Insight into physics-based RRAM models–review AL Jagath, CH Leong, TN Kumar, HAF Almurib The Journal of Engineering 2019 (7), 4644-4652, 2019 | 28 | 2019 |
Modeling of current conduction during RESET phase of Pt/Ta2O5/TaOx/Pt bipolar resistive RAM devices AL Jagath, TN Kumar, HAF Almurib 2018 IEEE 7th Non-Volatile Memory Systems and Applications Symposium (NVMSA …, 2018 | 14 | 2018 |
The effect of the top electrode on the switching behavior of bipolar Al2O3/ZnO RRAM KB Jinesh Microelectronic Engineering 250, 111637, 2021 | 12 | 2021 |
Multilevel non‐volatile memory based on Al2O3/ZnO bilayer device J Arya Lekshmi, T Nandha Kumar, K Jinesh Micro & Nano Letters 15 (13), 910-914, 2020 | 10 | 2020 |
Analytical modelling of tantalum/titanium oxide‐based multi‐layer selector to eliminate sneak path current in RRAM arrays A Lekshmi Jagath, TN Kumar, HA Almurib, KBP Jinesh IET Circuits, Devices & Systems 14 (7), 1092-1098, 2020 | 8 | 2020 |
A comparative study on the performance of 1S-1R and Complementary resistive switching models AL Jagath, TN Kumar 2020 IEEE International Conference on Semiconductor Electronics (ICSE), 9-12, 2020 | 8 | 2020 |
Dynamic voltage scaling for power consumption reduction in real-time mixed task model AL Mohan, AS Pillai Int. conference on Computer Science Engineering and Applications, 2011 | 5 | 2011 |
Electrical model of Ta2O5/TaOx RRAM device with current conduction beyond RESET phase AL Jagath, TN Kumar, HAF Almurib 2019 IEEE 9th International Nanoelectronics Conferences (INEC), 1-5, 2019 | 4 | 2019 |
Dynamic Voltage Scaling With Reduced Frequency Switching And Preemptions AS Arya lekshmi International Journal of Electronics and Electical Engineering 1 (1), 10-14, 2012 | 4* | 2012 |
Effect of sneak path current in TiOx/HfOx based 1S1R RRAM crossbar memory array AN Youssef, AL Jagath, NK Thulasiraman, HAF Almurib 2021 IEEE 19th Student Conference on Research and Development (SCOReD), 267-272, 2021 | 2 | 2021 |
Complementary Resistive Switching in ZnO/Al2O3 Bi-Layer Devices JA Lekshmi, TN Kumar, KB Jinesh IEEE Transactions on Nanotechnology 22, 206-213, 2023 | 1 | 2023 |
FPGA Implementation of Low Complexity Video Encoder using Optimized 3D-DCT ALM Rajalekshmi R International Journal of Engineering Research and Technology 4 (07), 2015 | 1 | 2015 |
A 1Mb RRAM Macro With 9.8 ns Read Access Time Utilizing Dynamic Reference Voltage for Reliable Sensing Operation J Mu, L Lu, JE Kim, B An, V Sharma, AJ Lekshmi, PA Dananjaya, WH Lai, ... IEEE Transactions on Circuits and Systems II: Express Briefs, 2024 | | 2024 |
Al2O3 bi-layer devices NK Thulasiraman, JA Lekshmi, KB Jinesh Authorea Preprints, 2023 | | 2023 |
Electrical Modeling of One Selector-One Resistor (1S-1R) for Mitigating the Sneak-Path Current in a Nano-Crossbar Array JA Lekshmi, TN Kumar, AF Haider, KB Jinesh Nanoelectronics for Next-Generation Integrated Circuits, 147-174, 2022 | | 2022 |
Self-limited Bipolar Au/ Al2O3/ZnO/FTO RRAM and its comparison with Ag/ Al2O3/ZnO/FTO devices KBJ Arya Lekshmi, T. N. Kumar Elsevier's Microelectronic Engineering 250 (111637), ISSN 0167-9317, 2021 | | 2021 |
Implementation of sub-filamentary network-based variability model for Ta2O5/TaOx RRAM JA Lekshmi, TN Kumar, AF Haider, KB Jinesh 2021 IEEE 21st International Conference on Nanotechnology (NANO), 366-369, 2021 | | 2021 |
Self-rectifying self-limited Resistive switching in Au/Al2O3/FTO Devices JA Lekshmi, TN Kumar, AF Haider, KB Jinesh 2021 IEEE 21st International Conference on Nanotechnology (NANO), 17-20, 2021 | | 2021 |
Dynamic Voltage Scaling with Reduced Frequency Switching and Preemptions ASP Arya Lekshmi Mohan International Conference on Computer Science and Information Technology …, 2011 | | 2011 |