| Electrical characterization of vapor-phase-grown single-crystal ZnO FD Auret, SA Goodman, MJ Legodi, WE Meyer, DC Look Applied physics letters 80 (8), 1340-1342, 2002 | 191 | 2002 |
| Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β‐Ga2O3 thin films grown by pulsed laser deposition D Splith, S Müller, F Schmidt, H Von Wenckstern, JJ van Rensburg, ... physica status solidi (a) 211 (1), 40-47, 2014 | 123 | 2014 |
| Summary of Schottky barrier height data on epitaxially grown n-and p-GaAs G Myburg, FD Auret, WE Meyer, CW Louw, MJ Van Staden Thin solid films 325 (1-2), 181-186, 1998 | 78 | 1998 |
| Fabrication and characterisation of NiO/ZnO structures JM Nel, FD Auret, L Wu, MJ Legodi, WE Meyer, M Hayes Sensors and Actuators B: Chemical 100 (1-2), 270-276, 2004 | 68 | 2004 |
| The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes E Omotoso, WE Meyer, FD Auret, AT Paradzah, M Diale, SMM Coelho, ... Materials Science in Semiconductor Processing 39, 112-118, 2015 | 65 | 2015 |
| Effect of Sm doping ZnO nanorods on structural optical and electrical properties of Schottky diodes prepared by chemical bath deposition MAM Ahmed, BS Mwankemwa, E Carleschi, BP Doyle, WE Meyer, JM Nel Materials Science in Semiconductor Processing 79, 53-60, 2018 | 57 | 2018 |
| Electrical characterization of defects introduced in n-GaAs by alpha and beta irradiation from radionuclides FD Auret, SA Goodman, G Myburg, WE Meyer Applied Physics A 56, 547-553, 1993 | 56 | 1993 |
| The effect of alpha-particle and proton irradiation on the electrical and defect properties of n-GaAs SA Goodman, FD Auret, WE Meyer Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1994 | 54 | 1994 |
| The effect of alpha-particle and proton irradiation on the electrical and defect properties of n-GaAs SA Goodman, FD Auret, WE Meyer Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1994 | 54 | 1994 |
| Ti-and Fe-related charge transition levels in β− Ga2O3 C Zimmermann, YK Frodason, AW Barnard, JB Varley, K Irmscher, ... Applied Physics Letters 116 (7), 2020 | 48 | 2020 |
| Electrical characterization of defects introduced during electron beam deposition of Pd Schottky contacts on n-type Ge FD Auret, WE Meyer, S Coelho, M Hayes Applied physics letters 88 (24), 2006 | 48 | 2006 |
| The dependence of barrier height on temperature for Pd Schottky contacts on ZnO W Mtangi, FD Auret, C Nyamhere, PJJ van Rensburg, A Chawanda, ... Physica B: Condensed Matter 404 (22), 4402-4405, 2009 | 41 | 2009 |
| Electrical characteristics of Ar‐ion sputter induced defects in epitaxially grown n‐GaAs FD Auret, SA Goodman, G Myburg, WE Meyer Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992 | 41 | 1992 |
| Effects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and Laplace DLTS W Mtangi, FD Auret, WE Meyer, MJ Legodi, PJ Janse van Rensburg, ... Journal of Applied Physics 111 (9), 2012 | 39 | 2012 |
| Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band FD Auret, WE Meyer, PJJ van Rensburg, M Hayes, JM Nel, ... Physica B: Condensed Matter 401, 378-381, 2007 | 37 | 2007 |
| Electrical characterisation of hole traps in n‐type GaN FD Auret, WE Meyer, L Wu, M Hayes, MJ Legodi, B Beaumont, P Gibart physica status solidi (a) 201 (10), 2271-2276, 2004 | 35 | 2004 |
| Structural, optical and electrical properties of the fabricated Schottky diodes based on ZnO, Ce and Sm doped ZnO films prepared via wet chemical technique MAM Ahmed, WE Meyer, JM Nel Materials Research Bulletin 115, 12-18, 2019 | 32 | 2019 |
| Electrical defects introduced during high-temperature irradiation of GaN and AlGaN M Hayes, FD Auret, L Wu, WE Meyer, JM Nel, MJ Legodi Physica B: Condensed Matter 340, 421-425, 2003 | 29 | 2003 |
| Effect of (Ce, Al) co-doped ZnO thin films on the Schottky diode properties fabricated using the sol-gel spin coating MAM Ahmed, WE Meyer, JM Nel Materials Science in Semiconductor Processing 103, 104612, 2019 | 27 | 2019 |
| Effects of 5.4 MeV alpha-particle irradiation on the electrical properties of nickel Schottky diodes on 4H–SiC E Omotoso, WE Meyer, FD Auret, AT Paradzah, M Diale, SMM Coelho, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2015 | 26 | 2015 |
