Infrared and Raman spectra of the IV-VI compounds SnS and SnSe HR Chandrasekhar, RG Humphreys, U Zwick, M Cardona Physical Review B 15 (4), 2177, 1977 | 582 | 1977 |
Optical and structural properties of ZnO films deposited on GaAs by pulsed laser deposition YR Ryu, S Zhu, JD Budai, HR Chandrasekhar, PF Miceli, HW White Journal of Applied Physics 88 (1), 201-204, 2000 | 326 | 2000 |
High-pressure studies of GaAs-As quantum wells of widths 26 to 150 Å U Venkateswaran, M Chandrasekhar, HR Chandrasekhar, BA Vojak, ... Physical Review B 33 (12), 8416, 1986 | 197 | 1986 |
Temperature-dependent photoluminescence of organic semiconductors with varying backbone conformation S Guha, JD Rice, YT Yau, CM Martin, M Chandrasekhar, ... Physical Review B 67 (12), 125204, 2003 | 150* | 2003 |
Planarity of para Hexaphenyl S Guha, W Graupner, R Resel, M Chandrasekhar, HR Chandrasekhar, ... Physical review letters 82 (18), 3625, 1999 | 124 | 1999 |
Study of the localized vibrations of boron in heavily doped Si M Chandrasekhar, HR Chandrasekhar, M Grimsditch, M Cardona Physical Review B 22 (10), 4825, 1980 | 104 | 1980 |
Determination of the deformation-potential constant of the conduction band of silicon from the piezospectroscopy of donors VJ Tekippe, HR Chandrasekhar, P Fisher, AK Ramdas Physical Review B 6 (6), 2348, 1972 | 103 | 1972 |
Nonparabolicity of the conduction band and the coupled plasmon-phonon modes in n-GaAs HR Chandrasekhar, AK Ramdas Physical Review B 21 (4), 1511, 1980 | 99 | 1980 |
Pressure tuning of strains in semiconductor heterostructures:(ZnSe epilayer)/(GaAs epilayer) B Rockwell, HR Chandrasekhar, M Chandrasekhar, AK Ramdas, ... Physical Review B 44 (20), 11307, 1991 | 78 | 1991 |
Raman scattering and infrared reflectivity in GeSe HR Chandrasekhar, U Zwick Solid State Communications 18 (11-12), 1509-1513, 1976 | 75 | 1976 |
Photoluminescence studies of a GaAs-As superlattice at 8–300 K under hydrostatic pressure (0–70 kbar) U Venkateswaran, M Chandrasekhar, HR Chandrasekhar, T Wolfram, ... Physical Review B 31 (6), 4106, 1985 | 73 | 1985 |
Luminescence and Raman spectra of CdS under hydrostatic pressure U Venkateswaran, M Chandrasekhar, HR Chandrasekhar Physical Review B 30 (6), 3316, 1984 | 67 | 1984 |
Quantitative piezospectroscopy of the ground and excited states of acceptors in silicon HR Chandrasekhar, P Fisher, AK Ramdas, S Rodriguez Physical Review B 8 (8), 3836, 1973 | 67 | 1973 |
Infrared and Raman spectra and lattice dynamics of the superionic conductor Li 3 N HR Chandrasekhar, G Bhattacharya, R Migoni, H Bilz Physical Review B 17 (2), 884, 1978 | 56 | 1978 |
Long-wavelength phonons in mixed-valence semiconductor Sn II Sn IV S 3 HR Chandrasekhar, DG Mead Physical Review B 19 (2), 932, 1979 | 55 | 1979 |
Primary optical excitations and excited-state interaction energies in sexithiophene MA Loi, C Martin, HR Chandrasekhar, M Chandrasekhar, W Graupner, ... Physical Review B 66 (11), 113102, 2002 | 54 | 2002 |
Tuning Intermolecular Interactions: A Study of the Structural and Vibrational Properties of p-Hexaphenyl under Pressure S Guha, W Graupner, R Resel, M Chandrasekhar, HR Chandrasekhar, ... The Journal of Physical Chemistry A 105 (25), 6203-6211, 2001 | 52 | 2001 |
Pressure dependence of the Raman spectra of the IV-VI layer compounds GeS and GeSe HR Chandrasekhar, RG Humphreys, M Cardona Physical Review B 16 (6), 2981, 1977 | 49 | 1977 |
Geometry-dependent electronic properties of highly fluorescent conjugated molecules SC Yang, W Graupner, S Guha, P Puschnig, C Martin, HR Chandrasekhar, ... Physical review letters 85 (11), 2388, 2000 | 48 | 2000 |
Photoluminescence of short-period GaAs/AlAs superlattices: A hydrostatic pressure and temperature study S Guha, Q Cai, M Chandrasekhar, HR Chandrasekhar, H Kim, ... Physical Review B 58 (11), 7222, 1998 | 45 | 1998 |