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Zachariah Hennighausen
Zachariah Hennighausen
Verified email at mit.edu
Title
Cited by
Cited by
Year
Twistronics: a turning point in 2D quantum materials
Z Hennighausen, S Kar
Electronic Structure 3 (1), 014004, 2021
592021
Tunable and laser-reconfigurable 2D heterocrystals obtained by epitaxial stacking of crystallographically incommensurate Bi2Se3 and MoS2 atomic layers
A Vargas, F Liu, C Lane, D Rubin, I Bilgin, Z Hennighausen, M DeCapua, ...
Science advances 3 (7), e1601741, 2017
552017
Evidence of a purely electronic two-dimensional lattice at the interface of TMD/Bi 2 Se 3 heterostructures
Z Hennighausen, C Lane, IG Buda, VK Mathur, A Bansil, S Kar
Nanoscale 11 (34), 15929-15938, 2019
292019
Oxygen-Induced In Situ Manipulation of the Interlayer Coupling and Exciton Recombination in Bi2Se3/MoS2 2D Heterostructures
Z Hennighausen, C Lane, A Benabbas, K Mendez, M Eggenberger, ...
ACS applied materials & interfaces 11 (17), 15913-15921, 2019
282019
Direct-write of nanoscale domains with tunable metamagnetic order in FeRh thin films
CD Cress, D Wickramaratne, MR Rosenberger, Z Hennighausen, ...
ACS Applied Materials & Interfaces 13 (1), 836-847, 2020
242020
Absorption and emission modulation in a MoS2–GaN (0001) heterostructure by interface phonon–exciton coupling
Y Poudel, J Sławińska, P Gopal, S Seetharaman, Z Hennighausen, S Kar, ...
Photonics Research 7 (12), 1511-1520, 2019
172019
Widely tunable Bi2Se3/transition metal dichalcogenide 2D heterostructures for write-read-erase-reuse applications
Z Hennighausen, I Bilgin, C Casey, S Kar
2D Materials 6 (4), 041003, 2019
132019
Organic photovoltaics with stacked graphene anodes
E Keyvani-Someh, Z Hennighausen, W Lee, RCK Igwe, ME Kramdi, S Kar, ...
ACS Applied Energy Materials 1 (1), 17-21, 2017
122017
Interlayer Exciton–Phonon Bound State in Bi2Se3/Monolayer WS2 van der Waals Heterostructures
Z Hennighausen, J Moon, KM McCreary, CH Li, OMJ van’t Erve, ...
ACS nano 17 (3), 2529-2536, 2023
92023
Probing the interlayer interaction between dissimilar 2D heterostructures by in situ rearrangement of their interface
Z Hennighausen, S Kar
2D Materials 6 (3), 035022, 2019
92019
Active Control of Coherent Dynamics in Hybrid Plasmonic MoS2 Monolayers with Dressed Phonons
Y Poudel, GN Lim, M Moazzezi, Z Hennighausen, Y Rostovtsev, ...
ACS Photonics 6 (7), 1645-1655, 2019
92019
The influence of crystal thickness and interlayer interactions on the properties of heavy ion irradiated MoS2
LH Isherwood, Z Hennighausen, SK Son, BF Spencer, PT Wady, ...
2D Materials 7 (3), 035011, 2020
82020
In vivo partial restoration of neural activity across severed mouse spinal cord bridged with ultralong carbon nanotubes
V Mathur, S Talapatra, S Kar, Z Hennighausen
ACS Applied Bio Materials 4 (5), 4071-4078, 2021
52021
ACS Applied Materials and Interfaces
CD Cress, D Wickramaratne, MR Rosenberger, Z Hennighausen, ...
DOI, 0
5
Laser-Patterned Submicrometer Bi2Se3–WS2 Pixels with Tunable Circular Polarization at Room Temperature
Z Hennighausen, D Wickramaratne, KM McCreary, BM Hudak, ...
ACS Applied Materials & Interfaces 14 (7), 9504-9514, 2022
22022
Room-Temperature Oxygen Transport in Nanothin BixOySez Enables Precision Modulation of 2D Materials
Z Hennighausen, BM Hudak, M Phillips, J Moon, KM McCreary, ...
ACS nano 16 (9), 13969-13981, 2022
12022
Evidence of Purely Electronic Lattice at Interface of TMD/Bi2Se3 2D Heterostructures Induced by Strong Interlayer Coupling
Z Hennighausen, C Lane, I Buda, V Mathur, A Bansil, S Kar
Bulletin of the American Physical Society 65, 2020
12020
Laser-written submicron pixels with tunable circular polarization and write-read-erase-reuse capability on a nano material or two-dimensional heterostructure at room temperature
ZB Hennighausen, KM McCreary, OMJ van't Erve, BT Jonker
US Patent 11,997,934, 2024
2024
Two dimensional materials for use in ultra high density information storage and sensor devices
ZB Hennighausen, S Kar
US Patent 11,832,535, 2023
2023
Nano-thin BixOySez low-temperature oxygen transporter membrane for oxygen transport, separation, and two-dimensional (2D) material manipulation
ZB Hennighausen, B Hudak, OMJ van't Erve, M Phillips
US Patent App. 18/113,285, 2023
2023
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