| Nucleation-controlled gold-induced-crystallization for selective formation of Ge (100) and (111) on insulator at low-temperature (∼ 250° C) JH Park, T Suzuki, M Kurosawa, M Miyao, T Sadoh Applied Physics Letters 103 (8), 2013 | 85 | 2013 |
| High carrier mobility in orientation-controlled large-grain (≥ 50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization JH Park, K Kasahara, K Hamaya, M Miyao, T Sadoh Applied Physics Letters 104 (25), 2014 | 78 | 2014 |
| A pseudo-single-crystalline germanium film for flexible electronics H Higashi, K Kasahara, K Kudo, H Okamoto, K Moto, JH Park, S Yamada, ... Applied Physics Letters 106 (4), 2015 | 52 | 2015 |
| Au-induced low-temperature (∼ 250° C) crystallization of Si on insulator through layer-exchange process JH Park, M Kurosawa, N Kawabata, M Miyao, T Sadoh Electrochemical and Solid-State Letters 14 (6), H232, 2011 | 39 | 2011 |
| Low temperature (~ 250° C) layer exchange crystallization of Si1− xGex (x= 1–0) on insulator for advanced flexible devices JH Park, M Kurosawa, N Kawabata, M Miyao, T Sadoh Thin Solid Films 520 (8), 3293-3295, 2012 | 29 | 2012 |
| (111)-oriented large-grain (≥ 50 µm) Ge crystals directly formed on flexible plastic substrate by gold-induced layer-exchange crystallization JH Park, M Miyao, T Sadoh Japanese journal of applied physics 53 (2), 020302, 2014 | 23 | 2014 |
| Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics T Sadoh, JH Park, R Aoki, M Miyao Japanese journal of applied physics 55 (3S1), 03CB01, 2016 | 14 | 2016 |
| Crystallization of electrodeposited germanium thin film on silicon (100) MSZ Abidin, R Matsumura, M Anisuzzaman, JH Park, S Muta, ... Materials 6 (11), 5047-5057, 2013 | 12 | 2013 |
| The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100) MSZ Abidin, T Morshed, H Chikita, Y Kinoshita, S Muta, M Anisuzzaman, ... Materials 7 (2), 1409-1421, 2014 | 7 | 2014 |
| Low-Temperature Formation of Large-Grain (≥ 10 μm) Ge at Controlled-Position on Insulator by Gold-Induced Crystallization Combined with Diffusion-Barrier Patterning R Aoki, JH Park, M Miyao, T Sadoh ECS Journal of Solid State Science and Technology 5 (3), P179, 2016 | 6 | 2016 |
| Au-Catalyst Induced Low Temperature (∼ 250 ºC) Layer Exchange Crystallization for SiGe On Insulator JH Park, M Kurosawa, N Kawabata, M Miyao, T Sadoh ECS Transactions 35 (5), 39, 2011 | 5 | 2011 |
| Low-temperature (≤ 300° C) formation of orientation-controlled large-grain (≥ 10 μm) Ge-rich SiGe on insulator by gold-induced crystallization T Sadoh, JH Park, R Aoki, M Miyao Thin Solid Films 602, 3-6, 2016 | 4 | 2016 |
| Formation of germanium (111) on graphene on insulator by rapid melting growth for novel germanium-on-insulator structure T Morshed, Y Kai, R Matsumura, JH Park, H Chikita, T Sadoh, AM Hashim Materials Letters 168, 223-227, 2016 | 3 | 2016 |
| Sn-induced low-temperature (~ 150° C) crystallization of Ge on insulator A Ooato, T Suzuki, JH Park, M Miyao, T Sadoh Thin Solid Films 557, 155-158, 2014 | 3 | 2014 |
| Erratum:“Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics” T Sadoh, JH Park, R Aoki, M Miyao Japanese Journal of Applied Physics 56 (12), 129206, 2017 | 1 | 2017 |
| Low-temperature metal-induced crystallization of orientation-controlled sige on insulator for flexible electronics T Sadoh, JH Park, M Kurosawa, M Miyao ECS Transactions 58 (9), 213, 2013 | 1 | 2013 |
| Low-temperature metal-induced crystallization of orientation-controlled sige on insulator for flexible electronics T Sadoh, JH Park, M Kurosawa, M Miyao ECS Transactions 58 (9), 213, 2013 | 1 | 2013 |
| Low-temperature (≤ 250° C) crystallization of Si on insulating substrate by gold-induced layer-exchange technique JH Park, M Kurosawa, N Kawabata, M Miyao, T Sadoh TENCON 2010-2010 IEEE Region 10 Conference, 2196-2198, 2010 | 1 | 2010 |
| Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics (vol 55, 03CB01, 2016) T Sadoh, JH Park, R Aoki, M Miyao JAPANESE JOURNAL OF APPLIED PHYSICS 56 (12), 2017 | | 2017 |
| Formation of large-grain crystalline germanium on single layer graphene on insulator by rapid melting growth T Morshed, Y Kai, R Matsumura, JH Park, H Chikita, T Sadoh, AM Hashim Materials Letters 178, 147-150, 2016 | | 2016 |
