Phase change memory technology GW Burr, MJ Breitwisch, M Franceschini, D Garetto, K Gopalakrishnan, ... Journal of Vacuum Science & Technology B 28 (2), 223-262, 2010 | 1231 | 2010 |
Phase-change random access memory: A scalable technology S Raoux, GW Burr, MJ Breitwisch, CT Rettner, YC Chen, RM Shelby, ... IBM Journal of Research and Development 52 (4.5), 465-479, 2008 | 1189 | 2008 |
Overview of candidate device technologies for storage-class memory GW Burr, BN Kurdi, JC Scott, CH Lam, K Gopalakrishnan, RS Shenoy IBM Journal of Research and Development 52 (4.5), 449-464, 2008 | 1124 | 2008 |
Recent progress in phase-change memory technology GW Burr, MJ Brightsky, A Sebastian, HY Cheng, JY Wu, S Kim, NE Sosa, ... IEEE Journal on Emerging and Selected Topics in Circuits and Systems 6 (2 …, 2016 | 390 | 2016 |
Write strategies for 2 and 4-bit multi-level phase-change memory T Nirschl, JB Philipp, TD Happ, GW Burr, B Rajendran, MH Lee, A Schrott, ... 2007 IEEE International Electron Devices Meeting, 461-464, 2007 | 351 | 2007 |
Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array SB Eryilmaz, D Kuzum, R Jeyasingh, SB Kim, M BrightSky, C Lam, ... Frontiers in neuroscience 8, 205, 2014 | 226 | 2014 |
NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning S Kim, M Ishii, S Lewis, T Perri, M BrightSky, W Kim, R Jordan, GW Burr, ... 2015 IEEE international electron devices meeting (IEDM), 17.1. 1-17.1. 4, 2015 | 195 | 2015 |
Nanoscale electronic synapses using phase change devices BL Jackson, B Rajendran, GS Corrado, M Breitwisch, GW Burr, R Cheek, ... ACM Journal on Emerging Technologies in Computing Systems (JETC) 9 (2), 1-20, 2013 | 190 | 2013 |
Drift-tolerant multilevel phase-change memory N Papandreou, H Pozidis, T Mittelholzer, GF Close, M Breitwisch, C Lam, ... 2011 3rd IEEE International Memory Workshop (IMW), 1-4, 2011 | 165 | 2011 |
Programming algorithms for multilevel phase-change memory N Papandreou, H Pozidis, A Pantazi, A Sebastian, M Breitwisch, C Lam, ... 2011 IEEE International Symposium of Circuits and Systems (ISCAS), 329-332, 2011 | 135 | 2011 |
A high performance phase change memory with fast switching speed and high temperature retention by engineering the GexSbyTez phase change material HY Cheng, TH Hsu, S Raoux, JY Wu, PY Du, M Breitwisch, Y Zhu, EK Lai, ... 2011 International Electron Devices Meeting, 3.4. 1-3.4. 4, 2011 | 106 | 2011 |
Transition-metal-oxide-based resistance-change memories SF Karg, GI Meijer, JG Bednorz, CT Rettner, AG Schrott, EA Joseph, ... IBM Journal of Research and Development 52 (4.5), 481-492, 2008 | 102 | 2008 |
Self‐healing of a confined phase change memory device with a metallic surfactant layer Y Xie, W Kim, Y Kim, S Kim, J Gonsalves, M BrightSky, C Lam, Y Zhu, ... Advanced Materials 30 (9), 1705587, 2018 | 91 | 2018 |
ALD-based confined PCM with a metallic liner toward unlimited endurance W Kim, M BrightSky, T Masuda, N Sosa, S Kim, R Bruce, F Carta, ... 2016 IEEE International Electron Devices Meeting (IEDM), 4.2. 1-4.2. 4, 2016 | 84 | 2016 |
0.18 um modular triple self-aligned embedded split-gate flash memory R Mih, J Harrington, K Houlihan, HK Lee, K Chan, J Johnson, B Chen, ... 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2000 | 80 | 2000 |
Device, circuit and system-level analysis of noise in multi-bit phase-change memory GF Close, U Frey, M Breitwisch, HL Lung, C Lam, C Hagleitner, ... 2010 International Electron Devices Meeting, 29.5. 1-29.5. 4, 2010 | 78 | 2010 |
Technologies for exascale systems PW Coteus, JU Knickerbocker, CH Lam, YA Vlasov IBM Journal of Research and Development 55 (5), 14: 1-14: 12, 2011 | 76 | 2011 |
High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift F Dirisaglik, G Bakan, Z Jurado, S Muneer, M Akbulut, J Rarey, L Sullivan, ... Nanoscale 7 (40), 16625-16630, 2015 | 75 | 2015 |
Extracting the temperature distribution on a phase-change memory cell during crystallization G Bakan, B Gerislioglu, F Dirisaglik, Z Jurado, L Sullivan, A Dana, C Lam, ... Journal of Applied Physics 120 (16), 2016 | 71 | 2016 |
Multilevel phase-change memory N Papandreou, A Pantazi, A Sebastian, M Breitwisch, C Lam, H Pozidis, ... 2010 17th IEEE International Conference on Electronics, Circuits and Systems …, 2010 | 69 | 2010 |