| Nitride-based LEDs with p-InGaN capping layer SJ Chang, CH Chen, PC Chang, YK Su, PC Chen, YD Jhou, H Hung, ... IEEE Transactions on Electron Devices 50 (12), 2567-2570, 2003 | 67 | 2003 |
| Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures YD Jhou, CH Chen, RW Chuang, SJ Chang, YK Su, PC Chang, PC Chen, ... Solid-state electronics 49 (8), 1347-1351, 2005 | 52 | 2005 |
| Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer T Shioda, H Hung, J Hwang, H Yoshida, N Sugiyama, S Nunoue US Patent 8,785,943, 2014 | 19 | 2014 |
| High-power 2.8 W blue-violet laser diode for white light sources R Hashimoto, H Hung, J Hwang, S Saito, S Nunoue Optical review 19, 412-414, 2012 | 14 | 2012 |
| InGaN/GaN multi-quantum well metal-insulator semiconductor photodetectors with photo-CVD SiO2 layers PC Chang, CH Chen, SJ Chang, YK Su, PC Chen, YD Jhou, CH Liu, ... Japanese journal of applied physics 43 (4S), 2008, 2004 | 14 | 2004 |
| Improvement of (11-22) GaN on m-Plane Sapphire With CrN Interlayer by Using Molecular Beam Epitaxy KW Liu, SJ Chang, SJ Young, TH Hsueh, H Hung, YC Mai, SM Wang, ... Journal of The Electrochemical Society 158 (10), H983, 2011 | 13 | 2011 |
| Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layer N Sugiyama, T Sato, H Ono, S Mitsugi, T Shioda, J Hwang, H Hung, ... US Patent 8,952,401, 2015 | 12 | 2015 |
| Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer KW Liu, SJ Young, SJ Chang, TH Hsueh, H Hung, SX Chen, YZ Chen Journal of alloys and compounds 511 (1), 1-4, 2012 | 12 | 2012 |
| Kinetics of persistent photoconductivity in InGaN epitaxial films grown by MOCVD H Hung, CH Chen, SJ Chang, H Kuan, RM Lin, CH Liu Journal of crystal growth 298, 246-250, 2007 | 12 | 2007 |
| Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer T Shioda, H Hung, J Hwang, T Sato, N Sugiyama, S Nunoue US Patent 8,525,194, 2013 | 11 | 2013 |
| Nitride semiconductor wafer including different lattice constants H Hung, T Shioda, J Hwang, N Sugiyama, S Nunoue US Patent 8,928,000, 2015 | 9 | 2015 |
| GaN MSM photodetectors with photo-CVD annealed Ni/Au electrodes YD Jhou, CH Chen, SJ Chang, YK Su, PC Chang, PC Chen, H Hung, ... Microelectronics journal 37 (4), 328-331, 2006 | 9 | 2006 |
| Semiconductor device T Nishiwaki, K Ichinoseki, K Aida, K Oasa, H Hung, H Matsuba US Patent App. 15/903,955, 2019 | 8 | 2019 |
| Effects of thermal annealing on In-induced metastable defects in InGaN films H Hung, KT Lam, SJ Chang, H Kuan, CH Chen, UH Liaw Materials science in semiconductor processing 10 (2-3), 112-116, 2007 | 8 | 2007 |
| Stable cascode GaN HEMT operation by direct gate drive T Sugiyama, H Hung, Y Isobe, A Yoshioka, T Yasuzumi, Y Sato, M Tsuji, ... 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 7 | 2020 |
| Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer T Shioda, H Hung, J Hwang, T Sato, N Sugiyama, S Nunoue US Patent 8,692,287, 2014 | 7 | 2014 |
| Improving the luminescence of InGaN–GaN blue LEDs through selective ring-region activation of the Mg-doped GaN layer RM Lin, JC Li, YL Chou, KH Chen, YH Lin, YC Lu, MC Wu, H Hung, ... IEEE Photonics Technology Letters 19 (12), 928-930, 2007 | 7 | 2007 |
| Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence Y Isobe, H Hung, K Oasa, T Ono, T Onizawa, A Yoshioka, Y Takada, ... Journal of Applied Physics 121 (23), 2017 | 6 | 2017 |
| InGaN∕ GaN Multiple-Quantum-Well LEDs with Si-Doped Barriers H Hung, KT Lam, SJ Chang, CH Chen, H Kuan, YX Sun Journal of the Electrochemical Society 155 (6), H455, 2008 | 6 | 2008 |
| AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Low-Temperature-Grown Cap Layers SJ Chang, H Hung, YC Lin, MH Wu, H Kuan, RM Lin Japanese journal of applied physics 46 (4S), 2471, 2007 | 6 | 2007 |
Shoou-Jinn ChangProfessor of Electrical Engineering, National Cheng Kung UniversityVerified email at mail.ncku.edu.tw
