Validation of a triangular quantum well model for GaN-based HEMTs used in pH and dipole moment sensing S Rabbaa, J Stiens Journal of Physics D: Applied Physics 45 (47), 475101, 2012 | 21 | 2012 |
Charge density and plasmon modes in a triangular quantum well model for doped and undoped gated AlGaN/GaN HEMTs S Rabbaa, J Stiens Journal of Physics D: Applied Physics 44 (32), 325103, 2011 | 16 | 2011 |
Influence of electron scattering on phonon–plasmon coupled modes dispersion and free‐electron absorption in n‐doped GaN semiconductors at mid‐IR wavelengths G Shkerdin, S Rabbaa, J Stiens, R Vounckx physica status solidi (b) 251 (4), 882-891, 2014 | 10 | 2014 |
Optical interactions in the InSe/CdSe interface AF Qasrawi, S Rabbaa physica status solidi (b) 253 (4), 755-759, 2016 | 9 | 2016 |
Free-electron absorption in n-doped GaN semiconductors at mid-IR wavelengths in the strong phonon–plasmon coupling regime G Shkerdin, S Rabbaa, J Stiens, R Vounckx Journal of Physics D: Applied Physics 45 (49), 495103, 2012 | 8 | 2012 |
Theoretical triangular quantum well model for AlGaN/GaN HEMT structure used as polar liquid sensor JS S. Rabbaa IEEE International Conference in Semiconductor Electronics (ICSE), 2012 | 3 | 2012 |
Longitudinal optical phonon-plasmon interaction in Ga-group V compounds for IR and THz applications JS S. Rabbaa, W. Vandermeiren Proc. of the 15th Annual Symp. of the IEEE Photonics Benelux Chapter, 257-260, 2010 | 3* | 2010 |
Reflectivity modulator based on GaSb/GaAs heterostructure S Rabbaa Journal of Physics: Conference Series 869 (1), 012038, 2017 | | 2017 |
GaAs-based grating system for Q-switching on the basis of IMOS structure S Rabbaa, W Vandermeiren, G Shkerdin, J Stiens 2016 IEEE International Conference on Semiconductor Electronics (ICSE), 300-303, 2016 | | 2016 |
GaN-based Semiconductor Devices: Theoretical Study of the Electronic and Optoelectronic Characterization J Stiens, S Rabbaa, G Shkerdin Lambert Academic Publishing, 2014 | | 2014 |
GaN-based Semiconductor Devices S Rabbaa, G Shkerdin, J Stiens LAP LAMBERT Academic Publishing, 2014 | | 2014 |
Theoretical study of the electronic and optoelectronic characterization of GaN-Based semiconductor devices S Rabbaa | | 2013 |
Free electron absorption in n-doped GaN semiconductors at mid-IR wavelengths in the strong plasmon-phonon coupling regime G Shkerdin, S Rabbaa, J Stiens, R Vounckx | | 2012 |
Electric Properties of Dielectric Materials at Intermediate Frequencies S Rabbaa Journal of Al-Quds Open university for research and studies, 2008 | | 2008 |