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Shubham Patil
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Phase evolution in epitaxial Gd2O3 due to anneal temperature for silicon on insulator application
S Patil, S Kumar, B Kamaliya, AH Pandey, RG Mote, A Laha, U Ganguly
Thin Solid Films 778, 139907, 2023
22023
An accurate process-induced variability-aware compact model-based circuit performance estimation for design-technology co-optimization
S Patil, A Rawat, U Ganguly
IEEE Transactions on Electron Devices 69 (1), 45-50, 2021
22021
Process-Voltage-Temperature Variability Estimation of Tunneling Current for Band-to-Band-Tunneling-Based Neuron
S Patil, A Sharma, R Gaurav, A Kadam, AK Singh, S Lashkare, ...
IEEE Transactions on Electron Devices, 2023
12023
Highly Oriented Crystalline Si on Epitaxial Gd2O3/Si (111) substrate using Low-cost Radio Frequency Sputtering for Silicon on Insulator Application
S Patil, S Kumar, AH Pandey, S Bhunia, B Kamaliya, A Sharma, ...
Thin Solid Films, 140272, 2024
2024
Design Space and Variability Analysis of SOI MOSFET for Ultra-Low Power Band-to-Band Tunneling Neurons
J Sonawane, S Patil, A Kadam, AK Singh, S Lashkare, V Deshpande, ...
arXiv preprint arXiv:2311.18577, 2023
2023
Evolution of Ferroelectricity With Annealing Temperature and Thickness in Sputter Deposited Undoped HfO on Silicon
MH Ali, A Pandey, R Srinu, P Meihar, S Patil, S Lashkare, V Deshpande, ...
IEEE Transactions on Electron Devices, 2023
2023
Integration of Non-Filamentary Pr0.7Ca0.3MnO3 – based Memristor with Silicon-PN Junction
J Sakhuja, S Rowtu, S Patil, S Lashkare, U Ganguly
IEEE Electron Device Letters, 2023
2023
Enhancement in Bipolar Conductance Linearity by One Transistor-One Resistor (1T1R) cell with Non-Filamentary PCMO-RRAM as Synapse for Neural Networks
J Sakhuja, S Patil, S Mondal, S Lashkare, U Ganguly
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023
2023
Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing
S Patil, J Sakhuja, AK Singh, A Biswas, V Saraswat, S Kumar, S Lashkare, ...
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023
2023
Investigation of Dielectric and Quantum Confinement Based Dopant Deactivation in the Extension Region of FinFET
N Saurabh, S Patil, A Rawat, T Chiarella, B Parvais, U Ganguly
IEEE Electron Device Letters 43 (8), 1171-1174, 2022
2022
Physics-based parameter extraction methodology for channel doping gradient (CDG) LDMOS transistors based on HiSIM-HV2 model
S Patil, KN Kaushal, MS Bhoir, NR Mohapatra
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021
2021
Development and validation of compact models for LDMOS transistor with channel doping gradient
S Patil
Indian Institute of Technology Gandhinagar, 2020
2020
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Articles 1–12