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Roozbeh Bonyadi
Roozbeh Bonyadi
Principal Power Electronics Engineer at McLaren Automotive
Verified email at mclaren.com
Title
Cited by
Cited by
Year
Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules
S Jahdi, O Alatise, JAO Gonzalez, R Bonyadi, L Ran, P Mawby
IEEE Transactions on Industrial Electronics 63 (2), 849-863, 2015
1512015
An analysis of the switching performance and robustness of power MOSFETs body diodes: A technology evaluation
S Jahdi, O Alatise, R Bonyadi, P Alexakis, CA Fisher, JAO Gonzalez, ...
IEEE Transactions on Power Electronics 30 (5), 2383-2394, 2014
1092014
Robustness and balancing of parallel-connected power devices: SiC versus CoolMOS
J Hu, O Alatise, JAO Gonzalez, R Bonyadi, P Alexakis, L Ran, P Mawby
IEEE Transactions on Industrial Electronics 63 (4), 2092-2102, 2015
862015
The effect of electrothermal nonuniformities on parallel connected SiC power devices under unclamped and clamped inductive switching
J Hu, O Alatise, JAO Gonzalez, R Bonyadi, L Ran, PA Mawby
IEEE Transactions on Power Electronics 31 (6), 4526-4535, 2015
852015
Compact electrothermal reliability modeling and experimental characterization of bipolar latchup in SiC and CoolMOS power MOSFETs
R Bonyadi, O Alatise, S Jahdi, J Hu, JAO Gonzalez, L Ran, PA Mawby
IEEE Transactions on Power Electronics 30 (12), 6978-6992, 2015
412015
Investigating the reliability of SiC MOSFET body diodes using Fourier series modelling
R Bonyadi, O Alatise, S Jahdi, J Hu, L Evans, PA Mawby
2014 IEEE Energy Conversion Congress and Exposition (ECCE), 443-448, 2014
222014
Physics-based modelling and experimental characterisation of parasitic turn-on in IGBTs
R Bonyadi, O Alatise, S Jahdi, J Ortiz-Gonzalez, Z Davletzhanova, L Ran, ...
2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015
132015
Comparative electrothermal analysis between SiC Schottky and silicon PiN diodes: Paralleling and thermal considerations
J Hu, O Alatise, JAO Gonzalez, R Bonyadi, L Ran, P Mawby
2016 18th European Conference on Power Electronics and Applications (EPE'16 …, 2016
82016
Electrothermal stresses in SiC MOSFET and Si IGBT 3L-NPC converters for motor drive applications
Z Davletzhanova, O Alatise, JO Gonzalez, S Konaklieva, R Bonyadi
PCIM Europe 2017; International Exhibition and Conference for Power …, 2017
52017
Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging
Y Bonyadi, PM Gammon, R Bonyadi, VA Shah, CA Fisher, DM Martin, ...
Materials Science Forum 858, 405-409, 2016
52016
Compact electrothermal models for unbalanced parallel conducting Si-IGBTs
R Bonyadi, O Alatise, J Hu, Z Davletzhanova, Y Bonyadi, J Ortiz-Gonzalez, ...
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 253-260, 2016
52016
Impact of leakage currents on voltage sharing in series connected SiC power MOSFETs and silicon IGBT devices
Z Davletzhanova, O Alatise, R Bonyadi, JO Gonzalez, CW Chan, ...
2018 20th European Conference on Power Electronics and Applications (EPE'18 …, 2018
32018
Modeling of temperature dependent parasitic gate turn-on in silicon IGBTs
R Bonyadi, O Alatise, S Jahdi, JO Gonzalez, L Ran, PA Mawby
2015 9th International Conference on Power Electronics and ECCE Asia (ICPE …, 2015
32015
Safe-operating-area of snubberless series connected silicon and SiC power devices
Z Davletzhanova, T Dai, O Alatise, JO Gonzalez, P Mawby, R Bonyadi, ...
2018 IEEE Energy Conversion Congress and Exposition (ECCE), 1875-1881, 2018
22018
The impact of triangular defects on electrical characteristics and switching performance of 3.3 kV 4H-SiC PiN diode
Y Bonyadi, P Gammon, R Bonyadi, O Alatise, J Hu, S Hindmarsh, ...
2016 IEEE Energy Conversion Congress and Exposition (ECCE), 1-5, 2016
22016
Reliability assessment and modelling of power electronic devices for automotive application and design.
R Bonyadi
University of Warwick, 2016
22016
Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment
Y Bonyadi, PM Gammon, O Alatise, R Bonyadi, P Mawby
Materials Science Forum 924, 440-443, 2018
12018
Output harmonic analysis as a potential method of condition monitoring
Z Davletzhanova, O Alatise, JAO Gonzalez, R Bonyadi, L Ran, P Mawby
IET Digital Library, 2016
12016
Characterization of Voltage Divergence in Series Connected SiC Trench MOSFETs and Si IGBTs
Z Davletzhanova, O Alatise, R Bonyadi, JO Gonzalez, T Dai
PCIM Europe 2018; International Exhibition and Conference for Power …, 2018
2018
A Technology Analysis of Voltage Sharing in Series Connected Power Devices
Z Davletzhanova, O Alatise, R Bonyadi, J Ortiz-Gonzalez, T Dai, ...
2018 International Power Electronics Conference (IPEC-Niigata 2018-ECCE Asia …, 2018
2018
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