| 0.34AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal HS Lee, DY Jung, Y Park, J Na, HG Jang, HS Lee, CH Jun, J Park, ... IEEE Electron Device Letters 36 (11), 1132-1134, 2015 | 51 | 2015 |
| Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices Y Zhang, Z Chen, W Li, H Lee, MR Karim, AR Arehart, SA Ringel, S Rajan, ... Journal of Applied Physics 127 (21), 2020 | 31 | 2020 |
| Design and fabrication of vertical GaN pn diode with step-etched triple-zone junction termination extension HS Lee, Y Zhang, Z Chen, MW Rahman, H Zhao, S Rajan IEEE Transactions on Electron Devices 67 (9), 3553-3557, 2020 | 25 | 2020 |
| Low onset voltage of GaN on Si Schottky barrier diode using various recess depths Y Park, JJ Kim, W Chang, HG Jang, J Na, H Lee, CH Jun, H Cha, JK Mun, ... Electronics letters 50 (16), 1164-1165, 2014 | 22 | 2014 |
| Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors MW Rahman, NK Kalarickal, H Lee, T Razzak, S Rajan Applied Physics Letters 119 (19), 2021 | 21 | 2021 |
| Design and evaluation of cascode GaN FET for switching power conversion systems DY Jung, Y Park, HS Lee, CH Jun, HG Jang, J Park, M Kim, SC Ko, ... ETRI Journal 39 (1), 62-68, 2017 | 16 | 2017 |
| High-permittivity dielectric edge termination for vertical high voltage devices HS Lee, NK Kalarickal, MW Rahman, Z Xia, W Moore, C Wang, S Rajan Journal of Computational Electronics 19, 1538-1545, 2020 | 14 | 2020 |
| Hybrid BaTiO3/SiNx/AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance MW Rahman, H Chandrasekar, T Razzak, H Lee, S Rajan Applied Physics Letters 119 (1), 2021 | 12 | 2021 |
| Power semiconductor SMD package embedded in multilayered ceramic for low switching loss DY Jung, HG Jang, M Kim, CH Jun, J Park, HS Lee, JM Park, SC Ko ETRI Journal 39 (6), 866-873, 2017 | 11 | 2017 |
| 48-to-5/12 V dual output DC/DC converter for high efficiency and small form factor in electric bike applications DY Jung, HG Jang, M Kim, J Park, HS Lee, CH Jun, SC Ko, SH Son, ... 2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium …, 2017 | 8 | 2017 |
| Power semiconductor module and method for stabilizing thereof M Kim, J Hyun-Gyu, DY Jung, SC Ko, HS Lee, CH Jun US Patent 9,748,941, 2017 | 4 | 2017 |
| Semiconductor device and method of manufacturing the same DY Jung, HS Lee, SC KO, JJ Kim, KIM Zin-Sig, NA Jeho, ES Nam, JK Mun, ... US Patent App. 15/084,874, 2016 | 2 | 2016 |
| Low leakage current AlGaN/GaN on Si-based Schottky barrier diode with bonding-pad electrode mesa etching HG Jang, J Na, JJ Kim, YR Park, HS Lee, DY Jung, JK Mun, SC Ko, ... Japanese Journal of Applied Physics 54 (7), 070302, 2015 | 2 | 2015 |
| Al2O3 surface passivation and MOS-gate fabrication on AlGaN/GaN high-electron-mobility transistors without Al2O3 etching process JJ Kim, YR Park, HG Jang, JH Na, HS Lee, SC Ko, DY Jung, HS Lee, ... Japanese Journal of Applied Physics 54 (3), 038003, 2015 | 2 | 2015 |
| Selectively patterned Mg-doped GaN by SiNx-driven hydrogen injection HS Lee, MW Rahman, D Verma, VM Poole, RC Myers, MD McCluskey, ... Journal of Vacuum Science & Technology B 40 (6), 2022 | 1 | 2022 |
| Demonstration of BaTiO3 Integrated kV-class AlGaN/GaN Schottky Barrier Diodes with Record Average Breakdown Electric Field MW Rahman, C Joishi, NK Kalarickal, H Lee, S Rajan 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 1 | 2022 |
| Bridge diode DY Jung, HS Lee, SC Ko, M Kim, NA Jeho, ES Nam, YR Park, P Junbo, ... US Patent 9,905,654, 2018 | 1 | 2018 |
| Hybrid diode device CH Jun, SC Ko, M Kim, NA Jeho, YR Park, P Junbo, HS Lee, HS Lee, ... US Patent 9,800,181, 2017 | 1 | 2017 |
| Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure HS Lee, DY Jung, Y Park, HG Jang, HS Lee, CH Jun, J Park, JK Mun, ... JSTS: Journal of Semiconductor Technology and Science 17 (3), 354-362, 2017 | 1 | 2017 |
| Engineering Lateral Electric Field and Carrier Profile for GaN-based Power Devices H Lee The Ohio State University, 2023 | | 2023 |
Youngrak ParkGeorgia Institute of Technologygatech.edu의 이메일 확인됨
