Two-dimensional p-n junction under equilibrium conditions AS Achoyan, AE Yesayan, EM Kazaryan, SG Petrosyan
Semiconductors 36, 903-907, 2002
65 2002 Physics-based compact model for ultra-scaled FinFETs A Yesayan, F Prégaldiny, N Chevillon, C Lallement, JM Sallese
Solid-State Electronics 62 (1), 165-173, 2011
52 2011 Charge-Based Modeling of Double-Gate and Nanowire Junctionless FETs Including Interface-Trapped Charges FJJMS Ashkhen Yesayan
IEEE Transactions on Electron Devices 63 (3), 1368-1374, 2016
38 2016 Theory of Nanowire Radial pn-Junction S Petrosyan, A Yesayan, S Nersesyan
World Academy of Science, Engineering and Technology 6, 1038-1043, 2012
19 2012 Analytical modeling of double-gate and nanowire junctionless ISFETs A Yesayan, F Jazaeri, JM Sallese
IEEE Transactions on Electron Devices 67 (3), 1157-1164, 2020
17 2020 Explicit drain current model of junctionless double-gate field-effect transistors A Yesayan, F Prégaldiny, JM Sallese
Solid-state electronics 89, 134-138, 2013
17 2013 The linearly graded two-dimensional S Petrosyan, A Yesayan, D Reuter, AD Wieck
Applied physics letters 84 (17), 3313-3315, 2004
14 2004 Surface trap-induced conductivity type switching in semiconductor nanowires: Analytical and numerical analyses A Yesayan, F Prégaldiny, S Petrosyan
IEEE Transactions on Electron Devices 64 (12), 5249-5255, 2017
6 2017 Multiple quantum well photodiode with lateral p–n-junctions VM Aroutionian, SG Petrosyan, AE Yesayan
Thin solid films 451, 389-392, 2004
4 2004 Photocurrent relaxations and gain in semiconductor nanowires S Petrosyan, A Yesayan, S Nersesyan
International Conference on Micro-and Nano-Electronics 2014 9440, 204-212, 2014
3 2014 Critical Radius of Full Depletion in Semiconductor Nanowires Caused by Surface Charge Trapping SG Petrosyan, AE Yesayan, SR Nersesyan, VA Khachatryan
Semiconductors 52, 2022-2025, 2018
2 2018 Conductivity type switching in semiconductor nanowires A Yesayan, S Petrosyan, F Pregaldiny
2016 Joint International EUROSOI Workshop and International Conference on …, 2016
1 2016 TRANSIENT AND STATIONARY PHOTOCONDUCTIVITY OF SEMICONDUCTOR NANOWIRES. SG Petrosyan, S Nersesyan, A Yesayan
Armenian Journal of Physics 6 (2), 2013
1 2013 Compact physics-based model for ultrashort FinFETs A Yesayan, N Chevillon, F Prégaldiny, C Lallement
Proceedings of the 17th International Conference Mixed Design of Integrated …, 2010
1 2010 Sensitivity Analysis of Nanowire FET Biosensor. A Yesayan
Armenian Journal of Physics 15 (4), 2022
2022 Nanowire Array Solar Cells S Petrosyan, V Khachatryan, A Yesayan
2022 IEEE Latin American Electron Devices Conference (LAEDC), 1-4, 2022
2022 Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor A Yesayan, S Petrosyan, A Papiyan, JM Sallese
Journal of Contemporary Physics (Armenian Academy of Sciences) 56, 324-331, 2021
2021 Compact Analytical Model of Nanowire Junctionless ISFET A Yesayan, JM Sallese
2021 28th International Conference on Mixed Design of Integrated Circuits …, 2021
2021 A capacitance model of short channel double-gate finfet including mobility degradation effect AE Yesayan
ՀՀ ԳԱԱ Տեղեկագիր: Տեխնիկական գիտություններ 72 (1), 93-101, 2019
2019 Compact Transcapacitance Model for Short-Channel DG FinFETs. A Yesayan
Armenian Journal of Physics 11 (4), 2018
2018 
Jean-Michel SalleseSenior scientist - Ecole polytechnique Federale de LausanneПодтвержден адрес электронной почты в домене epfl.ch
