| Electroreflectance and photoreflectance study of the space-charge region in semiconductors:(In-Sn-O)/InP as a model system RN Bhattacharya, H Shen, P Parayanthal, FH Pollak, T Coutts, H Aharoni Physical Review B 37 (8), 4044, 1988 | 200 | 1988 |
| An efficient low voltage, high frequency silicon CMOS light emitting device and electro-optical interface LW Snyman, M Du Plessis, E Seevinck, H Aharoni IEEE Electron Device Letters 20 (12), 614-617, 1999 | 96 | 1999 |
| X‐ray photoelectron spectroscopy investigation of ion beam sputtered indium tin oxide films as a function of oxygen pressure during deposition AJ Nelson, H Aharoni Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 5 (2 …, 1987 | 74 | 1987 |
| Silicon LEDs fabricated in standard VLSI technology as components for all silicon monolithic integrated optoelectronic systems M Du Plessis, H Aharoni, LW Snyman IEEE Journal of Selected Topics in Quantum Electronics 8 (6), 1412-1419, 2002 | 66 | 2002 |
| Increased efficiency of silicon light-emitting diodes in a standard 1.2-um silicon complementary metal oxide semiconductor technology LW Snyman, H Aharoni, M Du Plessis, RBJ Gouws Optical Engineering 37 (7), 2133-2141, 1998 | 62 | 1998 |
| Oxidation of silicon-germanium alloys S Margalit, A Bar-Lev, AB Kuper, H Aharoni, A Neugroschel Journal of Crystal Growth 17, 288-297, 1972 | 59 | 1972 |
| Planar light-emitting electro-optical interfaces in standard silicon complementary metal oxide semiconductor integrated circuitry LW Snyman, H Aharoni, M Du Plessis, JFK Marais, D Van Niekerk, ... Optical Engineering 41 (12), 3230-3240, 2002 | 57 | 2002 |
| A silicon transconductance light emitting device (TRANSLED) M Du Plessis, H Aharoni, LW Snyman Sensors and Actuators A: Physical 80 (3), 242-248, 2000 | 52 | 2000 |
| Thin inter-polyoxide films for flash memories grown at low temperature (400/spl deg/C) by oxygen radicals T Hamada, Y Saito, M Hirayama, H Aharoni, T Ohmi IEEE Electron Device Letters 22 (9), 423-425, 2001 | 49 | 2001 |
| Effects of oxygen partial pressure during deposition on the properties of ion‐beam‐sputtered indium‐tin oxide thin films J Bregman, Y Shapira, H Aharoni Journal of applied physics 67 (8), 3750-3753, 1990 | 44 | 1990 |
| Optical sources, integrated optical detectors, and optical waveguides in standard silicon CMOS integrated circuitry LW Snyman, H Aharoni, A Biber, A Bogalecki, L Canning, M du Plessis, ... Silicon-based Optoelectronics II 3953, 20-36, 2000 | 43 | 2000 |
| Optoelectronic device with separately controllable carrier injection means LW Snyman, H Aharoni, M DuPlessis US Patent 6,111,271, 2000 | 40 | 2000 |
| Injection-avalanche-based n+ pn silicon complementary metal–oxide–semiconductor light-emitting device (450–750 nm) with 2-order-of-magnitude increase in light emission intensity LW Snyman, M Du Plessis, H Aharoni Japanese journal of Applied physics 46 (4S), 2474, 2007 | 38 | 2007 |
| Si light-emitting device in integrated photonic CMOS ICs K Xu, LW Snyman, H Aharoni Optical Materials 69, 274-282, 2017 | 37 | 2017 |
| Two-and multi-terminal CMOS/BiCMOS Si LED’s M Du Plessis, H Aharoni, LW Snyman Optical Materials 27 (5), 1059-1063, 2005 | 37 | 2005 |
| Low-operating-voltage integrated silicon light-emitting devices H Aharoni, M Du Plessis IEEE journal of Quantum Electronics 40 (5), 557-563, 2004 | 37 | 2004 |
| Spatial and intensity modulation of light emission from silicon LED matrix M Du Plessis, H Aharoni, LW Snyman COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic …, 2000 | 37 | 2000 |
| Analysis of n+p silicon junctions with varying substrate doping concentrations made under ultraclean processing technology H Aharoni, T Ohmi, MM Oka, A Nakada, Y Tamai Journal of applied physics 81 (3), 1270-1288, 1997 | 37 | 1997 |
| Injection-avalanche based n+ pn Si CMOS LED’s (450nm. 750nm) with two order increase in light emission intensity-Applications for next generation silicon-based optoelectronics LW Snyman, M Du Plessis, H Aharoni Jpn. J. Appl. Physics 46 (4B), 2474-2480, 2007 | 34 | 2007 |
| The dependence of the electrical properties of ion‐beam sputtered indium tin oxide on its composition and structure TA Gessert, DL Williamson, TJ Coutts, AJ Nelson, KM Jones, RG Dhere, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 5 (4 …, 1987 | 34 | 1987 |
