| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 576 | 2019 |
| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 149 | 2021 |
| Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching N Xiao, MA Villena, B Yuan, S Chen, B Wang, M Eliáš, Y Shi, F Hui, X Jing, ... Advanced Functional Materials 27 (33), 1700384, 2017 | 85 | 2017 |
| Engineering field effect transistors with 2D semiconducting channels: status and prospects X Jing, Y Illarionov, E Yalon, P Zhou, T Grasser, Y Shi, M Lanza Advanced Functional Materials 30 (18), 1901971, 2020 | 77 | 2020 |
| Variability and Yield in h‐BN‐Based Memristive Circuits: The Role of Each Type of Defect Y Shen, W Zheng, K Zhu, Y Xiao, C Wen, Y Liu, X Jing, M Lanza Advanced Materials 33 (41), 2103656, 2021 | 64 | 2021 |
| Model for multi-filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching devices C Pan, E Miranda, MA Villena, N Xiao, X Jing, X Xie, T Wu, F Hui, Y Shi, ... 2D Materials 4 (2), 025099, 2017 | 64 | 2017 |
| Synthesis of large-area multilayer hexagonal boron nitride sheets on iron substrates and its use in resistive switching devices F Hui, MA Villena, W Fang, AY Lu, J Kong, Y Shi, X Jing, K Zhu, M Lanza 2D Materials 5 (3), 031011, 2018 | 56 | 2018 |
| Dielectric breakdown in chemical vapor deposited hexagonal boron nitride L Jiang, Y Shi, F Hui, K Tang, Q Wu, C Pan, X Jing, H Uppal, F Palumbo, ... ACS applied materials & interfaces 9 (45), 39758-39770, 2017 | 52 | 2017 |
| Chemical vapor deposition of hexagonal boron nitride on metal-coated wafers and transfer-free fabrication of resistive switching devices X Jing, F Puglisi, D Akinwande, M Lanza 2D Materials 6 (3), 035021, 2019 | 33 | 2019 |
| Piezoelectricity in two dimensions: Graphene vs. molybdenum disulfide X Song, F Hui, T Knobloch, B Wang, Z Fan, T Grasser, X Jing, Y Shi, ... Applied Physics Letters 111 (8), 2017 | 33 | 2017 |
| 150 nm× 200 nm cross‐point hexagonal boron nitride‐based memristors B Yuan, X Liang, L Zhong, Y Shi, F Palumbo, S Chen, F Hui, X Jing, ... Advanced Electronic Materials 6 (12), 1900115, 2020 | 30 | 2020 |
| High-resolution characterization of hexagonal boron nitride coatings exposed to aqueous and air oxidative environments L Jiang, N Xiao, B Wang, E Grustan-Gutierrez, X Jing, P Babor, M Kolíbal, ... Nano Research 10, 2046-2055, 2017 | 25 | 2017 |
| Electroforming in metal-oxide memristive synapses T Wang, Y Shi, FM Puglisi, S Chen, K Zhu, Y Zuo, X Li, X Jing, T Han, ... ACS applied materials & interfaces 12 (10), 11806-11814, 2020 | 24 | 2020 |
| Variability of metal/h-BN/metal memristors grown via chemical vapor deposition on different materials MA Villena, F Hui, X Liang, Y Shi, B Yuan, X Jing, K Zhu, S Chen, ... Microelectronics Reliability 102, 113410, 2019 | 21 | 2019 |
| On the limits of scalpel AFM for the 3D electrical characterization of nanomaterials S Chen, L Jiang, M Buckwell, X Jing, Y Ji, E Grustan‐Gutierrez, F Hui, ... Advanced Functional Materials 28 (52), 1802266, 2018 | 21 | 2018 |
| Fabrication of scalable and ultra low power photodetectors with high light/dark current ratios using polycrystalline monolayer MoS2 sheets X Jing, E Panholzer, X Song, E Grustan-Gutierrez, F Hui, Y Shi, ... Nano Energy 30, 494-502, 2016 | 20 | 2016 |
| Graphene coated nanoprobes: A review F Hui, S Chen, X Liang, B Yuan, X Jing, Y Shi, M Lanza Crystals 7 (9), 269, 2017 | 16 | 2017 |
| In situ observation of current generation in ZnO nanowire based nanogenerators using a CAFM integrated into an SEM C Wen, X Jing, FF Hitzel, C Pan, G Benstetter, M Lanza ACS applied materials & interfaces 11 (17), 15183-15188, 2019 | 13 | 2019 |
| Effect of the pressure exerted by probe station tips in the electrical characteristics of memristors Y Zuo, H Lin, J Guo, Y Yuan, H He, Y Li, Y Xiao, X Li, K Zhu, T Wang, ... Advanced Electronic Materials 6 (3), 1901226, 2020 | 12 | 2020 |
| Experimental observation and mitigation of dielectric screening in hexagonal boron nitride based resistive switching devices B Wang, N Xiao, C Pan, Y Shi, F Hui, X Jing, K Zhu, B Guo, MA Villena, ... Crystal Research and Technology 53 (4), 1800006, 2018 | 12 | 2018 |
Mario LanzaIEEE Fellow | Associate Professor at KAUST在 kaust.edu.sa 的电子邮件经过验证
