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Martin Jaraiz
Martin Jaraiz
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Year
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
PA Stolk, HJ Gossmann, DJ Eaglesham, DC Jacobson, CS Rafferty, ...
Journal of Applied Physics 81 (9), 6031-6050, 1997
8981997
Energetics of self-interstitial clusters in Si
NEB Cowern, G Mannino, PA Stolk, F Roozeboom, HGA Huizing, ...
Physical Review Letters 82 (22), 4460, 1999
4181999
B diffusion and clustering in ion implanted Si: The role of B cluster precursors
L Pelaz, M Jaraiz, GH Gilmer, HJ Gossmann, CS Rafferty, DJ Eaglesham, ...
Applied physics letters 70 (17), 2285-2287, 1997
2791997
Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena
M Jaraiz, GH Gilmer, JM Poate, TD De La Rubia
Applied physics letters 68 (3), 409-411, 1996
2301996
B cluster formation and dissolution in Si: A scenario based on atomistic modeling
L Pelaz, GH Gilmer, HJ Gossmann, CS Rafferty, M Jaraiz, J Barbolla
Applied physics letters 74 (24), 3657-3659, 1999
2141999
Carbon in silicon: Modeling of diffusion and clustering mechanisms
R Pinacho, P Castrillo, M Jaraiz, I Martin-Bragado, J Barbolla, ...
Journal of Applied Physics 92 (3), 1582-1587, 2002
2132002
Simulation of cluster evaporation and transient enhanced diffusion in silicon
CS Rafferty, GH Gilmer, M Jaraiz, D Eaglesham, HJ Gossmann
Applied physics letters 68 (17), 2395-2397, 1996
1991996
Diffusion and interactions of point defects in silicon: Molecular dynamics simulations
GH Gilmer, TD De La Rubia, DM Stock, M Jaraiz
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995
1901995
Atomistic modeling of point and extended defects in crystalline materials
M Jaraiz, L Pelaz, E Rubio, J Barbolla, GH Gilmer, DJ Eaglesham, ...
MRS Online Proceedings Library (OPL) 532, 43, 1998
931998
Activation and deactivation of implanted B in Si
L Pelaz, VC Venezia, HJ Gossmann, GH Gilmer, AT Fiory, CS Rafferty, ...
Applied physics letters 75 (5), 662-664, 1999
821999
Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the “+ 1” model
L Pelaz, GH Gilmer, M Jaraiz, SB Herner, HJ Gossmann, DJ Eaglesham, ...
Applied physics letters 73 (10), 1421-1423, 1998
751998
Improved binary collision approximation ion implant simulators
JM Hernández-Mangas, J Arias, L Bailón, M Jaraız, J Barbolla
Journal of applied physics 91 (2), 658-667, 2002
682002
Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion
L Pelaz, GH Gilmer, VC Venezia, HJ Gossmann, M Jaraiz, J Barbolla
Applied physics letters 74 (14), 2017-2019, 1999
551999
Kinetic Monte Carlo simulation for semiconductor processing: A review
I Martin-Bragado, R Borges, JP Balbuena, M Jaraiz
Progress in Materials Science 92, 1-32, 2018
542018
Simulations of thin film deposition from atomic and cluster beams
GH Gilmer, C Roland, D Stock, M Jaraiz, TD de la Rubia
Materials Science and Engineering: B 37 (1-3), 1-7, 1996
441996
Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach
R Pinacho, M Jaraiz, P Castrillo, I Martin-Bragado, JE Rubio, J Barbolla
Applied Physics Letters 86 (25), 2005
432005
Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon
I Martin-Bragado, P Castrillo, M Jaraiz, R Pinacho, JE Rubio, J Barbolla
Physical Review B 72 (3), 035202, 2005
422005
Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation
P Castrillo, R Pinacho, M Jaraiz, JE Rubio
Journal of Applied Physics 109 (10), 2011
372011
Atomistic Monte Carlo simulations of three-dimensional polycrystalline thin films
JE Rubio, M Jaraiz, I Martin-Bragado, JM Hernandez-Mangas, J Barbolla, ...
Journal of Applied Physics 94 (1), 163-168, 2003
362003
Integrated atomistic process and device simulation of decananometre MOSFETs
A Asenov, M Jaraiz, S Roy, G Roy, F Adamu-Lema, AR Brown, V Moroz, ...
International Conference on Simulation of Semiconductor Processes and …, 2002
362002
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