| Improved near infrared energy harvesting through heterogeneously coupled SK on SML quantum dot heterostructure D Das, DP Panda, B Tongbram, J Saha, V Deviprasad, H Rawool, ... Solar Energy Materials and Solar Cells 185, 549-557, 2018 | 39 | 2018 |
| Ultranarrow spectral response of InGaAs QDIPs through the optimization of strain-coupled stacks and capping layer composition D Panda, A Balgarkashi, S Shetty, H Ghadi, B Tongbram, S Chakrabarti Materials Science in Semiconductor Processing 60, 40-44, 2017 | 31 | 2017 |
| Evidence of quantum dot size uniformity in strain-coupled multilayered In (Ga) As/GaAs QDs grown with constant overgrowth percentage D Panda, A Ahmad, H Ghadi, S Adhikary, B Tongbram, S Chakrabarti Journal of Luminescence 192, 562-566, 2017 | 24 | 2017 |
| The optical properties of strain-coupled InAs/GaAs quantum-dot heterostructures with varying thicknesses of GaAs and InGaAs spacer layers S Shetty, S Adhikary, B Tongbram, A Ahmad, H Ghadi, S Chakrabarti Journal of Luminescence 158, 231-235, 2015 | 24 | 2015 |
| Higher performance optoelectronic devices with In0. 21Al0. 21Ga0. 58As/In0. 15Ga0. 85As capping of III-V quantum dots J Saha, D Panda, B Tongbram, D Das, V Chavan, S Chakrabarti Journal of Luminescence 210, 75-82, 2019 | 21 | 2019 |
| Optimization of hybrid InAs stranski krastanov and submonolayer quantum dot heterostructures and its effect on photovoltaic energy conversion efficiency in near infrared region D Das, DP Panda, B Tongbram, J Saha, V Chavan, S Chakrabarti Solar Energy 171, 64-72, 2018 | 19 | 2018 |
| Optimization of dot layer periodicity through analysis of strain and electronic profile in vertically stacked InAs/GaAs Quantum dot heterostructure D Panda, J Saha, A Balgarkashi, S Shetty, H Rawool, SM Singh, ... Journal of Alloys and Compounds 736, 216-224, 2018 | 19 | 2018 |
| The impact of confinement enhancement AlGaAs barrier on the optical and structural properties of InAs/InGaAs/GaAs submonolayer quantum dot heterostructures D Das, H Ghadi, B Tongbram, SM Singh, S Chakrabarti Journal of Luminescence 192, 277-282, 2017 | 18 | 2017 |
| Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors B Tongbram, S Shetty, H Ghadi, S Adhikary, S Chakrabarti Applied Physics A 118, 511-517, 2015 | 18 | 2015 |
| Impact of vertical inter-QDs spacing correlation with the strain energy in a coupled bilayer quantum dot heterostructure B Tongbram, A Mandal, S Sengupta, S Chakrabarti Journal of Alloys and Compounds 725, 984-997, 2017 | 17 | 2017 |
| A comprehensive analysis of strain profile in the heterogeneously coupled Stranski-Krastanov (SK) on Submonolayer (SML) quantum dot heterostructures S Choudhary, J Saha, B Tongbram, D Panda, D Das, S Chakrabarti Journal of Alloys and Compounds 847, 156483, 2020 | 16 | 2020 |
| Analytical modeling of temperature and power dependent photoluminescence (PL) spectra of InAs/GaAs quantum dots I Mal, DP Panda, B Tongbram, DP Samajdar, S Chakrabarti Journal of Applied Physics 124 (14), 2018 | 15 | 2018 |
| Impact of an InxGa1–xAs Capping Layer in Impeding Indium Desorption from Vertically Coupled InAs/GaAs Quantum Dot Interfaces B Tongbram, S Sengupta, S Chakrabarti ACS Applied Nano Materials 1 (8), 4317-4331, 2018 | 14 | 2018 |
| A detailed investigation of strain patterning effect on bilayer InAs/GaAs quantum dot with varying GaAs barrier thickness B Tongbram, N Sehara, J Singhal, DP Panda, S Chakrabarti Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII …, 2016 | 14 | 2016 |
| Vertically coupled hybrid InAs sub-monolayer on InAs Stranski–Krastanov quantum dot heterostructure: toward next generation broadband IR detection D Das, J Saha, D Panda, B Tongbram, PP Raut, R Ramavath, S Mondal, ... IEEE Transactions on Nanotechnology 19, 76-83, 2019 | 13 | 2019 |
| Effect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectors H Ghadi, A Agarwal, S Adhikary, B Tongbram, A Mandal, S Chakrabarti, ... Journal of Vacuum Science & Technology B 32 (5), 2014 | 13 | 2014 |
| High performance short wave infrared photodetector using pip quantum dots (InAs/GaAs) validated with theoretically simulated model VP Deviprasad, H Ghadi, D Das, D Panda, H Rawool, V Chavan, ... Journal of Alloys and Compounds 804, 18-26, 2019 | 12 | 2019 |
| Strain relaxation in InAs quantum dots through capping layer variation and its impact on the ultrafast carrier dynamics A Chatterjee, D Panda, J Patwari, B Tongbram, S Chakrabarti, SK Pal Semiconductor Science and Technology 34 (9), 095017, 2019 | 12 | 2019 |
| Optimization of InAs quantum dots through growth interruption on InAs/GaAs quantum dot heterostructure B Tongbram, A Ahmad, S Sengupta, A Mandal, J Singhal, A Balgarkashi, ... Journal of Luminescence 192, 89-97, 2017 | 12 | 2017 |
| Ultrafast electronic spectroscopy on the coupling of Stranski-Krastanov and submonolayer quantum dots for potential application in near infrared light harvesting A Chatterjee, D Das, J Patwari, B Tongbram, D Panda, S Chakrabarti, ... Materials Research Express 6 (8), 085903, 2019 | 11 | 2019 |
