| Smart GaN platform: performance & challenges CL Tsai, YH Wang, MH Kwan, PC Chen, FW Yao, SC Liu, JL Yu, CL Yeh, ... 2017 IEEE International Electron Devices Meeting (IEDM), 33.1. 1-33.1. 4, 2017 | 107 | 2017 |
| A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems KYR Wong, MH Kwan, FW Yao, MW Tsai, YS Lin, YC Chang, PC Chen, ... 2015 IEEE International Electron Devices Meeting (IEDM), 9.5. 1-9.5. 4, 2015 | 70 | 2015 |
| CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications MH Kwan, KY Wong, YS Lin, FW Yao, MW Tsai, YC Chang, PC Chen, ... 2014 IEEE International Electron Devices Meeting, 17.6. 1-17.6. 4, 2014 | 59 | 2014 |
| Semiconductor structure and method of forming the same PC Chen, JLJ Yu, YAO Fu-Wei, CW Hsu, FC Yang, CL Tsai US Patent 8,507,920, 2013 | 31 | 2013 |
| AlGaN/GaN MIS-HFET with improvement in high temperature gate bias stress-induced reliability KY Wong, YS Lin, CW Hsiung, GP Lansbergen, MC Lin, FW Yao, CJ Yu, ... 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 20 | 2014 |
| Transistor having metal diffusion barrier KY Wong, PC Chen, YU Chen-Ju, FC Yang, JLJ Yu, YAO Fu-Wei, RY Su, ... US Patent 9,443,969, 2016 | 17 | 2016 |
| Bootstrap MOS for high voltage applications JH Yeh, C Cheng, RY Su, KH Huo, PC Chen, FC Yang, CL Tsai US Patent 9,190,535, 2015 | 16 | 2015 |
| GaN cascode performance optimization for high efficient power applications HY Wu, MC Lin, NY Yang, CT Tsai, CB Wu, YS Lin, YC Chang, PC Chen, ... 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 15 | 2016 |
| Embedded JFETs for high voltage applications JH Yeh, C Cheng, RY Su, KH Huo, PC Chen, FC Yang, CL Tsai US Patent 8,704,279, 2014 | 15 | 2014 |
| High electron mobility transistor including an embedded flourine region KY Wong, YU Chen-Ju, YAO Fu-Wei, JLJ Yu, PC Chen, FC Yang US Patent 8,624,296, 2014 | 12 | 2014 |
| High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device K Murukesan, WC Chiang, CL Tsai, KH Huo, KM Wu, PC Chen, RY Su, ... US Patent 10,535,730, 2020 | 11 | 2020 |
| Plasma protection diode for a HEMT device KY Wong, CW Hsu, YU Chen-Ju, YAO Fu-Wei, JLJ Yu, FC Yang, ... US Patent 9,165,839, 2015 | 11 | 2015 |
| Method of forming a semiconductor structure PC Chen, JLJ Yu, YAO Fu-Wei, CW Hsu, FC Yang, CL Tsai US Patent 8,697,505, 2014 | 11 | 2014 |
| Rectifier structures with low leakage KY Wong, YU Chen-Ju, JLJ Yu, PC Chen, YAO Fu-Wei, FC Yang US Patent 9,111,956, 2015 | 9 | 2015 |
| Improved trap-related characteristics on SiNx/AlGaN/GaN MISHEMTs with surface treatment YS Lin, KY Wong, GP Lansbergen, JL Yu, CJ Yu, CW Hsiung, HC Chiu, ... 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 7 | 2014 |
| Embedded JFETs for high voltage applications JH Yeh, C Cheng, RY Su, KH Huo, PC Chen, FC Yang, CL Tsai US Patent 9,673,323, 2017 | 6 | 2017 |
| High electron mobility transistor CW Hsu, JLJ Yu, YAO Fu-Wei, YU Chen-Ju, PC Chen, KY Wong US Patent 8,963,162, 2015 | 6 | 2015 |
| High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device K Murukesan, WC Chiang, CL Tsai, KH Huo, KM Wu, PC Chen, RY Su, ... US Patent 11,145,713, 2021 | 3 | 2021 |
| Semiconductor structure, HEMT structure and method of forming the same YC Chang, PC Chen, JLJ Yu, CL Tsai US Patent 9,812,562, 2017 | 3 | 2017 |
| Method of forming a high electron mobility transistor CW Hsu, JLJ Yu, YAO Fu-Wei, YU Chen-Ju, PC Chen, KY Wong US Patent 9,419,093, 2016 | 3 | 2016 |
