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Title
Cited by
Cited by
Year
AlGaN metal–semiconductor–metal photodiodes
E Monroy, F Calle, E Munoz, F Omnes
Applied Physics Letters 74 (22), 3401-3403, 1999
1871999
Analysis and modeling of -based Schottky barrier photodiodes
E Monroy, F Calle, JL Pau, FJ Sanchez, E Munoz, F Omnes, B Beaumont, ...
Journal of Applied Physics 88 (4), 2081-2091, 2000
1422000
Schottky barrier photodiodes with fast response and high detectivity
E Monroy, F Calle, E Munoz, F Omnes, P Gibart, JA Munoz
Applied physics letters 73 (15), 2146-2148, 1998
1231998
Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis
JA Garrido, JL Sanchez-Rojas, A Jimenez, E Munoz, F Omnes, P Gibart
Applied physics letters 75 (16), 2407-2409, 1999
951999
Nanoindentation on AlGaN thin films
D Caceres, I Vergara, R Gonzalez, E Monroy, F Calle, E Munoz, F Omnes
Journal of Applied Physics 86 (12), 6773-6778, 1999
781999
Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements
AF Brana, C Diaz-Paniagua, F Batallan, JA Garrido, E Munoz, F Omnes
Journal of Applied Physics 88 (2), 932-937, 2000
752000
Visible-blindness in photoconductive and photovoltaic AlGaN ultraviolet detectors
E Monroy, F Calle, E Muñoz, F Omnès, B Beaumont, P Gibart
Journal of electronic materials 28, 240-245, 1999
691999
Diamond UV detectors for future solar physics missions
JF Hochedez, P Bergonzo, MC Castex, P Dhez, O Hainaut, M Sacchi, ...
Diamond and Related Materials 10 (3-7), 673-680, 2001
612001
Si-doped AlxGa1-xN photoconductive detectors
E Monroy, F Calle, JA Garrido, P Youinou, E Munoz, F Omnès, ...
Semiconductor science and technology 14 (8), 685, 1999
551999
Properties of a hole trap in n-type hexagonal GaN
P Muret, A Philippe, E Monroy, E Munoz, B Beaumont, F Omnes, P Gibart
Journal of applied physics 91 (5), 2998-3001, 2002
522002
GaN-based solar-ultraviolet detection instrument
E Monroy, F Calle, C Angulo, P Vila, A Sanz, JA Garrido, E Calleja, ...
Applied optics 37 (22), 5058-5062, 1998
501998
Effects of bias on the responsivity of GaN metal–semiconductor–metal photodiodes
E Monroy, F Calle, E Munoz, F Omnes
physica status solidi (a) 176 (1), 157-161, 1999
481999
High UV/visible contrast photodiodes based on epitaxial lateral overgrown GaN layers
E Monroy, F Calle, E Muñoz, B Beaumont, F Omnes, P Gibart
Electronics Letters 35 (17), 1488-1489, 1999
431999
AlGaN photodiodes for monitoring solar UV radiation
E Muñoz, E Monroy, F Calle, F Omnès, P Gibart
Journal of Geophysical Research: Atmospheres 105 (D4), 4865-4871, 2000
342000
Application and performance of GaN based UV detectors
E Monroy, F Calle, JL Pau, E Munoz, F Omnes, B Beaumont, P Gibart
physica status solidi (a) 185 (1), 91-97, 2001
312001
Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications
F Omnes, N Marenco, B Beaumont, P De Mierry, E Monroy, F Calle, ...
Journal of applied physics 86 (9), 5286-5292, 1999
301999
New UV detectors for solar observations
JFE Hochedez, UH Schuehle, JL Pau, J Alvarez, O Hainaut, ...
Innovative telescopes and instrumentation for solar astrophysics 4853, 419-426, 2003
292003
Recent progresses of the BOLD investigation towards UV detectors for the ESA Solar Orbiter
JF Hochedez, J Alvarez, FD Auret, P Bergonzo, MC Castex, A Deneuville, ...
Diamond and related materials 11 (3-6), 427-432, 2002
292002
Ultraviolet Photodetectors Based on AlxGa1−xN Schottky Barriers
E Monroy, F Calle, E Munoz, F Omnes, B Beaumont, P Gibart, JA Munoz, ...
MRS Internet Journal of Nitride Semiconductor Research 3, 1-4, 1998
261998
Low-noise metal-insulator-semiconductor UV photodiodes based on GaN
E Monroy, F Calle, JL Pau, E Munoz, F Omnes
Electronics Letters 36 (25), 1, 2000
242000
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