Effect of annealing temperature of titanium dioxide thin films on structural and electrical properties AS Bakri, MZ Sahdan, F Adriyanto, NA Raship, NDM Said, SA Abdullah, ...
AIP conference proceedings 1788 (1), 2017
150 2017 Neutron beam interaction with rutile TiO2 single crystal (1 1 1): Raman and XPS study on Ti3+-oxygen vacancy formation SA Abdullah, MZ Sahdan, N Nayan, Z Embong, CRC Hak, F Adriyanto
Materials Letters 263, 127143, 2020
118 2020 High-mobility pentacene-based thin-film transistors with a solution-processed barium titanate insulator CY Wei, SH Kuo, YM Hung, WC Huang, F Adriyanto, YH Wang
IEEE Electron Device Letters 32 (1), 90-92, 2010
95 2010 Influence of substrate annealing on inducing Ti3+ and oxygen vacancy in TiO2 thin films deposited via RF magnetron sputtering SA Abdullah, MZ Sahdan, N Nafarizal, H Saim, Z Embong, CHC Rohaida, ...
Applied Surface Science 462, 575-582, 2018
72 2018 Photoluminescence study of trap-state defect on TiO2 thin films at different substrate temperature via RF magnetron sputtering SA Abdullah, MZ Sahdan, N Nafarizal, H Saim, AS Bakri, CH Cik Rohaida, ...
Journal of Physics: Conference Series 995, 012067, 2018
56 2018 Effect of annealing temperature on the properties of copper oxide films prepared by dip coating technique NA Raship, MZ Sahdan, F Adriyanto, MF Nurfazliana, AS Bakri
AIP Conference Proceedings 1788 (1), 2017
53 2017 Pentacene-based thin-film transistors with a solution-process hafnium oxide insulator CY Wei, F Adriyanto, YJ Lin, YC Li, TJ Huang, DW Chou, YH Wang
IEEE electron device letters 30 (10), 1039-1041, 2009
45 2009 Fuzzy-PID in BLDC motor speed control using MATLAB/Simulink H Maghfiroh, A Ramelan, F Adriyanto
Journal of Robotics and Control (JRC) 3 (1), 8-13, 2022
42 2022 AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped as a Gate Dielectric CC Hu, MS Lin, TY Wu, F Adriyanto, PW Sze, CL Wu, YH Wang
IEEE transactions on electron devices 59 (1), 121-127, 2011
29 2011 Difference in structural and chemical properties of sol–gel spin coated Al doped TiO 2, Y doped TiO 2 and Gd doped TiO 2 based on trivalent dopants NDM Said, MZ Sahdan, N Nayan, H Saim, F Adriyanto, AS Bakri, ...
RSC advances 8 (52), 29686-29697, 2018
25 2018 Blending effect of 6, 13-bis (triisopropylsilylethynyl) pentacene–graphene composite layers for flexible thin film transistors with a polymer gate dielectric S Basu, F Adriyanto, YH Wang
Nanotechnology 25 (8), 085201, 2014
22 2014 IoT based building energy monitoring and controlling system using LoRa modulation and MQTT protocol A Ramelan, F Adriyanto, BAC Hermanu, MH Ibrahim, JS Saputro, ...
IOP Conference Series: Materials Science and Engineering 1096 (1), 012069, 2021
16 2021 Investigation of spin polarization in Gd-doped ZnO films for high-performance organic spintronic devices NC Ani, MZ Sahdan, N Nayan, F Adriyanto, KM Wibowo
Materials Science and Engineering: B 276, 115536, 2022
13 2022 High-performance pentacene-based thin-film transistors and inverters with solution-processed barium titanate insulators CY Wei, SH Kuo, WC Huang, YM Hung, CK Yang, F Adriyanto, YH Wang
IEEE transactions on electron devices 59 (2), 477-484, 2011
13 2011 Experimental method for improving efficiency on photovoltaic cell with using floating installation method CHB Apribowo, A Habibie, Z Arifin, F Adriyanto
AIP Conference Proceedings 2217 (1), 2020
11 2020 Influence of annealing temperature on surface morphological and electrical properties of aluminum thin film on glass substrate by vacuum thermal evaporator KM Wibowo, MZ Sahdan, MT Asmah, H Saim, F Adriyanto, S Hadi
IOP Conference Series: Materials Science and Engineering 226 (1), 012180, 2017
11 2017 AlGaN/GaN metal oxide semiconductor high electron mobility transistor using liquid-phase deposited strontium titanate TY Wu, CC Hu, PW Sze, TJ Huang, F Adriyanto, CL Wu, YH Wang
Solid-state electronics 82, 1-5, 2013
11 2013 Solution-processed barium zirconate titanate for pentacene-based thin-film transistor and memory F Adriyanto, CK Yang, TY Yang, CY Wei, YH Wang
IEEE electron device letters 34 (10), 1241-1243, 2013
10 2013 InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectric HC Lin, FM Lee, YC Cheng, KW Lee, F Adriyanto, YH Wang
Solid-state electronics 68, 27-31, 2012
9 2012 Performance evaluation of fuzzy-PID in speed control of three phase induction motor H Maghfiroh, JS Saputro, F Adriyanto, A Sujono, RL Lambang
IOP Conference Series: Materials Science and Engineering 1096 (1), 012071, 2021
8 2021