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Hyunmin Cho
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Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two-Dimensional WSe2/MoTe2 Stack Channel
S Park, Y Jeong, HJ Jin, J Park, H Jang, S Lee, W Huh, H Cho, HG Shin, ...
ACS nano 14 (9), 12064-12071, 2020
412020
Engineering MoSe2/MoS2 heterojunction traps in 2D transistors for multilevel memory, multiscale display, and synaptic functions
Y Jeong, HJ Lee, J Park, S Lee, HJ Jin, S Park, H Cho, S Hong, T Kim, ...
npj 2D Materials and Applications 6 (1), 23, 2022
212022
Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS2 Field Effect Transistors
H Cho, D Kang, Y Lee, H Bae, S Hong, Y Cho, K Kim, Y Yi, JH Park, S Im
Nano letters 21 (8), 3503-3510, 2021
192021
Quaternary NAND Logic and Complementary Ternary Inverter with p‐MoTe2/n‐MoS2 Heterostack Channel Transistors
S Park, HJ Lee, W Choi, HJ Jin, H Cho, Y Jeong, S Lee, K Kim, S Im
Advanced Functional Materials 32 (13), 2108737, 2022
142022
Complementary Type Ferroelectric Memory Transistor Circuits with P‐ and N‐Channel MoTe2
S Hong, KL Kim, Y Cho, H Cho, JH Park, C Park, S Im
Advanced Electronic Materials 6 (9), 2000479, 2020
132020
Nanowatt use 8 V switching nonvolatile memory transistors with 2D MoTe2 channel and ferroelectric P (VDF-TrFE)
Y Cho, H Cho, S Hong, D Kang, Y Yi, C Park, JH Park, S Im
Nano Energy 81, 105686, 2021
112021
Self-Assembled TaOX/2H-TaS2 as a van der Waals Platform of a Multilevel Memristor Circuit Integrated with a β-Ga2O3 Transistor
KT Kim, T Kim, Y Jeong, S Park, J Kim, H Cho, SK Cha, YS Kim, H Bae, ...
ACS nano 17 (4), 3666-3675, 2023
22023
Damage‐Free Charge Transfer Doping of 2D Transition Metal Dichalcogenide Channels by van der Waals Stamping of MoO3 and LiF
Y Cho, S Lee, H Cho, D Kang, Y Yi, K Kim, JH Park, S Im
Small Methods 6 (3), 2101073, 2022
22022
Negative Photoresponse Switching via Electron–Hole Recombination at The Type III Junction of MoTe2 Channel/SnS2 Top Layer
Y Jeong, T Kim, H Cho, J Ahn, S Hong, DK Hwang, S Im
Advanced Materials 35 (48), 2304599, 2023
12023
5 nm Ultrathin Crystalline Ferroelectric P(VDF‐TrFE)‐Brush Tuned for Hysteresis‐Free Sub 60 mV dec−1 Negative‐Capacitance Transistors
H Cho, HJ Jin, S Lee, S Jeon, Y Cho, S Park, M Jang, LJ Widiapradja, ...
Advanced Materials 35 (22), 2300478, 2023
12023
Ambipolar Nonvolatile Memory Behavior and Reversible Type‐Conversion in MoSe2/MoSe2 Transistors with Modified Stack Interface
T Kim, D Kang, S Lee, Y Jeong, H Cho, J Kim, H Bae, Y Yi, K Kim, S Im
Advanced Functional Materials 32 (49), 2205567, 2022
12022
Correction to: Complementary Type Ferroelectric Memory Transistor Circuits with P-and N-Channel MoTe 2 (Advanced Electronic Materials,(2020), 6, 9,(2000479), 10.1002/aelm …
S Hong, KL Kim, Y Cho, H Cho, JH Park, C Park, S Im
Advanced Electronic Materials 7 (5), 2000906, 2021
2021
Two Dimensional Molybdenum Diselenide Field Effect Transistor with Polymer-Brush/Channel Interface for Touch Sensor Applications
Y Jeong, JH Park, H Cho, S Im
한국진공학회 학술발표회초록집, 227-227, 2020
2020
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