| Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in -GaN Gate HEMTs J Wei, R Xie, H Xu, H Wang, Y Wang, M Hua, K Zhong, G Tang, J He, ... IEEE Electron Device Letters 40 (4), 526-529, 2019 | 124 | 2019 |
| Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type -GaN Gate HEMTs J He, J Wei, S Yang, Y Wang, K Zhong, KJ Chen IEEE Transactions on Electron Devices 66 (8), 3453-3458, 2019 | 95 | 2019 |
| Identification of trap states in p-GaN layer of a p-GaN/AlGaN/GaN power HEMT structure by deep-level transient spectroscopy S Yang, S Huang, J Wei, Z Zheng, Y Wang, J He, KJ Chen IEEE Electron Device Letters 41 (5), 685-688, 2020 | 58 | 2020 |
| Short Circuit Capability and Short Circuit Induced Instability of a 1.2-kV SiC Power MOSFET J Sun, J Wei, Z Zheng, Y Wang, KJ Chen IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019 | 49 | 2019 |
| Switching Transient Analysis for Normally-off GaN Transistor With p-GaN Gate in a Phase-Leg Circuit R Xie, X Yang, G Xu, J Wei, Y Wang, H Wang, M Tian, F Zhang, W Chen, ... IEEE Transactions on Power Electronics 34 (4), 3711-3728, 2018 | 44 | 2018 |
| Analytical modeling for a novel triple RESURF LDMOS with N-top layer M Qiao, Y Wang, X Zhou, F Jin, H Wang, Z Wang, Z Li, B Zhang IEEE Transactions on Electron Devices 62 (9), 2933-2939, 2015 | 33 | 2015 |
| Dynamic OFF-State Current (Dynamic ) in -GaN Gate HEMTs With an Ohmic Gate Contact Y Wang, M Hua, G Tang, J Lei, Z Zheng, J Wei, KJ Chen IEEE Electron Device Letters 39 (9), 1366-1369, 2018 | 30 | 2018 |
| A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications G Lyu, Y Wang, J Wei, Z Zheng, J Sun, L Zhang, KJ Chen IEEE Transactions on Power Electronics 35 (9), 9669-9679, 2020 | 29 | 2020 |
| Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices Y Wang, G Lyu, J Wei, Z Zheng, J He, J Lei, KJ Chen IEEE Transactions on Industrial Electronics 67 (12), 10284-10294, 2019 | 24 | 2019 |
| IG- and VGS-Dependent Dynamic RON Characterization of Commercial High-Voltage p-GaN Gate Power HEMTs K Zhong, J Wei, J He, S Feng, Y Wang, S Yang, KJ Chen IEEE Transactions on Industrial Electronics 69 (8), 8387-8395, 2021 | 21 | 2021 |
| Dynamic Threshold Voltage in -GaN Gate HEMT J Wei, H Xu, R Xie, M Zhang, H Wang, Y Wang, K Zhong, M Hua, J He, ... 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 20 | 2019 |
| Investigation of Dynamic Under Switching Operation in Schottky-Type p-GaN Gate HEMTs Y Wang, J Wei, S Yang, J Lei, M Hua, KJ Chen IEEE Transactions on Electron Devices 66 (9), 3789-3794, 2019 | 16 | 2019 |
| Observation and characterization of impact ionization-induced OFF-state breakdown in Schottky-type p-GaN gate HEMTs Y Cheng, Y Wang, S Feng, Z Zheng, T Chen, G Lyu, YH Ng, KJ Chen Applied Physics Letters 118 (16), 2021 | 14 | 2021 |
| High-speed power MOSFET with low reverse transfer capacitance using a trench/planar gate architecture J Wei, Y Wang, M Zhang, H Jiang, KJ Chen 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 13 | 2017 |
| 3-D Edge Termination Design and -BV Model of A 700-V Triple RESURF LDMOS With N-Type Top Layer M Qiao, Z Wang, Y Wang, L Yu, Q Xiao, Z Li, B Zhang IEEE Transactions on Electron Devices 64 (6), 2579-2586, 2017 | 13 | 2017 |
| Dv/Dt-Control of 1200-V Normally-off SiC-JFET/GaN-HEMT Cascode Device G Lyu, Y Wang, J Wei, Z Zheng, KJ Chen IEEE Transactions on Power Electronics 36 (3), 3312-3322, 2020 | 12 | 2020 |
| Design of a 1200-V ultra-thin partial SOI LDMOS with n-type buried layer M Qiao, Y Wang, Y Li, B Zhang, Z Li Superlattices and Microstructures 75, 796-805, 2014 | 11 | 2014 |
| Design of a novel triple reduced surface field LDMOS with partial linear variable doping n-type top layer M Qiao, C Li, Y Liu, Y Wang, Z Li, B Zhang Superlattices and Microstructures 93, 242-247, 2016 | 10 | 2016 |
| Design of a 700 V DB-nLDMOS based on substrate termination technology M Qiao, L Yu, G Dai, K Ye, Y Wang, Z Li, B Zhang IEEE Transactions on Electron Devices 62 (12), 4121-4127, 2015 | 10 | 2015 |
| A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor Y Wang, G Lyu, J Wei, Z Zheng, J Lei, W Song, L Zhang, M Hua, KJ Chen Applied Physics Express 12 (10), 106505, 2019 | 9 | 2019 |
Jin WeiPeking UniversityVerified email at pku.edu.cn
