Mitigation of electromigration in metal interconnects via hexagonal boron nitride as an Ångström‐thin passivation layer Y Jeong, O Douglas, U Misra, MRE Tanjil, K Watanabe, T Taniguchi, ... Advanced Electronic Materials 7 (6), 2100002, 2021 | 5 | 2021 |
Controllable Conductance Quantization in Electrochemical Metallization Based Tantalum Oxide Crossbar RRAM Devices U Misra, V Sahu, A Mahapatra, AK Das, RS Ajimsha, P Misra Authorea Preprints, 2023 | | 2023 |
Conductance Quantization in Cu/Ta2O5/Pt Resistive Random Access Memory Devices U Misra, V Sahu, AK Das, RS Ajimsha, P Misra TechRxiv, 2023 | | 2023 |
Performance of ReS2 as Channel Material for (Photo) Transistors: DAAD Rise 2022 Report U Misra | | 2022 |
Hexagonal Boron Nitride: Mitigation of Electromigration in Metal Interconnects via Hexagonal Boron Nitride as an Ångström‐Thin Passivation Layer (Adv. Electron. Mater. 6/2021) Y Jeong, O Douglas, U Misra, MRE Tanjil, K Watanabe, T Taniguchi, ... Advanced Electronic Materials 7 (6), 2170020, 2021 | | 2021 |