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Lukas Snyman
Lukas Snyman
UNISA, Institute for Nanotechnology and Water Sustainability (INanoWS)
Verified email at unisa.ac.za - Homepage
Title
Cited by
Cited by
Year
Micro optical sensors based on avalanching silicon light-emitting devices monolithically integrated on chips
K Xu, Y Chen, TA Okhai, LW Snyman
Optical Materials Express 9 (10), 3985-3997, 2019
2342019
Light emission from a poly-silicon device with carrier injection engineering
K Xu, L Huang, Z Zhang, J Zhao, Z Zhang, LW Snyman, JW Swart
Materials Science and Engineering: B 231, 28-31, 2018
1432018
An efficient low voltage, high frequency silicon CMOS light emitting device and electro-optical interface
LW Snyman, M Du Plessis, E Seevinck, H Aharoni
IEEE Electron Device Letters 20 (12), 614-617, 1999
961999
Silicon LEDs fabricated in standard VLSI technology as components for all silicon monolithic integrated optoelectronic systems
M Du Plessis, H Aharoni, LW Snyman
IEEE Journal of Selected Topics in Quantum Electronics 8 (6), 1412-1419, 2002
662002
Increased efficiency of silicon light-emitting diodes in a standard 1.2-um silicon complementary metal oxide semiconductor technology
LW Snyman, H Aharoni, M Du Plessis, RBJ Gouws
Optical Engineering 37 (7), 2133-2141, 1998
621998
Planar light-emitting electro-optical interfaces in standard silicon complementary metal oxide semiconductor integrated circuitry
LW Snyman, H Aharoni, M Du Plessis, JFK Marais, D Van Niekerk, ...
Optical Engineering 41 (12), 3230-3240, 2002
572002
A silicon transconductance light emitting device (TRANSLED)
M Du Plessis, H Aharoni, LW Snyman
Sensors and Actuators A: Physical 80 (3), 242-248, 2000
522000
Optical sources, integrated optical detectors, and optical waveguides in standard silicon CMOS integrated circuitry
LW Snyman, H Aharoni, A Biber, A Bogalecki, L Canning, M du Plessis, ...
Symposium on Integrated Optoelectronics, 20-36, 2000
432000
Optical sources, integrated optical detectors, and optical waveguides in standard silicon CMOS integrated circuitry
LW Snyman, H Aharoni, A Biber, A Bogalecki, L Canning, M du Plessis, ...
Silicon-based Optoelectronics II 3953, 20-36, 2000
432000
Optoelectronic device with separately controllable carrier injection means
LW Snyman, H Aharoni, M Du Plessis
US Patent 6111271 A, 2000
402000
Higher Intensity Si Av LEDs in a RF bipolar process through carrier energy and carrier momentum engineering
LW Snyman, K Xu, JL Polleux, C Ogudo, Kingsley and Viana
IEEE Journal of Quantum Electronics 77, 2015
392015
Photonic Transitions (1.4 eV–2.8 eV) in Silicon pnpInjection-Avalanche CMOS LEDs as Function of Depletion Layer Profiling and Defect Engineering
LW Snyman, M Du Plessis, E Bellotti
IEEE Journal of Quantum Electronics 46 (6), 906-919, 2010
382010
Injection-avalanche-based n+ pn silicon complementary metal–oxide–semiconductor light-emitting device (450–750 nm) with 2-order-of-magnitude increase in light emission intensity
LW Snyman, M Du Plessis, H Aharoni
Japanese journal of Applied physics 46 (4S), 2474, 2007
382007
Si light-emitting device in integrated photonic CMOS ICs
K Xu, LW Snyman, H Aharoni
Optical Materials 69, 274-282, 2017
372017
Two-and multi-terminal CMOS/BiCMOS Si LED’s
M Du Plessis, H Aharoni, LW Snyman
Optical Materials 27 (5), 1059-1063, 2005
372005
Spatial and intensity modulation of light emission from silicon LED matrix
M Du Plessis, H Aharoni, LW Snyman
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic …, 2000
372000
Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC
Y Chen, D Xu, K Xu, N Zhang, S Liu, J Zhao, Q Luo, LW Snyman, ...
Chinese Physics B 28 (10), 107801, 2019
362019
Injection-avalanche based n+ pn Si CMOS LED’s (450nm. 750nm) with two order increase in light emission intensity-Applications for next generation silicon-based optoelectronics
LW Snyman, M Du Plessis, H Aharoni
Jpn. J. Appl. Physics 46 (4B), 2474-2480, 2007
342007
On the growth of Au on clean and contaminated GaAs (001) surfaces
JS Vermaak, LW Snyman, FD Auret
Journal of Crystal Growth 42, 132-135, 1977
341977
A dependency of quantum efficiency of silicon CMOS n/sup+/pp/sup+/LEDs on current density
LW Snyman, H Aharoni, M Du Plessis
IEEE Photonics Technology Letters 17 (10), 2041-2043, 2005
32*2005
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