| Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors Y Guo, X Wei, J Shu, B Liu, J Yin, C Guan, Y Han, S Gao, Q Chen Applied Physics Letters 106 (10), 2015 | 266 | 2015 |
| The intrinsic origin of hysteresis in MoS 2 field effect transistors J Shu, G Wu, Y Guo, B Liu, X Wei, Q Chen Nanoscale 8 (5), 3049-3056, 2016 | 168 | 2016 |
| Unravelling Orientation Distribution and Merging Behavior of Monolayer MoS2 Domains on Sapphire Q Ji, M Kan, Y Zhang, Y Guo, D Ma, J Shi, Q Sun, Q Chen, Y Zhang, Z Liu Nano letters 15 (1), 198-205, 2015 | 161 | 2015 |
| Distinctive in-plane cleavage behaviors of two-dimensional layered materials Y Guo, C Liu, Q Yin, C Wei, S Lin, TB Hoffman, Y Zhao, JH Edgar, Q Chen, ... ACS nano 10 (9), 8980-8988, 2016 | 111 | 2016 |
| Study on the resistance distribution at the contact between molybdenum disulfide and metals Y Guo, Y Han, J Li, A Xiang, X Wei, S Gao, Q Chen ACS nano 8 (8), 7771-7779, 2014 | 110 | 2014 |
| Negative photoconductivity of InAs nanowires Y Han, X Zheng, M Fu, D Pan, X Li, Y Guo, J Zhao, Q Chen Physical Chemistry Chemical Physics 18 (2), 818-826, 2016 | 76 | 2016 |
| Electrical transport properties of individual WS2 nanotubes and their dependence on water and oxygen absorption C Zhang, Z Ning, Y Liu, T Xu, Y Guo, A Zak, Z Zhang, S Wang, R Tenne, ... Applied Physics Letters 101 (11), 2012 | 50 | 2012 |
| Transversally and axially tunable carbon nanotube resonators in situ fabricated and studied inside a scanning electron microscope ZY Ning, TW Shi, MQ Fu, Y Guo, XL Wei, S Gao, Q Chen Nano letters 14 (3), 1221-1227, 2014 | 40 | 2014 |
| Discovering the forbidden Raman modes at the edges of layered materials Y Guo, W Zhang, H Wu, J Han, Y Zhang, S Lin, C Liu, K Xu, J Qiao, W Ji, ... Science advances 4 (12), eaau6252, 2018 | 37 | 2018 |
| Mesoscopic sliding ferroelectricity enabled photovoltaic random access memory for material-level artificial vision system Y Sun, S Xu, Z Xu, J Tian, M Bai, Z Qi, Y Niu, HH Aung, X Xiong, J Han, ... Nature communications 13 (1), 5391, 2022 | 30 | 2022 |
| Nonlinear amplification of chirality in self-assembled plasmonic nanostructures M Song, L Tong, S Liu, Y Zhang, J Dong, Y Ji, Y Guo, X Wu, X Zhang, ... ACS nano 15 (3), 5715-5724, 2021 | 21 | 2021 |
| Contact properties of field-effect transistors based on indium arsenide nanowires thinner than 16 nm T Shi, M Fu, D Pan, Y Guo, J Zhao, Q Chen Nanotechnology 26 (17), 175202, 2015 | 19 | 2015 |
| Edge‐States‐Induced Disruption to the Energy Band Alignment at Thickness‐Modulated Molybdenum Sulfide Junctions Y Guo, J Yin, X Wei, Z Tan, J Shu, B Liu, Y Zeng, S Gao, H Peng, Z Liu, ... Advanced Electronic Materials 2 (8), 1600048, 2016 | 18 | 2016 |
| Modulation on the electronic properties and band gap of layered ReSe2 via strain engineering Y Liu, X Li, Y Guo, T Yang, K Chen, C Lin, J Wei, Q Liu, Y Lu, L Dong, ... Journal of Alloys and Compounds 827, 154364, 2020 | 13 | 2020 |
| Field-effect at electrical contacts to two-dimensional materials Y Guo, Y Sun, A Tang, CH Wang, Y Zhao, M Bai, S Xu, Z Xu, T Tang, ... Nano Research 14 (12), 4894-4900, 2021 | 12 | 2021 |
| Raman Spectroscopy of Dispersive Two-Dimensional Materials: A Systematic Study on MoS2 Solution Y Zhao, Y Sun, M Bai, S Xu, H Wu, J Han, H Yin, C Guo, Q Chen, Y Chai, ... The Journal of Physical Chemistry C 124 (20), 11092-11099, 2020 | 12 | 2020 |
| Remarkable influence of slack on the vibration of a single-walled carbon nanotube resonator Z Ning, M Fu, G Wu, C Qiu, J Shu, Y Guo, X Wei, S Gao, Q Chen Nanoscale 8 (16), 8658-8665, 2016 | 12 | 2016 |
| In situ multiproperty measurements of individual nanomaterials in SEM and correlation with their atomic structures ZY Ning, MQ Fu, TW Shi, Y Guo, XL Wei, S Gao, Q Chen Nanotechnology 25 (27), 275703, 2014 | 8 | 2014 |
| Physical reservoir computing based on nanoscale materials and devices Z Qi, L Mi, H Qian, W Zheng, Y Guo, Y Chai Advanced Functional Materials 33 (43), 2306149, 2023 | 7 | 2023 |
| Asymmetric bias-induced barrier lowering as an alternative origin of current rectification in geometric diodes M Bai, Y Zhao, S Xu, T Tang, Y Guo Communications Physics 4 (1), 236, 2021 | 7 | 2021 |
Xianlong WeiSchool of Electronics, Peking UniversityVerified email at pku.edu.cn
