| 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/> 6 V MW Dvorak, CR Bolognesi, OJ Pitts, SP Watkins IEEE Electron Device Letters 22 (8), 361-363, 2001 | 246 | 2001 |
| 205-GHz (Al, In) N/GaN HEMTs H Sun, AR Alt, H Benedickter, E Feltin, JF Carlin, M Gonschorek, ... IEEE electron device letters 31 (9), 957-959, 2010 | 214 | 2010 |
| Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy J Hu, XG Xu, JAH Stotz, SP Watkins, AE Curzon, MLW Thewalt, N Matine, ... Applied Physics Letters 73 (19), 2799-2801, 1998 | 204 | 1998 |
| 150-GHz cutoff frequencies and 2-W/mm output power at 40 GHz in a millimeter-wave AlGaN/GaN HEMT technology on silicon D Marti, S Tirelli, AR Alt, J Roberts, CR Bolognesi IEEE electron device letters 33 (10), 1372-1374, 2012 | 121 | 2012 |
| Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors CR Bolognesi, EJ Caine, H Kroemer IEEE Electron Device Letters 15 (1), 16-18, 1994 | 115 | 1994 |
| Transistor modeling: Robust small-signal equivalent circuit extraction in various HEMT technologies AR Alt, D Marti, CR Bolognesi IEEE microwave magazine 14 (4), 83-101, 2013 | 114 | 2013 |
| Si/SiGe: C and InP/GaAsSb heterojunction bipolar transistors for THz applications P Chevalier, M Schröter, CR Bolognesi, V d'Alessandro, M Alexandrova, ... Proceedings of the IEEE 105 (6), 1035-1050, 2017 | 112 | 2017 |
| Interface roughness scattering in InAs/AlSb quantum wells CR Bolognesi, H Kroemer, JH English Applied physics letters 61 (2), 213-215, 1992 | 107 | 1992 |
| Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations C Nguyen, B Brar, CR Bolognesi, JJ Pekarik, H Kroemer, JH English Journal of electronic materials 22, 255-258, 1993 | 100 | 1993 |
| InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs CR Bolognesi, MMW Dvorak, P Yeo, XG Xu, SP Watkins IEEE Transactions on Electron Devices 48 (11), 2631-2639, 2001 | 99 | 2001 |
| 102-GHz AlInN/GaN HEMTs on silicon with 2.5-W/mm output power at 10 GHz H Sun, AR Alt, H Benedickter, CR Bolognesi, E Feltin, JFÇ Carlin, ... IEEE electron device letters 30 (8), 796-798, 2009 | 97 | 2009 |
| Fully Passivated AlInN/GaN HEMTs With of 205/220 GHz S Tirelli, D Marti, H Sun, AR Alt, JF Carlin, N Grandjean, CR Bolognesi IEEE electron device letters 32 (10), 1364-1366, 2011 | 92 | 2011 |
| Heavily carbon-doped GaAsSb grown on InP for HBT applications SP Watkins, OJ Pitts, C Dale, XG Xu, MW Dvorak, N Matine, CR Bolognesi Journal of Crystal growth 221 (1-4), 59-65, 2000 | 92 | 2000 |
| High-transconductance InAs/AlSb heterojunction field-effect transistors with delta-doped AlSb upper barriers JD Werking, CR Bolognesi, LD Chang, C Nguyen, EL Hu, H Kroemer IEEE electron device letters 13 (3), 164-166, 1992 | 92 | 1992 |
| 94-GHz large-signal operation of AlInN/GaN high-electron-mobility transistors on silicon with regrown ohmic contacts D Marti, S Tirelli, V Teppati, L Lugani, JF Carlin, M Malinverni, ... IEEE Electron device letters 36 (1), 17-19, 2014 | 82 | 2014 |
| At-bias extraction of access parasitic resistances in AlGaN/GaN HEMTs: Impact on device linearity and channel electron velocity DW DiSanto, CR Bolognesi IEEE transactions on electron devices 53 (12), 2914-2919, 2006 | 78 | 2006 |
| Non-blocking collector InP/GaAs/sub 0.51/Sb/sub 0.49//InP double heterojunction bipolar transistors with a staggered lineup base-collector junction CR Bolognesi, N Matine, RW Dvorak, XG Xu, J Hu, SP Watkins IEEE Electron Device Letters 20 (4), 155-157, 1999 | 77 | 1999 |
| 107-GHz (Al, Ga) N/GaN HEMTs on silicon with improved maximum oscillation frequencies S Tirelli, D Marti, H Sun, AR Alt, H Benedickter, EL Piner, CR Bolognesi IEEE Electron Device Letters 31 (4), 296-298, 2010 | 67 | 2010 |
| High-Performance 0.1- Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz H Sun, AR Alt, H Benedickter, CR Bolognesi IEEE Electron Device Letters 30 (2), 107-109, 2008 | 67 | 2008 |
| Far‐infrared photoresponse of the InAs/GaInSb superlattice IH Campbell, I Sela, BK Laurich, DL Smith, CR Bolognesi, LA Samoska, ... Applied physics letters 59 (7), 846-848, 1991 | 65 | 1991 |
Haifeng SunETH ZurichVerified email at infineon.com
