| Improving the performance of Ge2Sb2Te5 materials via nickel doping: Towards RF-compatible phase-change devices P Guo, JA Burrow, GA Sevison, A Sood, M Asheghi, JR Hendrickson, ... Applied Physics Letters 113 (17), 2018 | 46 | 2018 |
| Phase Change Dynamics and Two-Dimensional 4-Bit Memory in Ge2Sb2Te5 via Telecom-Band Encoding GA Sevison, S Farzinazar, JA Burrow, C Perez, H Kwon, J Lee, M Asheghi, ... ACS Photonics 7 (2), 480-487, 2020 | 33 | 2020 |
| Tungsten-doped Ge2Sb2Te5 phase change material for high-speed optical switching devices P Guo, JA Burrow, GA Sevison, H Kwon, C Perez, JR Hendrickson, ... Applied Physics Letters 116 (13), 2020 | 20 | 2020 |
| Power-dependent investigation of photo-response from GeSn-based pin photodetector operating at high power density C Chang, HH Cheng, GA Sevison, JR Hendrickson, Z Li, I Agha, ... Materials 15 (3), 989, 2022 | 14 | 2022 |
| Electrical and optical properties of nickel-doped Ge2Sb2Te5 films produced by magnetron co-sputtering P Guo, GA Sevison, JA Burrow, I Agha, A Sarangan Nanoengineering: Fabrication, Properties, Optics, and Devices XV 10730, 59-65, 2018 | 5 | 2018 |
| Wavelength and power dependence on multilevel behavior of phase change materials GA Sevison, JA Burrow, H Guo, A Sarangan, JR Hendrickson, I Agha AIP Advances 11 (8), 2021 | 3 | 2021 |
| Thermally Tunable Far-Infrared Metasurfaces Enabled by Ge2Sb2Te5Phase-Change Material R Yahiaoui, J Mathews, JA Burrow, I Agha, G Sevison, AM Urbas, ... 2018 IEEE Research and Applications of Photonics In Defense Conference …, 2018 | 3 | 2018 |
| Independent measurement of phase and amplitude modulation in phase change material-based devices GA Sevison, T Malone, R Heenkenda, JA Burrow, A Sarangan, ... Optical Materials Express 12 (7), 2899-2911, 2022 | 2 | 2022 |
| Free-Space optical switching of GST phase-change thin films via 1550 nm light GA Sevison, JA Burrow, A Aboujaoude, M Mircovich, A Sarangan, ... Free-Space optical switching of GST phase-change thin films via 1550 nm …, 2018 | 2 | 2018 |
| Optical and electrical properties of phase change materials for high-speed optoelectronics JA Burrow, P Guo, GA Sevison, H Kwon, C Perez, M Asheghi, ... CLEO: Science and Innovations, SF2O. 5, 2019 | 1 | 2019 |
| Improving the performance of Ge P Guo, JA Burrow, GA Sevison, A Sood, M Asheghi, JR Hendrickson, ... Appl. Phys. Lett 113 (171903), 2018 | 1 | 2018 |
| Infrared vertical external cavity surface emitting laser threshold quantum magnetometer NS Gottesman, MA Slocum, GA Sevison, M Wolf, ML Lukowski, ... Vertical External Cavity Surface Emitting Lasers (VECSELs) XIII 12868, 30-41, 2024 | | 2024 |
| Infrared vertical external cavity surface emitting laser threshold magnetometer NS Gottesman, MA Slocum, GA Sevison, M Wolf, ML Lukowski, ... Applied Physics Letters 124 (9), 2024 | | 2024 |
| Intracavity Laser Absorption-based Vector Magnetic Field Sensing RG Bedford, NS Gottesman, GA Sevison, M Fallahi, M Wolf, M Slocum Laser Science, JTu5A. 38, 2023 | | 2023 |
| Phase Change Materials for Optoelectronic Devices and Memories GA Sevison | | 2021 |
| Phase Change Materials for Optoelectronic Devices and Memories: Characterization and Implementation GA Sevison University of Dayton, 2021 | | 2021 |
| Pixel level demonstration of phase change material based spatial light modulation JA Burrow, GA Sevison, M Asheghi, JR Hendrickson, A Sarangan, ... 2020 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2020 | | 2020 |
| Waveform-Agile Frequency Doubled Laser System for Optical Switching and Characterization of Phase Change Materials at Near-IR Wavelengths GA Sevison, JA Burrow, JR Hendrickson, A Sarangan, I Agha CLEO: Science and Innovations, JTu2B. 14, 2020 | | 2020 |
| Tungsten-doped Ge P Guo, JA Burrow, GA Sevison, H Kwon, C Perez, JR Hendrickson, ... | | 2020 |
| Phase Change Dynamics And 2-Dimensional 4-BIT Memory In Ge (2) Sb (2) Te (5) VIA Telecom-Band Encoding (Preprint) J Hendrickson, S Farzinazar, GA Sevison, JA Burrow, A Sarangan, I Agha, ... | | 2019 |
