| A Rigorous Investigation of Electrostatic and Transport Phenomena of GaN Double-Channel HEMT IKMR Rahman, MI Khan, QDM Khosru IEEE Transactions on Electron Devices 66 (7), 2923-2931, 2019 | 13 | 2019 |
| Surface Potential-Based Analytical Modeling of Electrostatic and Transport Phenomena of GaN Nanowire Junctionless MOSFET MI Khan, IKMR Rahman, QDM Khosru IEEE Transactions on Electron Devices 67 (9), 3568-3576, 2020 | 12 | 2020 |
| Analytical Modeling of Electrostatic Characteristics of Enhancement Mode GaN Double Channel HEMT IKMR Rahman, MI Khan, M Mahdia, QDM Khosru 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC), 1-4, 2018 | 10 | 2018 |
| Analytical drain current and performance evaluation for inversion type InGaAs gate-all-around MOSFET IKMR Rahman, MI Khan, QDM Khosru AIP Advances 11 (6), 065108, 2021 | 3 | 2021 |
| Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy GA Alvarez, J Casamento, L van Deurzen, MI Khan, K Khan, E Jeong, ... Materials Research Letters 11 (12), 1048-1054, 2023 | 2 | 2023 |
| Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3 X Xia, JS Li, Z Wen, K Khan, MI Khan, E Ahmadi, Y Oshima, DC Hays, ... Journal of Vacuum Science & Technology A 41 (2), 023205, 2023 | 2 | 2023 |
| Band alignment of sputtered and atomic layer deposited SiO2 and Al2O3 on ScAlN X Xia, JS Li, MI Khan, K Khan, E Ahmadi, DC Hays, F Ren, SJ Pearton Journal of Applied Physics 132 (23), 235701, 2022 | 2 | 2022 |
| Electrostatic characterization and threshold voltage modeling of inversion type InGaAs gate-all-around MOSFET IKMR Rahman, MI Khan, QDM Khosru Journal of Computational Electronics, 1-9, 2021 | 1 | 2021 |
| Demonstration of controllable Si doping in N-polar AlN using plasma-assisted molecular beam epitaxy MI Khan, C Lee, E Ahmadi Applied Physics Letters 124 (6), 2024 | | 2024 |
| Demonstration of 82% relaxed In0.18Ga0.82N on porous GaN pseudo-substrate by plasma-assisted molecular Beam Epitaxy K Khan, C Wurm, H Collins, V Muthuraj, MI Khan, C Lee, S Keller, ... Physica Scripta, 2023 | | 2023 |
| Surface Potential Based Analytical Modeling of Electrostatic and Transport Characteristics of GaN Junctionless Nanowire MOSFET MI Khan Department of Electrical and Electronic Engineering,(EEE), 2020 | | 2020 |
| Analytical Modeling of Capacitance-Voltage Characteristics of GaN Nanowire Junctionless MOSFET MI Khan, IKMR Rahman, QDM Khosru 2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO), 67-72, 2020 | | 2020 |
