Systematic variation of the Raman spectra of DLC films as a function of sp2: sp3 composition S Prawer, KW Nugent, Y Lifshitz, GD Lempert, E Grossman, J Kulik, ... Diamond and related materials 5 (3-5), 433-438, 1996 | 598 | 1996 |
Damage threshold for ion‐beam induced graphitization of diamond C Uzan‐Saguy, C Cytermann, R Brener, V Richter, M Shaanan, R Kalish Applied Physics Letters 67 (9), 1194-1196, 1995 | 360 | 1995 |
Ion implantation in diamond, graphite and related materials MS Dresselhaus, R Kalish Springer Science & Business Media, 2013 | 341 | 2013 |
Thermal stability and relaxation in diamond-like-carbon. A Raman study of films with different fractions ( to ) R Kalish, Y Lifshitz, K Nugent, S Prawer Applied physics letters 74 (20), 2936-2938, 1999 | 286 | 1999 |
A new surface electron-emission mechanism in diamond cathodes MW Geis, NN Efremow, KE Krohn, JC Twichell, TM Lyszczarz, R Kalish, ... Nature 393 (6684), 431-435, 1998 | 274 | 1998 |
Doping of diamond R Kalish Carbon 37 (5), 781-785, 1999 | 241 | 1999 |
Growth mechanisms of DLC films from C+ ions: experimental studies Y Lifshitz, GD Lempert, E Grossman, I Avigal, C Uzan-Saguy, R Kalish, ... Diamond and related materials 4 (4), 318-323, 1995 | 241 | 1995 |
Properties of nitrogen‐doped amorphous hydrogenated carbon films O Amir, R Kalish Journal of applied physics 70 (9), 4958-4962, 1991 | 228 | 1991 |
Electrochemical behavior of boron‐doped diamond electrodes N Vinokur, B Miller, Y Avyigal, R Kalish Journal of the Electrochemical Society 143 (10), L238, 1996 | 221 | 1996 |
Free-standing single crystal silicon nanoribbons W Shi, H Peng, N Wang, CP Li, L Xu, CS Lee, R Kalish, ST Lee Journal of the American Chemical Society 123 (44), 11095-11096, 2001 | 212 | 2001 |
Ion-beam-induced transformation of diamond S Prawer, R Kalish Physical Review B 51 (22), 15711, 1995 | 210 | 1995 |
Increasing the coherence time of single electron spins in diamond by high temperature annealing B Naydenov, F Reinhard, A Lämmle, V Richter, R Kalish, ... Applied Physics Letters 97 (24), 2010 | 182 | 2010 |
Growth and characterization of phosphorus doped n-type diamond thin films S Koizumi, M Kamo, Y Sato, S Mita, A Sawabe, A Reznik, C Uzan-Saguy, ... Diamond and related materials 7 (2-5), 540-544, 1998 | 181 | 1998 |
Ion‐beam‐induced hydrogen release from a‐C:H: A bulk molecular recombination model ME Adel, O Amir, R Kalish, LC Feldman Journal of Applied Physics 66 (7), 3248-3251, 1989 | 172 | 1989 |
Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers Z Teukam, J Chevallier, C Saguy, R Kalish, D Ballutaud, M Barbé, ... Nature materials 2 (7), 482-486, 2003 | 167 | 2003 |
The search for donors in diamond R Kalish Diamond and Related Materials 10 (9-10), 1749-1755, 2001 | 151 | 2001 |
Electrodes of nitrogen‐incorporated tetrahedral amorphous carbon a novel thin‐film electrocatalytic material with diamond‐like stability K Yoo, B Miller, R Kalish, X Shi Electrochemical and solid-state letters 2 (5), 233, 1999 | 146 | 1999 |
Is sulfur a donor in diamond? R Kalish, A Reznik, C Uzan-Saguy, C Cytermann Applied Physics Letters 76 (6), 757-759, 2000 | 143 | 2000 |
Growth of aligned carbon nanotubes by biasing during growth Y Avigal, R Kalish Applied Physics Letters 78 (16), 2291-2293, 2001 | 136 | 2001 |
The nature of damage in ion-implanted and annealed diamond R Kalish, A Reznik, KW Nugent, S Prawer Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1999 | 135 | 1999 |