Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer S Choi, HJ Kim, SS Kim, J Liu, J Kim, JH Ryou, RD Dupuis, AM Fischer, ...
Applied Physics Letters 96 (22), 2010
245 2010 Rethinking phonons: The issue of disorder HR Seyf, L Yates, TL Bougher, S Graham, BA Cola, T Detchprohm, MH Ji, ...
npj Computational Materials 3 (1), 49, 2017
101 2017 Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers S Choi, MH Ji, J Kim, H Jin Kim, MM Satter, PD Yoder, JH Ryou, ...
Applied Physics Letters 101 (16), 2012
96 2012 Green light-emitting diodes with self-assembled In-rich InGaN quantum dots IK Park, MK Kwon, J Kim, SB Seo, JY Kim, JH Lim, SJ Park, YS Kim
Applied Physics Letters 91 (13), 133105, 2007
82 2007 Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions J Kim, Z Lochner, MH Ji, S Choi, HJ Kim, JS Kim, RD Dupuis, AM Fischer, ...
Journal of Crystal Growth 388, 143-149, 2014
66 2014 Thermal characterization of gallium nitride pin diodes J Dallas, G Pavlidis, B Chatterjee, JS Lundh, M Ji, J Kim, T Kao, ...
Applied Physics Letters 112 (7), 2018
59 2018 Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating S Choi, HJ Kim, Z Lochner, J Kim, RD Dupuis, AM Fischer, R Juday, ...
Journal of Crystal Growth 388, 137-142, 2014
59 2014 Alx 1−x N Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than J Kim, MH Ji, T Detchprohm, JH Ryou, RD Dupuis, AK Sood, NK Dhar
IEEE Photonics Technology Letters 27 (6), 642-645, 2015
42 2015 Enhanced Carrier Confinement in AlInGaN–InGaN Quantum Wells in Near Ultraviolet Light-Emitting Diodes SH Baek, J Kim, MK Kwon, IK Park, SI Na, JY Kim, B Kim, SJ Park
IEEE PHOTONICS TECHNOLOGY LETTERS 18 (11), 1276, 2006
39 2006 Backlight assembly and display device having the same J Kim, G Kim, S Park, E Kang, S Kang, Y Kwon
US Patent US7815330B2, 2010
36 * 2010 Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays MH Ji, J Kim, T Detchprohm, RD Dupuis, AK Sood, NK Dhar, J Lewis
IEEE Photonics Technology Letters 28 (19), 2015-2018, 2016
32 2016 Gradient Doping of Mg in p-Type GaN for High Efficiency InGaN–GaN Ultraviolet Light-Emitting Diode MK Kwon, IK Park, JY Kim, J Kim, B Kim, SJ Park
IEEE PHOTONICS TECHNOLOGY LETTERS 19 (23), 1880, 2007
31 2007 Backlight assembly, display apparatus having the same and method for manufacturing the same SW Kang, KIM Jeomoh, E Kang, K Jeom-Oh, K Eun-Jeong
US Patent App. 12/043,318, 2008
30 2008 Comparison of AlGaN p-i-n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates J Kim, MH Ji, T Detchprohm, RD Dupuis, JH Ryou, AK Sood, ND Dhar, ...
Applied Physics Express 8, 122202, 2015
29 2015 GaN/InGaN avalanche phototransistors SC Shen, TT Kao, HJ Kim, YC Lee, J Kim, MH Ji, JH Ryou, T Detchprohm, ...
Applied Physics Express 8 (3), 032101, 2015
26 2015 Temperature-dependent characteristics of GaN homojunction rectifiers TT Kao, J Kim, YC Lee, AFMS Haq, MH Ji, T Detchprohm, RD Dupuis, ...
IEEE Transactions on Electron Devices 62 (8), 2679-2683, 2015
23 2015 Pipin separate absorption and multiplication ultraviolet avalanche photodiodes MH Ji, J Kim, T Detchprohm, Y Zhu, SC Shen, RD Dupuis
IEEE Photonics Technology Letters 30 (2), 181-184, 2017
21 2017 High-responsivity GaN/InGaN heterojunction phototransistors TT Kao, J Kim, T Detchprohm, RD Dupuis, SC Shen
IEEE Photonics Technology Letters 28 (19), 2035-2038, 2016
21 2016 Temperature-dependent resonance energy transfer from semiconductor quantum wells to graphene YJ Yu, KS Kim, J Nam, SR Kwon, H Byun, K Lee, JH Ryou, RD Dupuis, ...
Nano Letters 15 (2), 896-902, 2015
18 2015 Backlight unit assembly and liquid crystal display having the same EC Jeon, SJ Song, KIM Jeomoh, K Jeom-Oh
US Patent App. 12/276,018, 2008
17 2008 