Applied Physics Letters 99 (9), 091107-1-091107-3, 2011 | 76 | 2011 |
| Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers YK Kuo, TH Wang, JY Chang Applied Physics Letters 100 (3), 2012 | 70 | 2012 |
| Reduced efficiency droop in blue InGaN light-emitting diodes by thin AlGaN barriers JY Chang, YA Chang, TH Wang, FM Chen, BT Liou, YK Kuo Optics Letters 39 (3), 497-500, 2014 | 16 | 2014 |
| Design and characterization of polarization-reversed AlInGaN based ultraviolet light-emitting diode YA Chang, YR Lin, JY Chang, TH Wang, YK Kuo IEEE Journal of Quantum Electronics 49 (6), 553-559, 2013 | 14 | 2013 |
| Spectral competition of chirped dual-wavelength emission in monolithic InGaN multiple-quantum well light-emitting diodes TH Wang, YK Kuo Applied Physics Letters 102 (17), 171112-1-171112-3, 2013 | 13 | 2013 |
| Blue InGaN Light-Emitting Diodes With Multiple GaN-InGaN Barriers YK Kuo, TH Wang, JY Chang IEEE Journal of Quantum Electronics 48 (7), 946-951, 2012 | 13 | 2012 |
| Efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers TH Wang, JY Chang, MC Tsai, YK Kuo Proceedings of SPIE 7954, 79541F-1-79541F-6, 2011 | 12 | 2011 |
| Slightly-doped step-like electron-blocking layer in InGaN light-emitting diodes YK Kuo, TH Wang, JY Chang, JD Chen IEEE Photonics Technology Letters 24 (17), 1506-1508, 2012 | 9 | 2012 |
| Efficiency Enhancement of Blue InGaN Light-Emitting Diodes With Shallow First Well TH Wang, YK Kuo IEEE Photonics Technology Letters 24 (22), 2084-2086, 2012 | 7 | 2012 |
| Auger recombination in monolithic dual-wavelength InGaN light-emitting diodes YK Kuo, TH Wang, YA Chang, JY Chang, FM Chen, YH Shih Journal of Display Technology 12 (11), 1398-1402, 2016 | 4 | 2016 |
Miao-Chan TsaiCenter for High Technology Materials, University of New MexicoVerified email at tsmc.com
