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Zurab Kushitashvili
Zurab Kushitashvili
Institute of Micro and Nanoelectronics, Tbilisi, Georgia
Verified email at micronano.ge
Title
Cited by
Cited by
Year
Properties of hafnium oxide received by ultra violet stimulated plasma anodization
Z Kushitashvili, A Bibilashvili, N Biyikli
IEEE Transactions on Device and Materials Reliability 17 (4), 667-671, 2017
92017
CV measurement of HfO2 dielectric layer received by UV stimulated plasma anodizing
A Bibilashvili, Z Kushitashvili
IOP Conference Series: Earth and Environmental Science 44 (5), 052008, 2016
52016
Mechanism of Processes Stimulated by Ultraviolet Radiation
Z Kushitashvili, A Bibilashvili
IOP Conference Series: Earth and Environmental Science 609 (1), 012051, 2020
22020
Low Temperature Oxidation of GaAs by UV Stimulated Plasma Anodizing
A Bibilashvili, Z Kushitashvili
IOP Conference Series: Earth and Environmental Science 44 (3), 032002, 2016
22016
Electrical, optical and structural properties of titanium dioxide dielectric films formed by DC magnetron sputtering
A Bibilashvili, Z Kushitashvili, G Skhiladze
Nano Studies, 111-114, 2014
22014
CV Characterization and Electric Parameters of ZrO2 Received by UV Stimulated Plasma Anodizing
Z Kushitashvili, A Bibilashvili, V Borisenko
IOP Conference Series: Earth and Environmental Science 362 (1), 012070, 2019
12019
Radiation effect on the parameters of field effect transistors with Schottky barrier on GaAs
A Bibilashvili, Z Kushitashvili
IOP Conference Series: Earth and Environmental Science 362 (1), 012071, 2019
12019
Structural Properties of III-Nitrides Received by UV Stimulated Technology
Z Kushitashvili, A Bibilashvili, R Guliaevi, A Kurtanidze
Nanotechnology Perceptions 20 (1), 72–79-72–79, 2024
2024
STUDY OF SILICON-GRAPHENE PROPERTIES
A Bakhtiari, T Berberashvili, P Kervalishvili, A Bilbilashvili, Z Kushitashvili
Book of Abstracts JAPMED 12, 81-81, 2023
2023
STRUCTURAL PROPERTIES OF III-NITRIDES RECEIVED BY UV STIMULATED TECHNOLOGY
Z Kushitashvili, A Bibilashvili, R Guliaevi, A Kurtanidze
Book of Abstracts JAPMED 12, 103-105, 2023
2023
Nanoscale HfO2 and ZrO2 gate oxides in field effect transistors
A Bibilashvili, Z Kushitashvili, S Sikharulidze, L Jangidze
Nano Studies, 30, 2022
2022
Improving Characteristic Parameters of Memristor Based on HfO2 Active Layer
Z Kushitashvili, A Bibilashvili
IOP Conference Series: Earth and Environmental Science 906 (1), 012018, 2021
2021
SYSTEMS OF PULSED PHOTON IRRADIATION (PPI) OF MATERIALS AND STRUCTURES IN ELECTRONICS
Z Jibuti, A Bibilashvili, L Jibuti, Z Kushitashvili
IMS 2021, 69, 2021
2021
FABRICATION OF MEMRISTOR ON THE BASES OF ZrO2 AND HfO2 DIOXIDES AND RESEARCH OF ITS PHYSICAL CHARACTERISTICS
L Jibuti, A Bibilashvili, Z Kushitashvili
IMS 2021, 65, 2021
2021
Properties of TiO2/TiOx Active Layers and Fabrication Resistive Switching Device
A Bibilashvili, Z Kushitashvili
International Journal of Nanoscience 18 (03n04), 1940085, 2019
2019
CV CHARACTERIZATION AND ELECTRIC PARAMETERS OF ZRO2 RECEIVED BY UV STIMULATED PLASMA ANODIZING
A Bibilashvili, Z Kushitashvili
Book of Abstracts JAPMED 11, 109-109, 2019
2019
Low Temperature Technology Receiving Nano Scale Metal Oxides
Z Kushitashvili, A Bibilashvili
2017-Sustainable Industrial Processing Summit 5, 83-84, 2017
2017
Research of processes of photo stimulated crystallization of nano dimensional layers of silicon on sapphire films
Z Jibuti, S Avsarkisov, A Bibilashvili, R Gulyaev, N Dolidze, Z Kushitashvili, ...
Nano Studies, 77-82, 2014
2014
Redistribution of Impurities in Semiconductors Caused by Irradiation
A Bibilashvili, R Kazarov, I Lomidze, Z Bokhochadze, T Ratiani, ...
Bulletin of the Georgian National Academy of Sciences 172 (3), 458-460, 2005
2005
Atomic mechanism of stimulated solid-phase epitaxial growth of amorphous layers; Mikroskopicheskij mekhanizm stimulirovannogo ehpitaksial'nogo rosta amorfizirovannykh sloev
AB Gerasimov, AP Bibilashvili, ZG Bokhochadze, MT Vepkhvadze, ...
Fizika i Khimiya Obrabotki Materialov, 2001
2001
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