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Prafful Golani
Prafful Golani
Intel, Western Digital, University of Minnesota, Nanyang Technological University
Verified email at umn.edu - Homepage
Title
Cited by
Cited by
Year
Self-gating in semiconductor electrocatalysis
Y He, Q He, L Wang, C Zhu, P Golani, AD Handoko, X Yu, C Gao, M Ding, ...
Nature Materials 18 (10), 1098-1104, 2019
1792019
Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction
Y He, P Tang, Z Hu, Q He, C Zhu, L Wang, Q Zeng, P Golani, G Gao, W Fu, ...
Nature communications 11 (1), 57, 2020
1772020
Amorphizing noble metal chalcogenide catalysts at the single-layer limit towards hydrogen production
Y He, L Liu, C Zhu, S Guo, P Golani, B Koo, P Tang, Z Zhao, M Xu, C Zhu, ...
Nature Catalysis 5 (3), 212-221, 2022
1252022
MoTe2 Lateral Homojunction Field-Effect Transistors Fabricated using Flux-Controlled Phase Engineering
R Ma, H Zhang, Y Yoo, ZP Degregorio, L Jin, P Golani, ...
ACS nano 13 (7), 8035-8046, 2019
912019
Machine learning-guided synthesis of advanced inorganic materials
B Tang, Y Lu, J Zhou, T Chouhan, H Wang, P Golani, M Xu, Q Xu, C Guan, ...
Materials Today 41, 72-80, 2020
882020
Layer dependence of dielectric response and water-enhanced ambient degradation of highly anisotropic black As
H Yun, S Ghosh, P Golani, SJ Koester, KA Mkhoyan
ACS nano 14 (5), 5988-5997, 2020
122020
Right-angle black phosphorus tunneling field effect transistor
MC Robbins, P Golani, SJ Koester
IEEE Electron Device Letters 40 (12), 1988-1991, 2019
102019
Ambipolar transport in van der Waals black arsenic field effect transistors
P Golani, H Yun, S Ghosh, J Wen, KA Mkhoyan, SJ Koester
Nanotechnology 31 (40), 405203, 2020
82020
Optimizing Ohmic contacts to Nd-doped n-type SrSnO3
VR Saran Kumar Chaganti, P Golani, TK Truttmann, F Liu, B Jalan, ...
Applied Physics Letters 118 (14), 2021
62021
Growth of black arsenic phosphorus thin films and its application for field-effect transistors
N Izquierdo, JC Myers, P Golani, A De Los Santos, NCA Seaton, ...
Nanotechnology 32 (32), 325601, 2021
42021
Self-heating in ultra-wide bandgap n-type SrSnO3 thin films
P Golani, CN Saha, PP Sundaram, F Liu, TK Truttmann, VR Chaganti, ...
Applied Physics Letters 121 (16), 2022
22022
Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n-Type Doping, and Field-Effect Transistor Using CaSnO3
F Liu*, P Golani*, TK Truttmann, I Evangelista, MA Smeaton, D Bugallo, ...
ACS nano, 2023
12023
Tunable metal contacts at layered black-arsenic/metal interface forming during metal deposition for device fabrication
S Kundu, P Golani, H Yun, S Guo, KM Youssef, SJ Koester, KA Mkhoyan
Communications Materials 3 (1), 11, 2022
12022
Atomic and Electronic Structure of Black Arsenic and Ambient Stability Studied by Analytical STEM
H Yun, S Ghosh, P Golani, SJ Koester, KA Mkhoyan
Microscopy and Microanalysis, 1-3, 2020
12020
Understanding 3D anisotropic reactive ion etching of oxide-metal stacks
P Golani, RJ Tirukkonda, AN Fancher, SR Ross, MD Kraman, ...
Journal of Vacuum Science & Technology B 41 (6), 2023
2023
LOCATION DEPENDENT SENSE TIME OFFSET PARAMETER FOR IMPROVEMENT TO THE THRESHOLD VOLTAGE DISTRIBUTION MARGIN IN NON-VOLATILE MEMORY STRUCTURES
XB Pitner, P Golani, R Kumar
US Patent 20230197173-A1, 2023
2023
Evaluating the thermal performance of perovskite SrSnO3 field effect transistors
B Bista, P Golani, F Liu, T Truttmann, G Pavlidis, A Centrone, B Jalan, ...
2023 22nd IEEE Intersociety Conference on Thermal and Thermomechanical …, 2023
2023
Adsorption-controlled growth and electronic transport properties of La-doped CaSnO3 films
F Liu, T Truttmann, P Golani, J Wen, M Smeaton, L Kourkoutis, S Koester, ...
APS March Meeting Abstracts 2023, A38. 002, 2023
2023
Exploration of Carrier Transport and Novel Devices in Emerging Semiconductors
P Golani
2022
Amorphizing noble metal for single-atom-layer catalysis
Y He, L Liu, C Zhu, P Golani, B Koo, S Guo, P Tang, Z Zhao, M Xu, P Yu, ...
2020
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