| In situ optical monitoring of the decomposition of GaN thin films A Rebey, T Boufaden, B El Jani Journal of crystal growth 203 (1-2), 12-17, 1999 | 102 | 1999 |
| Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy I Moussa, H Fitouri, A Rebey, B El Jani Thin Solid Films 516 (23), 8372-8376, 2008 | 68 | 2008 |
| Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy Z Chine, H Fitouri, I Zaied, A Rebey, B El Jani Semiconductor Science and Technology 25 (6), 065009, 2010 | 63 | 2010 |
| Effect of thermal annealing on structural and optical properties of the GaAs0. 963Bi0. 037 alloy I Moussa, H Fitouri, Z Chine, A Rebey, B El Jani Semiconductor science and technology 23 (12), 125034, 2008 | 54 | 2008 |
| AP-MOVPE of thin GaAs1− xBix alloys H Fitouri, I Moussa, A Rebey, A Fouzri, B El Jani Journal of crystal growth 295 (2), 114-118, 2006 | 52 | 2006 |
| Electronic band structure calculation of GaNAsBi alloys and effective mass study MM Habchi, AB Nasr, A Rebey, B El Jani Infrared Physics & Technology 61, 88-93, 2013 | 45 | 2013 |
| First-principles calculation of the physical properties of GaAs1-xBix alloys M Mbarki, A Rebey Semiconductor science and technology 26 (10), 105020, 2011 | 39 | 2011 |
| Study of GaAsBi MOVPE growth on (1 0 0) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction H Fitouri, I Moussa, A Rebey, B El Jani Microelectronic engineering 88 (4), 476-479, 2011 | 39 | 2011 |
| Photoreflectance and photoluminescence study of localization effects in GaAsBi alloys H Fitouri, Y Essouda, I Zaied, A Rebey, B El Jani Optical Materials 42, 67-71, 2015 | 36 | 2015 |
| Surface analysis of different oriented GaAs substrates annealed under bismuth flow H Fitouri, I Moussa, A Rebey, B El Jani Journal of crystal growth 300 (2), 347-352, 2007 | 35 | 2007 |
| Stress and density of defects in Si‐doped GaN Z Chine, A Rebey, H Touati, E Goovaerts, M Oueslati, BE Jani, S Laugt physica status solidi (a) 203 (8), 1954-1961, 2006 | 34 | 2006 |
| Theoretical study of optoelectronic properties of GaAs1− xBix alloys using valence band anticrossing model MM Habchi, AB Nasr, A Rebey, B El Jani Infrared Physics & Technology 67, 531-536, 2014 | 33 | 2014 |
| In situ reflectance monitoring of the growth and etching of AlAs/GaAs structures in MOVPE A Rebey, MM Habchi, A Bchetnia, B El Jani Journal of crystal growth 261 (4), 450-457, 2004 | 31 | 2004 |
| Ab initio investigation of structural and electronic properties of zinc blende AlN1− xBix alloys M Mbarki, R Alaya, A Rebey Solid state communications 155, 12-15, 2013 | 30 | 2013 |
| Growth of GaAsBi alloy under alternated bismuth flows by metalorganic vapor phase epitaxy Z Chine, H Fitouri, I Zaied, A Rebey, B El Jani Journal of crystal growth 330 (1), 35-38, 2011 | 29 | 2011 |
| First principles calculations of structural and electronic properties of GaN1− xBix alloys M Mbarki, A Rebey Journal of alloys and compounds 530, 36-39, 2012 | 23 | 2012 |
| Spectroscopic ellipsometry study of GaAs1− xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy N Ben Sedrine, I Moussa, H Fitouri, A Rebey, B El Jani, R Chtourou Applied Physics Letters 95 (1), 2009 | 22 | 2009 |
| Time-resolved photoluminescence and photoreflectance spectroscopy of GaN layers grown on SiN-treated sapphire substrate: Optical properties evolution at different growth stages M Bouzidi, S Soltani, Z Chine, A Rebey, MK Shakfa optical materials 73, 252-259, 2017 | 19 | 2017 |
| Bismuth catalyzed growth of GaAsBi nanowires by metalorganic vapor phase epitaxy Y Essouda, H Fitouri, R Boussaha, N Elayech, A Rebey, B El Jani Materials Letters 152, 298-301, 2015 | 19 | 2015 |
| Laser reflectometry in situ monitoring of InGaAs grown by atmospheric pressure metalorganic vapour phase epitaxy MM Habchi, A Rebey, A Fouzri, B El Jani Applied surface science 253 (1), 275-278, 2006 | 18 | 2006 |
