Follow
Sulaiman Rabbaa
Sulaiman Rabbaa
Arab American University
Verified email at aaup.edu - Homepage
Title
Cited by
Cited by
Year
Validation of a triangular quantum well model for GaN-based HEMTs used in pH and dipole moment sensing
S Rabbaa, J Stiens
Journal of Physics D: Applied Physics 45 (47), 475101, 2012
212012
Charge density and plasmon modes in a triangular quantum well model for doped and undoped gated AlGaN/GaN HEMTs
S Rabbaa, J Stiens
Journal of Physics D: Applied Physics 44 (32), 325103, 2011
162011
Influence of electron scattering on phonon–plasmon coupled modes dispersion and free‐electron absorption in n‐doped GaN semiconductors at mid‐IR wavelengths
G Shkerdin, S Rabbaa, J Stiens, R Vounckx
physica status solidi (b) 251 (4), 882-891, 2014
102014
Optical interactions in the InSe/CdSe interface
AF Qasrawi, S Rabbaa
physica status solidi (b) 253 (4), 755-759, 2016
92016
Free-electron absorption in n-doped GaN semiconductors at mid-IR wavelengths in the strong phonon–plasmon coupling regime
G Shkerdin, S Rabbaa, J Stiens, R Vounckx
Journal of Physics D: Applied Physics 45 (49), 495103, 2012
82012
Theoretical triangular quantum well model for AlGaN/GaN HEMT structure used as polar liquid sensor
JS S. Rabbaa
IEEE International Conference in Semiconductor Electronics (ICSE), 2012
32012
Longitudinal optical phonon-plasmon interaction in Ga-group V compounds for IR and THz applications
JS S. Rabbaa, W. Vandermeiren
Proc. of the 15th Annual Symp. of the IEEE Photonics Benelux Chapter, 257-260, 2010
3*2010
Reflectivity modulator based on GaSb/GaAs heterostructure
S Rabbaa
Journal of Physics: Conference Series 869 (1), 012038, 2017
2017
GaAs-based grating system for Q-switching on the basis of IMOS structure
S Rabbaa, W Vandermeiren, G Shkerdin, J Stiens
2016 IEEE International Conference on Semiconductor Electronics (ICSE), 300-303, 2016
2016
GaN-based Semiconductor Devices: Theoretical Study of the Electronic and Optoelectronic Characterization
J Stiens, S Rabbaa, G Shkerdin
Lambert Academic Publishing, 2014
2014
GaN-based Semiconductor Devices
S Rabbaa, G Shkerdin, J Stiens
LAP LAMBERT Academic Publishing, 2014
2014
Theoretical study of the electronic and optoelectronic characterization of GaN-Based semiconductor devices
S Rabbaa
2013
Free electron absorption in n-doped GaN semiconductors at mid-IR wavelengths in the strong plasmon-phonon coupling regime
G Shkerdin, S Rabbaa, J Stiens, R Vounckx
2012
Electric Properties of Dielectric Materials at Intermediate Frequencies
S Rabbaa
Journal of Al-Quds Open university for research and studies, 2008
2008
The system can't perform the operation now. Try again later.
Articles 1–14