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Martin Jaraiz
Martin Jaraiz
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Cited by
Year
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
PA Stolk, HJ Gossmann, DJ Eaglesham, DC Jacobson, CS Rafferty, ...
Journal of Applied Physics 81 (9), 6031-6050, 1997
9001997
Energetics of self-interstitial clusters in Si
NEB Cowern, G Mannino, PA Stolk, F Roozeboom, HGA Huizing, ...
Physical Review Letters 82 (22), 4460, 1999
4141999
B diffusion and clustering in ion implanted Si: The role of B cluster precursors
L Pelaz, M Jaraiz, GH Gilmer, HJ Gossmann, CS Rafferty, DJ Eaglesham, ...
Applied physics letters 70 (17), 2285-2287, 1997
2791997
Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena
M Jaraiz, GH Gilmer, JM Poate, TD De La Rubia
Applied physics letters 68 (3), 409-411, 1996
2341996
B cluster formation and dissolution in Si: A scenario based on atomistic modeling
L Pelaz, GH Gilmer, HJ Gossmann, CS Rafferty, M Jaraiz, J Barbolla
Applied physics letters 74 (24), 3657-3659, 1999
2161999
Carbon in silicon: Modeling of diffusion and clustering mechanisms
R Pinacho, P Castrillo, M Jaraiz, I Martin-Bragado, J Barbolla, ...
Journal of Applied Physics 92 (3), 1582-1587, 2002
2152002
Simulation of cluster evaporation and transient enhanced diffusion in silicon
CS Rafferty, GH Gilmer, M Jaraiz, D Eaglesham, HJ Gossmann
Applied physics letters 68 (17), 2395-2397, 1996
2021996
Diffusion and interactions of point defects in silicon: Molecular dynamics simulations
GH Gilmer, TD De La Rubia, DM Stock, M Jaraiz
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995
1921995
Atomistic modeling of point and extended defects in crystalline materials
M Jaraiz, L Pelaz, E Rubio, J Barbolla, GH Gilmer, DJ Eaglesham, ...
MRS Online Proceedings Library (OPL) 532, 43, 1998
951998
Activation and deactivation of implanted B in Si
L Pelaz, VC Venezia, HJ Gossmann, GH Gilmer, AT Fiory, CS Rafferty, ...
Applied physics letters 75 (5), 662-664, 1999
821999
Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the “+ 1” model
L Pelaz, GH Gilmer, M Jaraiz, SB Herner, HJ Gossmann, DJ Eaglesham, ...
Applied physics letters 73 (10), 1421-1423, 1998
751998
Improved binary collision approximation ion implant simulators
JM Hernández-Mangas, J Arias, L Bailón, M Jaraız, J Barbolla
Journal of applied physics 91 (2), 658-667, 2002
682002
Kinetic Monte Carlo simulation for semiconductor processing: A review
I Martin-Bragado, R Borges, JP Balbuena, M Jaraiz
Progress in Materials Science 92, 1-32, 2018
602018
Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion
L Pelaz, GH Gilmer, VC Venezia, HJ Gossmann, M Jaraiz, J Barbolla
Applied physics letters 74 (14), 2017-2019, 1999
561999
Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach
R Pinacho, M Jaraiz, P Castrillo, I Martin-Bragado, JE Rubio, J Barbolla
Applied Physics Letters 86 (25), 2005
432005
Simulations of thin film deposition from atomic and cluster beams
GH Gilmer, C Roland, D Stock, M Jaraiz, TD de la Rubia
Materials Science and Engineering: B 37 (1-3), 1-7, 1996
431996
Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon
I Martin-Bragado, P Castrillo, M Jaraiz, R Pinacho, JE Rubio, J Barbolla
Physical Review B—Condensed Matter and Materials Physics 72 (3), 035202, 2005
402005
Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation
P Castrillo, R Pinacho, M Jaraiz, JE Rubio
Journal of Applied Physics 109 (10), 2011
382011
Simulation of defects and diffusion phenomena in silicon
ME Law, GH Gilmer, M Jaraíz
MRS bulletin 25 (6), 45-50, 2000
372000
Atomistic Monte Carlo simulations of three-dimensional polycrystalline thin films
JE Rubio, M Jaraiz, I Martin-Bragado, JM Hernandez-Mangas, J Barbolla, ...
Journal of Applied Physics 94 (1), 163-168, 2003
362003
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