| Thickness dependent parasitic channel formation at AlN/Si interfaces H Chandrasekar, KN Bhat, M Rangarajan, S Raghavan, N Bhat Scientific reports 7 (1), 15749, 2017 | 36 | 2017 |
| UV/near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction SV Solanke, R Soman, M Rangarajan, S Raghavan, DN Nath Sensors and Actuators A: Physical 317, 112455, 2021 | 35 | 2021 |
| Material-to-device performance correlation for AlGaN-based solar-blind p–i–n photodiodes A Kalra, S Rathkanthiwar, R Muralidharan, S Raghavan, DN Nath Semiconductor Science and Technology 35 (3), 035001, 2020 | 24 | 2020 |
| In2Se3 Visible/Near-IR Photodetector With Observation of Band-Edge in Spectral Response RK Mech, SV Solanke, N Mohta, M Rangarajan, DN Nath IEEE Photonics Technology Letters 31 (11), 905-908, 2019 | 22 | 2019 |
| Integration of multi-layered materials with wide bandgap semiconductors for multi-spectral photodetectors: Case for MoS2/GaN and β-In2Se3/GaN SV Solanke, S Rathkanthiwar, A Kalra, RK Mech, M Rangarajan, ... Semiconductor Science and Technology 34 (7), 075020, 2019 | 14 | 2019 |
| Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications N Remesh, H Chandrasekar, A Venugopalrao, S Raghavan, ... Journal of Applied Physics 130 (7), 2021 | 12 | 2021 |
| Study of the impact of interface traps associated with SiN X passivation on AlGaN/GaN MIS-HEMTs R Baby, A Venugopalrao, H Chandrasekar, S Raghavan, M Rangarajan, ... Semiconductor Science and Technology 37 (3), 035005, 2022 | 6 | 2022 |
| Multi-layer MoS2/GaN UV-Visible photodetector with observation of MoS2 band edge in spectral responsivity S Solanke, S Rathakanthiwar, M Rangarajan, S Raghavan, DN Nath arXiv preprint arXiv:1803.11012, 2018 | 2 | 2018 |
