Homoepitaxial growth of β‐Ga2O3 layers by metal‐organic vapor phase epitaxy G Wagner, M Baldini, D Gogova, M Schmidbauer, R Schewski, M Albrecht, ... physica status solidi (a) 211 (1), 27-33, 2014 | 232 | 2014 |
Anisotropy, phonon modes, and free charge carrier parameters in monoclinic -gallium oxide single crystals M Schubert, R Korlacki, S Knight, T Hofmann, S Schöche, V Darakchieva, ... Physical Review B 93 (12), 125209, 2016 | 191 | 2016 |
Electrical compensation by Ga vacancies in Ga2O3 thin films E Korhonen, F Tuomisto, D Gogova, G Wagner, M Baldini, Z Galazka, ... Applied Physics Letters 106 (24), 2015 | 189 | 2015 |
MoSi2N4 single-layer: a novel two-dimensional material with outstanding mechanical, thermal, electronic and optical properties A Bafekry, M Faraji, DM Hoat, M Shahrokhi, MM Fadlallah, F Shojaei, ... Journal of Physics D: Applied Physics 54 (15), 155303, 2021 | 187 | 2021 |
Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE D Gogova, G Wagner, M Baldini, M Schmidbauer, K Irmscher, R Schewski, ... Journal of Crystal Growth 401, 665-669, 2014 | 171 | 2014 |
Homo-and heteroepitaxial growth of Sn-doped β-Ga 2 O 3 layers by MOVPE D Gogova, M Schmidbauer, A Kwasniewski CrystEngComm 17 (35), 6744-6752, 2015 | 136 | 2015 |
Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001) R Schewski, G Wagner, M Baldini, D Gogova, Z Galazka, T Schulz, ... Applied physics express 8 (1), 011101, 2014 | 130 | 2014 |
Analysis of the formation conditions for large area epitaxial graphene on SiC substrates R Yakimova, C Virojanadara, D Gogova, M Syväjärvi, D Siche, K Larsson, ... Materials Science Forum 645, 565-568, 2010 | 98 | 2010 |
Growth of thick GaN layers with hydride vapour phase epitaxy B Monemar, H Larsson, C Hemmingsson, IG Ivanov, D Gogova Journal of crystal growth 281 (1), 17-31, 2005 | 93 | 2005 |
Tunable electronic and magnetic properties of MoSi2N4 monolayer via vacancy defects, atomic adsorption and atomic doping A Bafekry, M Faraji, MM Fadlallah, AB Khatibani, A Abdolahzadeh Ziabari, ... Applied Surface Science 559, 149862, 2021 | 89 | 2021 |
Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3 AY Polyakov, NB Smirnov, IV Shchemerov, D Gogova, SA Tarelkin, ... Journal of Applied Physics 123 (11), 2018 | 86 | 2018 |
Biphenylene monolayer as a two-dimensional nonbenzenoid carbon allotrope: a first-principles study A Bafekry, M Faraji, MM Fadlallah, HR Jappor, S Karbasizadeh, ... Journal of Physics: Condensed Matter 34 (1), 015001, 2021 | 83 | 2021 |
First-principles investigation of nonmetal doped single-layer BiOBr as a potential photocatalyst with a low recombination rate MM Obeid, C Stampfl, A Bafekry, Z Guan, HR Jappor, CV Nguyen, ... Physical Chemistry Chemical Physics 22 (27), 15354-15364, 2020 | 78 | 2020 |
Atomic structure, electronic states, and optical properties of epitaxially grown β-Ga2O3 layers DA Zatsepin, DW Boukhvalov, AF Zatsepin, YA Kuznetsova, D Gogova, ... Superlattices and Microstructures 120, 90-100, 2018 | 72 | 2018 |
Structural and optical properties of CVD thin tungsten oxide films D Gogova, K Gesheva, A Szekeres, M Sendova‐Vassileva physica status solidi (a) 176 (2), 969-984, 1999 | 68 | 1999 |
Ion implantation in β-Ga2O3: Physics and technology A Nikolskaya, E Okulich, D Korolev, A Stepanov, D Nikolichev, ... Journal of Vacuum Science & Technology A 39 (3), 2021 | 67 | 2021 |
Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template D Gogova, A Kasic, H Larsson, C Hemmingsson, B Monemar, F Tuomisto, ... Journal of applied physics 96 (1), 799-806, 2004 | 66 | 2004 |
The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC J Eriksson, R Pearce, T Iakimov, C Virojanadara, D Gogova, M Andersson, ... Applied Physics Letters 100 (24), 2012 | 63 | 2012 |
Effect of indium as a surfactant in (Ga1− xInx) 2O3 epitaxial growth on β-Ga2O3 by metal organic vapour phase epitaxy M Baldini, M Albrecht, D Gogova, R Schewski, G Wagner Semiconductor Science and Technology 30 (2), 024013, 2015 | 61 | 2015 |
Ab-initio-driven prediction of puckered penta-like PdPSeX (XO, S, Te) Janus monolayers: Study on the electronic, optical, mechanical and photocatalytic properties A Bafekry, M Faraji, MM Fadlallah, HR Jappor, NN Hieu, ... Applied Surface Science 582, 152356, 2022 | 59 | 2022 |