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Mona A. Ebrish
Mona A. Ebrish
US Naval Research Laboratory
Verified email at umn.edu - Homepage
Title
Cited by
Cited by
Year
High acceptor level doping in silicon germanium
MA Ebrish, O Gluschenkov, S Mochizuki, A Reznicek
US Patent 9,799,736, 2017
3002017
SnSe2 field-effect transistors with high drive current
Y Su, MA Ebrish, EJ Olson, SJ Koester
Applied Physics Letters 103 (26), 2013
1202013
Graphene-based quantum capacitance wireless vapor sensors
DA Deen, EJ Olson, MA Ebrish, SJ Koester
IEEE Sensors Journal 14 (5), 1459-1466, 2013
622013
Capacitive Sensing of Intercalated H2O Molecules Using Graphene
EJ Olson, R Ma, T Sun, MA Ebrish, N Haratipour, K Min, NR Aluru, ...
ACS applied materials & interfaces 7 (46), 25804-25812, 2015
512015
Operation of multi-finger graphene quantum capacitance varactors using planarized local bottom gate electrodes
MA Ebrish, H Shao, SJ Koester
Applied Physics Letters 100 (14), 2012
432012
Effect of noncovalent basal plane functionalization on the quantum capacitance in graphene
MA Ebrish, EJ Olson, SJ Koester
ACS Applied Materials & Interfaces 6 (13), 10296-10303, 2014
372014
Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates
MJ Tadjer, F Alema, A Osinsky, MA Mastro, N Nepal, JM Woodward, ...
Journal of Physics D: Applied Physics 54 (3), 034005, 2020
292020
p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing
V Meyers, E Rocco, TJ Anderson, JC Gallagher, MA Ebrish, K Jones, ...
Journal of Applied Physics 128 (8), 2020
222020
Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments
GM Foster, A Koehler, M Ebrish, J Gallagher, T Anderson, B Noesges, ...
Applied Physics Letters 117 (8), 2020
182020
Dielectric thickness dependence of quantum capacitance in graphene varactors with local metal back gates
MA Ebrish, SJ Koester
70th Device Research Conference, 105-106, 2012
152012
A simple edge termination design for vertical GaN PN diodes
P Pandey, TM Nelson, WM Collings, MR Hontz, DG Georgiev, AD Koehler, ...
IEEE Transactions on Electron Devices 69 (9), 5096-5103, 2022
142022
Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques
JC Gallagher, MA Ebrish, MA Porter, AG Jacobs, BP Gunning, RJ Kaplar, ...
Scientific Reports 12 (1), 658, 2022
142022
Delta-doped β-(AlxGa1− x) 2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy
MJ Tadjer, K Sasaki, D Wakimoto, TJ Anderson, MA Mastro, JC Gallagher, ...
Journal of Vacuum Science & Technology A 39 (3), 2021
132021
Border trap characterization in metal-oxide-graphene capacitors with HfO2 dielectrics
MA Ebrish, DA Deen, SJ Koester
71st Device Research Conference, 37-38, 2013
132013
Effect of GaN substrate properties on vertical GaN PiN diode electrical performance
JC Gallagher, TJ Anderson, AD Koehler, MA Ebrish, GM Foster, ...
Journal of Electronic Materials 50, 3013-3021, 2021
122021
Nanosheet substrate to source/drain isolation
FL Lie, M Ebrish, EA De Silva, I Seshadri, G Karve, LA Clevenger, ...
US Patent 10,734,523, 2020
122020
12.5 kV GaN super-heterojunction Schottky barrier diodes
SW Han, J Song, M Sadek, A Molina, MA Ebrish, SE Mohney, ...
IEEE Transactions on Electron Devices 68 (11), 5736-5741, 2021
102021
Development of high-voltage vertical GaN PN diodes
RJ Kaplar, BP Gunning, AA Allerman, MH Crawford, JD Flicker, ...
2020 IEEE International Electron Devices Meeting (IEDM), 5.1. 1-5.1. 4, 2020
92020
Impact of anode thickness on breakdown mechanisms in vertical GaN PiN diodes with planar edge termination
MA Ebrish, MA Porter, AG Jacobs, JC Gallagher, RJ Kaplar, BP Gunning, ...
Crystals 12 (5), 623, 2022
72022
Liquid drop emitter
M Noritake, T Hirota, T Ohnishi
US Patent 7,261,862, 2007
62007
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