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Madhu Sudan Kayastha
Madhu Sudan Kayastha
Associate Professor, School of Engineering, Faculty of Science and Technology, Pokhara University
Verified email at pu.edu.np - Homepage
Title
Cited by
Cited by
Year
Direct growth of nanographene films by surface wave plasma chemical vapor deposition and their application in photovoltaic devices
G Kalita, MS Kayastha, H Uchida, K Wakita, M Umeno
RSC advances 2 (8), 3225-3230, 2012
592012
Improved photovoltaic properties of heterojunction carbon based solar cell
S Adhikari, MS Kayastha, DC Ghimire, HR Aryal, S Adhikary, T Takeuchi, ...
Scientific Research Publishing, 2013
202013
Ultrahigh-purity undoped GaAs epitaxial layers prepared by liquid phase epitaxy
MS Kayastha, I Matsunami, DP Sapkota, M Takahashi, K Wakita
Japanese journal of applied physics 48 (12R), 121102, 2009
112009
Analysis of linewidth enhancement factor for compressively strained AlGaInAs and InGaAsP quantum well lasers
DP Sapkota, MS Kayastha, K Wakita
Optical and Quantum Electronics 45, 35-43, 2013
82013
High-extinction ratio and low-driving-voltage spatial light modulator by use of ultrahigh-purity GaAs
MS Kayastha, M Takahashi, K Wakita
Japanese Journal of Applied Physics 49 (10R), 102201, 2010
82010
Effect of electric field on exciton in high‐purity GaAs epilayer measured at room temperature
MS Kayastha, DP Sapkota, M Takahashi, K Wakita
Electronics letters 49 (1), 57-58, 2013
52013
Proposed Model of Electric Field Effects in High-Purity GaAs at Room Temperature
DP Sapkota, MS Kayastha, M Takahashi, K Wakita
Optics and Photonics Journal 4 (5), 99-103, 2014
32014
Experimental and Theoretical study of excitonic electroabsorption in high-purity GaAs at room temperature
DP Sapkota, MS Kayastha, M Takahashi, K Wakita
2012 Photonics Global Conference (PGC), 1-4, 2012
22012
The temperature dependence of threshold current and efficiency of AlGaInAs and InGaAsP lasers related to intervalence band absorption loss
DP Sapkota, MS Kayastha, K Wakita
IEEJ Transactions on Electronics, Information and Systems 131 (2), 290-295, 2011
22011
Dependence of threshold current density on quantum well composition for compressive strained-layer AlxGayIn1−x−yAs lasers
DP Sapkota, MS Kayastha, K Wakita
2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010
22010
Excitonic Refractive Index Change in High Purity GaAs Modulator at Room Temperature for Optical Fiber Communication Network
DP Sapkota, MS Kayastha, K Wakita
International Journal of Electronics and Communication Engineering 9 (2 …, 2015
12015
Room Temperature Excitonic Electroabsorption Effect for High-Speed and Low-Driving Voltage Spatial Light Modulators
MS Kayastha, DP Sapkota, M Takahashi, K Wakita
2012 International Conference on Solid State Devices and Materials (SSDM …, 2012
12012
Low driving voltage spatial light modulator fabricated by ultrahigh-purity GaAs
MS Kayastha, I Matsunami, DP Sapkota, M Takahashi, K Wakita
2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010
12010
Electric field effects on exciton in the shape of transmission spectra in high-purity GaAs at room temperature
DP Sapkota, MS Kayastha, K Wakita
Optical and Quantum Electronics 47, 203-210, 2015
2015
Comparing Characteristics of Graphene Films Grown by Surface Wave Assisted Microwave Plasma CVD using Camphor and Methane Precursors.
HR Aryal, M Kayastha, H Uchida, K Wakita, M Umeno
JSAP Annual Meetings Extended Abstracts The 61st JSAP Spring Meeting 2014 …, 2014
2014
Synthesis of Few Layers Graphene Domains on Copper Substrates by Surface Wave Assisted Microwave Plasma CVD
H Aryal, M Kayastha
JSAP Annual Meetings Extended Abstracts The 74th JSAP Autumn Meeting 2013 …, 2013
2013
Effects of Temperature and Well Composition on Threshold Current Density for Compressive Strained-Layer AlxGayIn1-x-yAs Single Quantum Well Lasers
DP Sapkota, MS Kayastha, K Wakita
IEEJ Transactions on Electronics, Information and Systems 133 (6), 1139-1144, 2013
2013
Electric Field Effect on Electroabsorption with Exciton of High-Purity GaAs
DP Sapkota, MS Kayastha, M Takahashi, K Wakita
JSAP Annual Meetings Extended Abstracts The 73rd JSAP Autumn Meeting 2012 …, 2012
2012
Comparison of linewidth enhancement factor for compressively strained AlGaInAs and InGaAsP quantum well lasers
DP Sapkota, MS Kayastha, K Wakita
Physics and Simulation of Optoelectronic Devices XX 8255, 241-247, 2012
2012
Strain effects on performance of AlGalnAs/InP single quantum well lasers
DP Sapkota, MS Kayastha, K Wakita
IPRM 2011-23rd International Conference on Indium Phosphide and Related …, 2011
2011
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