| A Kinetic Model for the Generation and Annihilation of Thermally Induced Carrier Donors in a Semiconducting Metal‐Oxide Thin Film Y Wang, W Jiang, X Xie, Z Xia, M Wong Small 18 (41), 2203346, 2022 | 12 | 2022 |
| Neuromorphic implementation of logic functions based on parallel dual-gate thin-film transistors Y Hu, Y Wang, T Lei, F Wang, M Wong IEEE Electron Device Letters 43 (5), 741-744, 2022 | 11 | 2022 |
| A comparative study on inverters built with dual-gate thin-film transistors based on depletion-or enhancement-mode technologies T Lei, R Shi, Y Wang, Z Xia, M Wong IEEE Transactions on Electron Devices 69 (6), 3186-3191, 2022 | 5 | 2022 |
| P‐1.1: Characterization of the Off‐State Current of an Elevated‐Metal Metal‐Oxide Thin‐Film Transistor Y Wang, Z Xia, M Wong SID Symposium Digest of Technical Papers 52, 413-416, 2021 | 5 | 2021 |
| An artificial neural network implemented using parallel dual-gate thin-film transistors Y Hu, T Lei, Y Wang, F Wang, M Wong IEEE Transactions on Electron Devices 69 (10), 5574-5579, 2022 | 4 | 2022 |
| P‐3: Conductive Indium‐Tin‐Zinc Oxide Formed Using an Oxygen Plasma Treatment Through a Silicon Oxide Cover Layer X Xie, K Chen, Z Zhou, W Jiang, Y Wang, S Wang, Z Xia, M Wong SID Symposium Digest of Technical Papers 54 (1), 1786-1789, 2023 | 2 | 2023 |
| Dependence of the transfer characteristics of metal-oxide thin-film transistors on the temperature of an extended oxidizing heat-treatment Y Wang, Z Xia, M Wong IEEE Electron Device Letters 44 (3), 452-455, 2023 | 2 | 2023 |
| A metal-oxide thin-film transistor technology with donor-species drive-in pretreatment R Shi, Y Wang, Z Xia, M Wong IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| P‐4: Enhanced Scalability and Reliability of High Mobility Elevated‐Metal Metal‐Oxide Thin‐Film Transistors with Bandgap Engineering Z Xia, X Liu, Y Wang, J Li, R Chen, L Lu, HS Kwok, M Wong SID Symposium Digest of Technical Papers 51 (1), 1322-1325, 2020 | 1 | 2020 |
| Effects of Heat-Treatment on the Population of Intrinsic Defects in and the Stability of an Amorphous Metal-Oxide Thin-Film Transistor Y Wang, Z Xia, M Wong IEEE Electron Device Letters, 2023 | | 2023 |
| P‐1: A Study on the Mechanism of Fluorination Enhanced Thermal Stability of IGZO Thin‐Film Transistors Based on a Kinetic Model of Donor‐Defects Y Wang, W Jiang, Z Xia, M Wong SID Symposium Digest of Technical Papers 54 (1), 1778-1781, 2023 | | 2023 |
| P‐1.3: Application of a Kinetic Model to the Characterization of Donor‐Defects in a Fluorinated Metal‐Oxide Semiconductor Y Wang, W Jiang, Z Xia, M Wong SID Symposium Digest of Technical Papers 54, 445-447, 2023 | | 2023 |
| P‐1.4: Oxygen‐Plasma Induced Generation of Mobile Charge Carriers in Indium‐Tin‐Zinc Oxide X Xie, K Chen, Z Zhou, W Jiang, Y Wang, S Wang, Z Xia, M Wong SID Symposium Digest of Technical Papers 54, 448-450, 2023 | | 2023 |
| P‐1.5: The effects of the temperature of fluorination treatment on the reliability of an indium‐gallium‐zinc oxide thin‐film transistor W Jiang, Y Wang, S Wang, Z Xia, M Wong SID Symposium Digest of Technical Papers 54, 451-453, 2023 | | 2023 |
| P‐19: Student Poster: Enhanced Elevated‐Metal Metal‐Oxide Thin‐Film Transistors for Gate‐Driver Circuit Fabricated on a Flexible Substrate R Shi, S Wang, Y Wang, Z Zhou, Z Xia, L Lu, M Wong SID Symposium Digest of Technical Papers 52 (1), 1124-1127, 2021 | | 2021 |
