| Diamond power devices: state of the art, modelling, figures of merit and future perspective N Donato, N Rouger, J Pernot, G Longobardi, F Udrea Journal of Physics D: Applied Physics 53 (9), 093001, 2019 | 179 | 2019 |
| On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices L Efthymiou, G Longobardi, G Camuso, T Chien, M Chen, F Udrea Applied Physics Letters 110 (12), 2017 | 136 | 2017 |
| Understanding the threshold voltage instability during OFF-state stress in p-GaN HEMTs L Efthymiou, K Murukesan, G Longobardi, F Udrea, A Shibib, K Terrill IEEE Electron Device Letters 40 (8), 1253-1256, 2019 | 94 | 2019 |
| Impact of donor traps on the 2DEG and electrical behavior of AlGaN/GaN MISFETs G Longobardi, F Udrea, S Sque, GAM Hurkx, J Croon, E Napoli, J Šonský IEEE electron device letters 35 (1), 27-29, 2013 | 53 | 2013 |
| Zero reverse recovery in SiC and GaN Schottky diodes: A comparison L Efthymiou, G Camuso, G Longobardi, F Udrea, E Lin, T Chien, M Chen 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 42 | 2016 |
| GaN for power devices: Benefits, applications, and normally-off technologies G Longobardi IEEE, Semiconductor Conference (CAS), 2017 International, 2017 | 30 | 2017 |
| On the source of oscillatory behaviour during switching of power enhancement mode GaN HEMTs L Efthymiou, G Camuso, G Longobardi, T Chien, M Chen, F Udrea Energies 10 (3), 407, 2017 | 30 | 2017 |
| Short circuit robustness analysis of new generation Enhancement-mode p-GaN power HEMTs M Riccio, G Romano, L Maresca, G Breglio, A Irace, G Longobardi 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 22 | 2018 |
| GaN power devices for Electric Vehicles State-of-the-art and future perspective G Longobardi, L Efthymiou, M Arnold 2018 IEEE International Conference on Electrical Systems for Aircraft …, 2018 | 21 | 2018 |
| Design of a normally-off diamond JFET for high power integrated applications N Donato, D Pagnano, E Napoli, G Longobardi, F Udrea Diamond and Related Materials 78, 73-82, 2017 | 16 | 2017 |
| Gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs A Borghese, M Riccio, G Longobardi, L Maresca, G Breglio, A Irace Microelectronics Reliability 114, 113762, 2020 | 13 | 2020 |
| On the vertical leakage of GaN-on-Si lateral transistors and the effect of emission and trap-to-trap-tunneling through the AIN/Si barrier G Longobardi, S Yang, D Pagnano, G Camuso, F Udrea, J Sun, R Garg, ... Power Semiconductor Devices and IC's (ISPSD), 2017 29th International …, 2017 | 13 | 2017 |
| SOI multidirectional thermoelectric flow sensor for harsh environment applications A De Luca, G Longobardi, F Udrea 2015 International Semiconductor Conference (CAS), 95-98, 2015 | 13 | 2015 |
| Modelling 2DEG charges in AlGaN/GaN heterostructures G Longobardi, F Udrea, S Sque, J Croon, F Hurkx, E Napoli, J Šonský CAS 2012 (International Semiconductor Conference) 2, 363-366, 2012 | 13 | 2012 |
| Substantiation of buried two dimensional hole gas (2DHG) existence in GaN-on-Si epitaxial heterostructure J Sun, G Longobardi, F Udrea, C Zhu, G Camuso, S Yang, R Garg, ... Applied Physics Letters 110 (16), 2017 | 11 | 2017 |
| The dynamics of surface donor traps in AlGaN/GaN MISFETs using transient measurements and TCAD modelling G Longobardi, F Udrea, S Sque, J Croon, F Hurkx, J Šonský 2014 IEEE International Electron Devices Meeting, 17.1. 1-17.1. 4, 2014 | 11 | 2014 |
| Suppression technique of vertical leakage current in GaN-on-Si power transistors G Longobardi, D Pagnano, F Udrea, J Sun, R Garg, M Imam, A Charles Japanese Journal of Applied Physics 58 (SC), SCCD12, 2019 | 10 | 2019 |
| Power semiconductor device with an auxiliary gate structure F Udrea, L Efthymiou, G Longobardi, M Arnold US Patent 11,404,565, 2022 | 9 | 2022 |
| Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate D Pagnano, G Longobardi, F Udrea, J Sun, R Garg, H Kim, C Ostermaier, ... Applied Physics Letters 115 (20), 2019 | 9 | 2019 |
| Experimental analysis of electro-thermal interaction in normally-off pGaN HEMT devices M Riccio, G Romano, A Borghese, L Maresca, G Breglio, A Irace, ... 2018 IEEE International Conference on Electrical Systems for Aircraft …, 2018 | 9 | 2018 |
Loizos EfthymiouUniversity of CambridgeVerified email at cam.ac.uk
