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Stewart Robertson
Stewart Robertson
KLA
Verified email at kla-tencor.com
Title
Cited by
Cited by
Year
Shot noise, LER, and quantum efficiency of EUV photoresists
RL Brainard, P Trefonas, JH Lammers, CA Cutler, JF Mackevich, ...
Emerging Lithographic Technologies VIII 5374, 74-85, 2004
2152004
Statistical simulation of resist at EUV and ArF
JJ Biafore, MD Smith, CA Mack, JW Thackeray, R Gronheid, ...
Advances in Resist Materials and Processing Technology XXVI 7273, 1207-1216, 2009
732009
Omega-3 fatty acids and cardiovascular disease: an updated systematic review.
EM Balk, GP Adams, V Langberg, C Halladay, M Chung, L Lin, ...
Evidence report/technology assessment, 1-1252, 2016
642016
Comparison of simulation approaches for chemically amplified resists
A Erdmann, W Henke, SA Robertson, E Richter, B Tollkuehn, W Hoppe
Lithography for Semiconductor Manufacturing II 4404, 99-110, 2001
532001
Mechanistic simulation of line-edge roughness
JJ Biafore, MD Smith, SA Robertson, T Graves
Advances in Resist Materials and Processing Technology XXIV 6519, 351-367, 2007
432007
Resist pattern prediction at EUV
JJ Biafore, MD Smith, E van Setten, T Wallow, P Naulleau, D Blankenship, ...
Extreme Ultraviolet (EUV) Lithography 7636, 250-259, 2010
412010
Toward a universal resist dissolution model for lithography simulation
SA Robertson, CA Mack, MJ Maslow
Lithography for Semiconductor Manufacturing II 4404, 111-122, 2001
362001
Physical resist simulation for a negative tone development process
S Robertson, M Reilly, Y Bae
2010 International Symposium on Lithography Extension, 2010
342010
Improved notch model for resist dissolution in lithography simulation
SA Robertson, EK Pavelchek, W Hoppe, R Wildfeuer
Advances in Resist Technology and Processing XVIII 4345, 912-920, 2001
322001
Negative tone development: gaining insight through physical simulation
SA Robertson, M Reilly, JJ Biafore, MD Smith, Y Bae
Advances in Resist Materials and Processing Technology XXVIII 7972, 283-293, 2011
262011
Techniques for directly measuring the absorbance of photoresists at EUV wavelengths
M Chandhok, H Cao, W Yueh, EM Gullikson, RL Brainard, SA Robertson
Emerging Lithographic Technologies VIII 5374, 861-868, 2004
202004
Compositions and processes for immersion lithography
MK Gallagher, GB Wayton, GP Prokopowicz, SA Robertson
US Patent 7,781,141, 2010
192010
The plant-derived naphthoquinone droserone inhibits in vitro measles virus infection
C Lieberherr, G Zhang, A Grafen, K Singethan, S Kendl, V Vogt, J Maier, ...
Planta Medica 83 (03/04), 232-238, 2017
172017
Crystal structure of droserone in “biogenic crystals” found under the stem bark of Ancistvocladus robertsoniorum1
K Peters, EM Peters, HG Von Schnering, G Bringmann, C Kehr, RD Haller, ...
Zeitschrift für Kristallographie-Crystalline Materials 210 (4), 290-291, 1995
171995
New methods to calibrate simulation parameters for chemically amplified resists
B Tollkuehn, A Erdmann, N Kivel, SA Robertson, D Kang, SG Hansen, ...
Optical Microlithography XV 4691, 1168-1179, 2002
162002
Comparative stochastic process variation bands for N7, N5, and N3 at EUV
AV Pret, T Graves, D Blankenship, K Bai, S Robertson, P De Bisschop, ...
Extreme Ultraviolet (EUV) Lithography IX 10583, 131-141, 2018
152018
The accuracy of a calibrated PROLITH physical resist model across illumination conditions
JJ Biafore, SA Robertson, MD Smith, C Sallee
Design for Manufacturability through Design-Process Integration 6521, 459-466, 2007
152007
Design of a cost-effective multiwavelength development rate monitoring tool
SA Scheer, CJ Brodsky, SA Robertson, D Kang
Metrology, Inspection, and Process Control for Microlithography XVI 4689 …, 2002
152002
Effects of mask bias on the mask error enhancement factor (MEEF) of contact holes
D Kang, SA Robertson, MT Reilly, EK Pavelchek
Optical Microlithography XIV 4346, 858-868, 2001
152001
Stochastic simulation of resist linewidth roughness and critical dimension uniformity for optical lithography
SA Robertson, JJ Biafore, MD Smith, MT Reilly, J Wandell
Journal of Micro/Nanolithography, MEMS and MOEMS 9 (4), 041212-041212-7, 2010
142010
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